Self-assembled ultra-low-k porous silica films for 45-nm technology node

2005 ◽  
Author(s):  
Takamaro Kikkawa ◽  
Y. Oku ◽  
K. Kohmura ◽  
N. Fujii ◽  
H. Tanaka ◽  
...  
Keyword(s):  
Porous Silica ◽  
Silica Films ◽  
Technology Node ◽  
Self Assembled ◽  
Low K

Influence of Humidity on Electrical Characteristics of Self-Assembled Porous Silica Low-k Films

2005 ◽  
Vol 152 (7) ◽  
pp. G560 ◽  
Author(s):  
T. Kikkawa ◽  
S. Kuroki ◽  
S. Sakamoto ◽  
K. Kohmura ◽  
H. Tanaka ◽  
...  
Keyword(s):  
Porous Silica ◽  
Electrical Characteristics ◽  
Self Assembled ◽  
Low K

Preparation and Properties of Ultra Low K Porous Silica Films Modified by Trimethylchlorosilane (TMCS)

2010 ◽  
Vol 406 (1) ◽  
pp. 221-227 ◽  
Author(s):  
Zhao Fengguo ◽  
Wu Xiaoqing ◽  
Ren Wei ◽  
Chen Xiaofeng ◽  
Shi Peng ◽  
...  
Keyword(s):  
Porous Silica ◽  
Silica Films ◽  
Low K

Effect of Plasma Treatment and TMCTS Vapor Annealing on the Reinforcement of Porous low-k Films

2005 ◽  
Vol 863 ◽  
Author(s):  
Kazuo Kohmura ◽  
Hirofumi Tanaka ◽  
Shunsuke Oike ◽  
Masami Murakami ◽  
Tetsuo Ono ◽  
...  
Keyword(s):  
Mechanical Strength ◽  
Plasma Treatment ◽  
Polymer Network ◽  
Porous Silica ◽  
Argon Plasma ◽  
Silica Films ◽  
Oh Groups ◽  
Vapor Annealing ◽  
Silica Wall ◽  
Low K

AbstractA novel process of TMCTS vapor annealing combined with a plasma treatment has been developed for improving the mechanical strength of porous silica films having ultralow dielectric constant. When porous silica films annealed under 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS) vapor were treated with argon plasma and then re-treated with TMCTS vapor, the mechanical strength (i.e., elastic modulus, hardness) of the films increased significantly. Results of Fourier transform infrared spectroscopy (FT-IR) suggested an accelerative effect resulted from the plasma treatment on the conversion of Si-CH3 and Si-H groups to Si-OH groups. The latter group appears to react faster with TMCTS from the second annealing to form cross-linked polymer network on the porous silica wall surfaces. The resulting cross-linked network is thought to keep the low permittivity and enhance the mechanical strength of the low-k films.

Influence of Cu Electroplating Solution on Self-Assembled Porous Silica Low-k Films

2006 ◽  
Vol 153 (9) ◽  
pp. G870 ◽  
Author(s):  
Masashi Shimoyama ◽  
Ryotaro Yagi ◽  
Shinichi Chikaki ◽  
Nobutoshi Fujii ◽  
Takahiro Nakayama ◽  
...  
Keyword(s):  
Porous Silica ◽  
Cu Electroplating ◽  
Self Assembled ◽  
Low K

Skeletal Si–O–Si network connectivity of self-assembled porous silica for low-k dielectrics depending on organoalkoxysilane concentration in precursor solutions

2007 ◽  
Vol 101 (6) ◽  
pp. 064301 ◽  
Author(s):  
Syozo Takada ◽  
Nobuhiro Hata ◽  
Kikuko Hayamizu ◽  
Miwa Murakami ◽  
Kenzo Deguchi ◽  
...  
Keyword(s):  
Porous Silica ◽  
Network Connectivity ◽  
Self Assembled ◽  
Low K

Integration of Self-Assembled Porous Silica in Low-k/Cu Damascene Interconnects

2009 ◽  
Vol 48 (9) ◽  
pp. 095002 ◽  
Author(s):  
Shinichi Chikaki ◽  
Masashi Shimoyama ◽  
Ryotaro Yagi ◽  
Yoshinori Shishida ◽  
Takenobu Yoshino ◽  
...  
Keyword(s):  
Porous Silica ◽  
Self Assembled ◽  
Damascene Interconnects ◽  
Low K
Sign in / Sign up

Export Citation Format

Share Document