Electrical resistance variation in Se(10)Sb(10)Te(80) ternary semiconductor thin films

1992 ◽  
Author(s):  
V. D. Das ◽  
S. Aruna ◽  
K. S. Raju
Keyword(s):  
Thin Films ◽  
Electrical Resistance ◽  
Semiconductor Thin Films ◽  
Resistance Variation ◽  
Electrical Resistance Variation ◽  
Ternary Semiconductor

scholarly journals Electrical Resistance Variation of MWCNT/PMMA Composite for Gaseous Toluene Detection

2009 ◽  
Vol 42 (Supplement.) ◽  
pp. s238-s241 ◽  
Author(s):  
Amornwong Srisurichan ◽  
Adi Ilcham ◽  
Apinan Soottitantawat ◽  
Yongyuth Wanna ◽  
Noriaki Sano ◽  
...  
Keyword(s):  
Electrical Resistance ◽  
Resistance Variation ◽  
Electrical Resistance Variation ◽  
Gaseous Toluene

Laser Ablation of CuInSe2 and CuIn/GaSe2 Alloys for Solar Cell Applications

1992 ◽  
Vol 285 ◽  
Author(s):  
Arthur E. hill ◽  
Seppo Leppåvuori ◽  
Robert D. Tomlinson ◽  
Richard D. Pilkington ◽  
Juhani Levoska ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Laser Ablation ◽  
Source Material ◽  
Full Potential ◽  
Semiconductor Thin Films ◽  
Copper Indium ◽  
Physical Deposition ◽  
Ternary Semiconductor ◽  
High Absorption Coefficient

ABSTRACTCopper indium diselenide (CIS) is one of the most promising materials proposed for use in the next generation of solar cells. A successful technique to deposit thin films of this material, which would maximise the advantage offered by its exceptionally high absorption coefficient and radiation resistance, has proved to be elusive. Dissociation of the source material during the physical deposition of these thin films has forced commercial production to adopt a binary (Cu/In) deposition route with a subsequent selenisation stage. This has proved to be a major difficulty; selenisation has introduced its own problems of non-uniformity and toxicity. Laser ablation is especially suited to the deposition of multi-component films in that the initial composition is conserved.Single crystal and polycrystalline targets of CIS were laser ablated using an XeCl excimer laser. The films were analysed using EDAX, XRD, RBS and Raman spectroscopy. Results from EDAX and RBS measurements indicated that the composition of the source material had largely been maintained in the films. This suggests that laser ablation could prove to be a significant technique in the preparation of complex ternary semiconductor thin films for solar cell applications which would allow the full potential of these materials to be realised in device production.

Cadmium indium selenide semiconducting nanofibers by single step electrochemical route

2015 ◽  
Vol 29 (06n07) ◽  
pp. 1540024 ◽  
Author(s):  
B. G. Wagh ◽  
Anuradha B. Bhalerao ◽  
R. N. Bulakhe ◽  
C. D. Lokhande
Keyword(s):  
Thin Films ◽  
Selenium Dioxide ◽  
Indium Selenide ◽  
Single Step ◽  
Photoelectrochemical Cell ◽  
X Ray Diffraction ◽  
X Ray ◽  
Semiconductor Thin Films ◽  
Ternary Semiconductor ◽  
Cadmium Indium

The growth of ternary semiconductor thin films of cadmium indium selenide nanofibers has been carried out from aqueous solution of cadmium sulphate, indium trichloride, and selenium dioxide by electrochemical route. These thin films have been further optimized using photoelectrochemical cell (PEC). Optimized thin film has been characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM).

scholarly journals Large Electrical Resistance Variation at Low Temperature in Transition Metal-Doped Ge Single Crystals

2015 ◽  
Vol 56 (9) ◽  
pp. 1362-1364 ◽  
Author(s):  
Jiyoun Choi ◽  
Jeongyong Choi ◽  
Sungyoul Choi ◽  
Jongphil Kim ◽  
Sunglae Cho
Keyword(s):  
Low Temperature ◽  
Transition Metal ◽  
Single Crystals ◽  
Electrical Resistance ◽  
Resistance Variation ◽  
Electrical Resistance Variation ◽  
Metal Doped

Thin Film Microcircuit Preparation in a Diamond Anvil Cell

2013 ◽  
Vol 690-693 ◽  
pp. 499-502
Author(s):  
Jia Wang ◽  
Bao Jia Wu
Keyword(s):  
Thin Film ◽  
Electrical Resistance ◽  
Diamond Anvil Cell ◽  
Protective Layer ◽  
Molybdenum Metal ◽  
Reversible Phase Transition ◽  
Resistance Variation ◽  
Electrical Resistance Variation ◽  
Diamond Anvil ◽  
Reversible Phase

An effective and convenient method about molybdenum metal thin film microcircuit was developed on diamond anvil cell(DAC) under high pressure. Alumina film was used as the protective layer and sputtered on DAC. By using this method, we studied the electrical resistance variation about nanoparticles ZnS power up to 36GPa. The reversible phase transition had been reflected clearly by the electrical resistance measurements with sample.

Electrical resistance variation of carbon-nanotube networks due to surface modification of glass substrate

2010 ◽  
Vol 207 (8) ◽  
pp. 1912-1917
Author(s):  
Eui Yun Jang ◽  
Dong Kyun Seo ◽  
Seoho Jung ◽  
Taewoo Kim ◽  
Tae June Kang ◽  
...  
Keyword(s):  
Surface Modification ◽  
Carbon Nanotube ◽  
Glass Substrate ◽  
Electrical Resistance ◽  
Resistance Variation ◽  
Electrical Resistance Variation ◽  
Carbon Nanotube Networks
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