Role of temperature dependence of optical properties in laser irradiation of biological tissue

1992 ◽  
Author(s):  
Sohi Rastegar ◽  
Beop-Min Kim ◽  
Steven L. Jacques
Keyword(s):  
Optical Properties ◽  
Temperature Dependence ◽  
Laser Irradiation ◽  
Biological Tissue

scholarly journals Role of the Anilinium Ion on the Selective Polymerization of Anilinium 2-Acrylamide-2-methyl-1-propanesulfonate

Polymers ◽  
2021 ◽  
Vol 13 (14) ◽  
pp. 2349
Author(s):  
Alain Salvador Conejo-Dávila ◽  
Marco Armando Moya-Quevedo ◽  
David Chávez-Flores ◽  
Alejandro Vega-Rios ◽  
Erasto Armando Zaragoza-Contreras
Keyword(s):  
Cyclic Voltammetry ◽  
Optical Properties ◽  
Thermal Properties ◽  
Free Radical ◽  
1H Nmr ◽  
Molecular Interactions ◽  
13C Nmr ◽  
Oxidative Polymerization ◽  
Cyclic Voltammetry Analysis

The development of anilinium 2-acrylamide-2-methyl-1-propanesulfonate (Ani-AMPS) monomer, confirmed by 1H NMR, 13C NMR, and FTIR, is systematically studied. Ani-AMPS contains two polymerizable functional groups, so it was submitted to selective polymerization either by free-radical or oxidative polymerization. Therefore, poly(anilinium 2-acrylamide-2-methyl-1-propanesulfonic) [Poly(Ani-AMPS)] and polyaniline doped with 2-acrylamide-2-methyl-1-propanesulfonic acid [PAni-AMPS] can be obtained. First, the acrylamide polymer, poly(Ani-AMPS), favored the π-stacking of the anilinium group produced by the inter- and intra-molecular interactions and was studied utilizing 1H NMR, 13C NMR, FTIR, and UV-Vis-NIR. Furthermore, poly(Ani-AMPS) fluorescence shows quenching in the presence of Fe2+ and Fe3+ in the emission spectrum at 347 nm. In contrast, the typical behavior of polyaniline is observed in the cyclic voltammetry analysis for PAni-AMPS. The optical properties also show a significant change at pH 4.4. The PAni-AMPS structure was corroborated through FTIR, while the thermal properties and morphology were analyzed utilizing TGA, DSC (except PAni-AMPS), and FESEM.

scholarly journals Effect of dopant concentration and the role of ZnS shell on optical properties of Sm3+ doped CdS quantum dots

RSC Advances ◽  
2021 ◽  
Vol 11 (14) ◽  
pp. 7961-7971
Author(s):  
N. D. Vinh ◽  
P. M. Tan ◽  
P. V. Do ◽  
S. Bharti ◽  
V. X. Hoa ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Dopant Concentration ◽  
Core Shell ◽  
Cds Quantum Dots ◽  
Cds Qds

The role of samarium (Sm) dopant on the structural, morphological, and optical properties of CdS QDs and CdS/ZnS core/shell QDs was methodically reported.

Role of non-magnetic dopants on the room temperature ferromagnetism and optical properties of BaSnO3 perovskite

2020 ◽  
Vol 281 ◽  
pp. 121028 ◽  
Author(s):  
Saad Mabrouk Yakout ◽  
Hanan A. Mousa ◽  
Hala T. Handal ◽  
Walid Sharmoukh
Keyword(s):  
Optical Properties ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism

Optical properties of GaSb(001)-c(2 × 6): The role of surface antisite defects

2010 ◽  
Vol 247 (8) ◽  
pp. 1960-1964 ◽  
Author(s):  
Conor Hogan ◽  
Rita Magri ◽  
Rodolfo Del Sole
Keyword(s):  
Optical Properties ◽  
Antisite Defects

Electrical and Optical Properties of Si+ and P+ Implanted InP:Fe

1990 ◽  
Vol 201 ◽  
Author(s):  
Honglie Shen ◽  
Genqing Yang ◽  
Zuyao Zhou ◽  
Guanqun Xia ◽  
Shichang Zou
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
Temperature Dependence ◽  
Optimal Condition ◽  
Room Temperature ◽  
Broad Band ◽  
Photoluminescence Spectra ◽  
Electrical And Optical Properties ◽  
Spectrum Measurement ◽  
Single Implant

AbstractDual implantations of Si+ and P+ into InP:Fe were performed both at 200°C and room temperature. Si+ ions were implanted by 150keV with doses ranging from 5×1013 /cm2 to 1×1015 /cm2, while P+ ions were implanted by 110keV. 160keV and 180keV with doses ranging from 1×l013 /cm2 to 1×1015 /cm2. Hall measurements and photoluminescence spectra were used to characterize the silicon nitride encapsulated annealed samples. It was found that enhanced activation can be obtained by Si+ and P+ dual implantations. The optimal condition for dual implantations is that the atomic distribution of implanted P overlaps that of implanted si with the same implant dose. For a dose of 5×l014 /cm2, the highest activation for dual implants is 70% while the activation for single implant is 40% after annealing at 750°C for 15 minutes. PL spectrum measurement was carried out at temperatures from 11K to 100K. A broad band at about 1.26eV was found in Si+ implanted samples, of which the intensity increased with increasing of the Si dose and decreased with increasing of the co-implant P+ dose. The temperature dependence of the broad band showed that it is a complex (Vp-Sip) related band. All these results indicate that silicon is an amphoteric species in InP.

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