Laser Ablation of CuInSe2 and CuIn/GaSe2 Alloys for Solar Cell Applications

1992 ◽  
Vol 285 ◽  
Author(s):  
Arthur E. hill ◽  
Seppo Leppåvuori ◽  
Robert D. Tomlinson ◽  
Richard D. Pilkington ◽  
Juhani Levoska ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Laser Ablation ◽  
Source Material ◽  
Full Potential ◽  
Semiconductor Thin Films ◽  
Copper Indium ◽  
Physical Deposition ◽  
Ternary Semiconductor ◽  
High Absorption Coefficient

ABSTRACTCopper indium diselenide (CIS) is one of the most promising materials proposed for use in the next generation of solar cells. A successful technique to deposit thin films of this material, which would maximise the advantage offered by its exceptionally high absorption coefficient and radiation resistance, has proved to be elusive. Dissociation of the source material during the physical deposition of these thin films has forced commercial production to adopt a binary (Cu/In) deposition route with a subsequent selenisation stage. This has proved to be a major difficulty; selenisation has introduced its own problems of non-uniformity and toxicity. Laser ablation is especially suited to the deposition of multi-component films in that the initial composition is conserved.Single crystal and polycrystalline targets of CIS were laser ablated using an XeCl excimer laser. The films were analysed using EDAX, XRD, RBS and Raman spectroscopy. Results from EDAX and RBS measurements indicated that the composition of the source material had largely been maintained in the films. This suggests that laser ablation could prove to be a significant technique in the preparation of complex ternary semiconductor thin films for solar cell applications which would allow the full potential of these materials to be realised in device production.

Cadmium indium selenide semiconducting nanofibers by single step electrochemical route

2015 ◽  
Vol 29 (06n07) ◽  
pp. 1540024 ◽  
Author(s):  
B. G. Wagh ◽  
Anuradha B. Bhalerao ◽  
R. N. Bulakhe ◽  
C. D. Lokhande
Keyword(s):  
Thin Films ◽  
Selenium Dioxide ◽  
Indium Selenide ◽  
Single Step ◽  
Photoelectrochemical Cell ◽  
X Ray Diffraction ◽  
X Ray ◽  
Semiconductor Thin Films ◽  
Ternary Semiconductor ◽  
Cadmium Indium

The growth of ternary semiconductor thin films of cadmium indium selenide nanofibers has been carried out from aqueous solution of cadmium sulphate, indium trichloride, and selenium dioxide by electrochemical route. These thin films have been further optimized using photoelectrochemical cell (PEC). Optimized thin film has been characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM).

Multi Band Gap Cu(In,Ga)(S,Se)2 Thin Films Deposited by Spray Pyrolysis for High Performance Solar Cell Devices

2016 ◽  
Vol 864 ◽  
pp. 143-148
Author(s):  
Muhammad Aamir Hassan ◽  
Muhammad Mujahid ◽  
Lydia Helena Wong
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Band Gap ◽  
Spray Pyrolysis ◽  
High Performance ◽  
Cadmium Sulphide ◽  
Indium Chloride ◽  
Copper Indium ◽  
Absorbing Layer ◽  
Multi Band

The performance of copper indium gallium disulfoselenide (CIGSSe) solar cells strongly depends on the band bap of absorbing layer of CIGSSe. The device performance can be improved by fabricating multi band gap layer of CIGSSe. However, the fabrication of multi band gap CIGSSe using non-vacuum techniques is challenging. In this study, we fabricated solar cell devices which consisted of multi band gap Cu (In,Ga)(S,Se)2 thin films. The CIGS thin films were prepared by the spray-pyrolysis of aqueous precursor solutions of gallium (gallium chloride; GaCl3), copper (indium chloride; CuCl2), indium (indium chloride; InCl3), and Sulphur (thiourea; (SC(NH2)2) sources on Mo-coated glass substrate. The as-sprayed thin films were then selenized at 500 °C for 10 minutes.After selenization, CIGS films were transformed to Cu (In,Ga)(S,Se)2 (CIGSSe). The CIGS films with different composition were deposited again on top of selenized CIGSSe films and selenization process was repeated, hence multi band gap CIGSSe films were fabricated. The Chemical bath deposition (CBD) process was used to deposit cadmium sulphide (CdS) buffer layer. The solar cell fabricated with the device configuration of glass/Mo/CIGSSe/CdS/i-ZnO/AZO showed a power conversion efficiency of 6.51%.

Novel ‘Photochemical deposition’ and conventional ‘Electrochemical deposition’ of CdS and HgxCd1−xTe thin films and their characterization for solar cell device applications

2001 ◽  
Vol 668 ◽  
Author(s):  
R. Kumaresan ◽  
M. Ichimura ◽  
S.Moorthy Babu ◽  
P. Ramasamy
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Electrochemical Deposition ◽  
Device Fabrication ◽  
Deposition Technique ◽  
Solar Cell Device ◽  
Semiconductor Thin Films ◽  
Photochemical Deposition ◽  
Cds Thin Films ◽  
Device Applications

ABSTRACTSolar cell devices of the structures CdS/CdTe and CdS/HgCdTe, based on II-VI semiconductor thin films have been fabricated and analyzed. CdS thin films were deposited by the recently established novel deposition technique, namely, 'Photochemical deposition' and the Cd rich HgxCd1−xTe films used for the device fabrication were deposited by the conventional ‘electrochemical deposition’ technique. First solar cell devices of the structures CdS/CdTe and CdS/HgCdTe using photochemically deposited CdS films, were fabricated and analyzed for the conversion efficiency.

Selenization of electrodeposited copper–indium alloy thin films for solar cell applications

2014 ◽  
Vol 25 (10) ◽  
pp. 4643-4649 ◽  
Author(s):  
Priyanka U. Londhe ◽  
Ashwini B. Rohom ◽  
Nandu B. Chaure
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Copper Indium

scholarly journals First-Principles Calculation of Optoelectronic Properties of Antimony Sulfides Thin Film

2019 ◽  
pp. 1-10
Author(s):  
A. B. Suleiman ◽  
A. S. Gidado ◽  
Abdullahi Lawal
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Solar Cell ◽  
First Principles ◽  
Density Functional ◽  
First Principles Calculation ◽  
Full Potential ◽  
Absorbing Layer ◽  
Optical Behavior

Antimony sulfide (Sb2S3) thin film have received great interests as an absorbing layer for solar cell technology. Electronic and optical properties of Sb2S3 thin films were studied by first principles approach. Highly accurate full-potential linearized augmented plane wave (FP-LAPW) method within density functional theory (DFT) as implemented in WIEN2k package. The simulated film is in the [001] direction using supercell method with a vacuum along z-direction so that slab and periodic images can be treated independently. The calculated values of indirect band gaps of Sb2S3 for various slabs were found to be 0.568, 0.596 and 0.609 eV for 1, 2 and 4 slabs respectively. This trend is consistent with the experimental work where the band gap reduced when the thickness increased. Optical properties comprising of real and imaginary parts of complex dielectric function, absorption coefficient, refractive index was also investigated to understand the optical behavior of Sb2S3 thin films. From analysis of optical properties, it is clearly shown that Sb2S3 thin films have good optical absorption in the visible light and ultraviolet wavelengths, it is anticipated that these films can be used as an absorbing layer for solar cell and optoelectronic devices.

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