Ultraviolet Laser Ablation of a Silicon Wafer

1988 ◽  
Vol 129 ◽  
Author(s):  
Masahiro Kawasaki ◽  
Hiroyasu Sato ◽  
Gen Inoue
Keyword(s):  
Theoretical Model ◽  
Laser Ablation ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Fluorescence Analysis ◽  
Laser Induced Fluorescence ◽  
Wafer Surface ◽  
Translational Energy ◽  
Si Wafer ◽  
Pulsed Laser Irradiation

Pulsed laser irradiation at 248 nm can ablate Si atoms from an Si wafer. The mechanism of this photoablation has been examined by laser-induced fluorescence analysis of the Si products. The Si atoms are measured to leave the wafer surface with averaged translational energy of 2.5 kcal/mol. The distribution of translational energy is well described by the theoretical model for non-cascade ablation processes.

Crystal Growth Modified by Pulsed Laser Irradiation on Growing Surface in Ba-Y-Cu-O Film Preparation by Laser Ablation

1992 ◽  
Vol 275 ◽  
Author(s):  
Akiharu Morimoto ◽  
Shigeru Mizukami ◽  
Tatsuo Shimizu ◽  
Toshiharu Mlnamikawa ◽  
Yasuto Yonezawa ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Laser Ablation ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Film Surface ◽  
Superconducting Films ◽  
Delay Times ◽  
Film Preparation ◽  
Arf Excimer Laser ◽  
Pulsed Laser Irradiation

ABSTRACTBa2YCu3Ox superconducting films were prepared by Nd:YAG laser ablation, equipped with a second (ArF excimer) laser for irradiation onto the growing film surface. The irradiation onto the film during the deposition were delayed for various delay times against the ablation of Ba2YCu3Ox target. The experiment showed that the second laser irradiation within several tens us around the ablation event induces a change of the crystal orientation. This result suggests that the crystal growth for the laser ablation is determined mainly around this time scale.

Modification of structural and transport properties in epitaxial YBa2CU3Ox films by pulsed laser irradiation

1993 ◽  
Vol 3 (12) ◽  
pp. 2173-2188
Author(s):  
N. G. Chechenin ◽  
A. V. Chernysh ◽  
V. V. Korneev ◽  
E. V. Monakhov ◽  
B. V. Seleznev
Keyword(s):  
Transport Properties ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Pulsed Laser Irradiation

PULSED LASER IRRADIATION OF NICKEL THIN FILMS ON SILICON

1983 ◽  
Vol 44 (C5) ◽  
pp. C5-449-C5-454 ◽  
Author(s):  
P. Baeri ◽  
M. G. Grimaldi ◽  
E. Rimini ◽  
G. Celotti
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Nickel Thin Films ◽  
Pulsed Laser Irradiation

FUNDAMENTALS OF PULSED LASER IRRADIATION OF SILICON

1983 ◽  
Vol 44 (C5) ◽  
pp. C5-23-C5-36 ◽  
Author(s):  
H. Kurz ◽  
L. A. Lompré ◽  
J. M. Liu
Keyword(s):  
Laser Irradiation ◽  
Pulsed Laser ◽  
Pulsed Laser Irradiation

Experimental evaluation of performance of concrete removal in pulsed laser irradiation

2016 ◽  
Author(s):  
Nguyen Phi Long ◽  
Hiroyuki Daido ◽  
Yukihiro Matsunaga ◽  
Tomonori Yamada ◽  
Akihiro Nishimura ◽  
...  
Keyword(s):  
Laser Irradiation ◽  
Experimental Evaluation ◽  
Pulsed Laser ◽  
Evaluation Of Performance ◽  
Pulsed Laser Irradiation

Surface modification of sintered magnesium oxide (MgO) with chromium oxide (Cr2O3) by pulsed laser irradiation in air and liquids

2021 ◽  
Author(s):  
Katia del Carmen Martínez Guzmán ◽  
Sadasivan Shaji ◽  
Tushar Kanti Das Roy ◽  
Bindu Krishnan ◽  
David Avellaneda Avellaneda ◽  
...  
Keyword(s):  
Surface Modification ◽  
Laser Irradiation ◽  
Magnesium Oxide ◽  
Chromium Oxide ◽  
Pulsed Laser ◽  
Pulsed Laser Irradiation
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