Controlled Deposition of Silver Indium Sulfide Ternary Semiconductor Thin Films by Chemical Bath Deposition

2008 ◽  
Vol 20 (13) ◽  
pp. 4475-4483 ◽  
Author(s):  
Li-Hau Lin ◽  
Ching-Chen Wu ◽  
Chia-Hung Lai ◽  
Tai-Chou Lee
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Indium Sulfide ◽  
Semiconductor Thin Films ◽  
Ternary Semiconductor ◽  
Controlled Deposition

Laser Ablation of CuInSe2 and CuIn/GaSe2 Alloys for Solar Cell Applications

1992 ◽  
Vol 285 ◽  
Author(s):  
Arthur E. hill ◽  
Seppo Leppåvuori ◽  
Robert D. Tomlinson ◽  
Richard D. Pilkington ◽  
Juhani Levoska ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Laser Ablation ◽  
Source Material ◽  
Full Potential ◽  
Semiconductor Thin Films ◽  
Copper Indium ◽  
Physical Deposition ◽  
Ternary Semiconductor ◽  
High Absorption Coefficient

ABSTRACTCopper indium diselenide (CIS) is one of the most promising materials proposed for use in the next generation of solar cells. A successful technique to deposit thin films of this material, which would maximise the advantage offered by its exceptionally high absorption coefficient and radiation resistance, has proved to be elusive. Dissociation of the source material during the physical deposition of these thin films has forced commercial production to adopt a binary (Cu/In) deposition route with a subsequent selenisation stage. This has proved to be a major difficulty; selenisation has introduced its own problems of non-uniformity and toxicity. Laser ablation is especially suited to the deposition of multi-component films in that the initial composition is conserved.Single crystal and polycrystalline targets of CIS were laser ablated using an XeCl excimer laser. The films were analysed using EDAX, XRD, RBS and Raman spectroscopy. Results from EDAX and RBS measurements indicated that the composition of the source material had largely been maintained in the films. This suggests that laser ablation could prove to be a significant technique in the preparation of complex ternary semiconductor thin films for solar cell applications which would allow the full potential of these materials to be realised in device production.

Cadmium indium selenide semiconducting nanofibers by single step electrochemical route

2015 ◽  
Vol 29 (06n07) ◽  
pp. 1540024 ◽  
Author(s):  
B. G. Wagh ◽  
Anuradha B. Bhalerao ◽  
R. N. Bulakhe ◽  
C. D. Lokhande
Keyword(s):  
Thin Films ◽  
Selenium Dioxide ◽  
Indium Selenide ◽  
Single Step ◽  
Photoelectrochemical Cell ◽  
X Ray Diffraction ◽  
X Ray ◽  
Semiconductor Thin Films ◽  
Ternary Semiconductor ◽  
Cadmium Indium

The growth of ternary semiconductor thin films of cadmium indium selenide nanofibers has been carried out from aqueous solution of cadmium sulphate, indium trichloride, and selenium dioxide by electrochemical route. These thin films have been further optimized using photoelectrochemical cell (PEC). Optimized thin film has been characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM).

Substrate spacing and thin-film yield in chemical bath deposition of semiconductor thin films

2000 ◽  
Vol 15 (11) ◽  
pp. 1022-1029 ◽  
Author(s):  
A Arias-Carbajal Reádigos ◽  
V M García ◽  
O Gomezdaza ◽  
J Campos ◽  
M T S Nair ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Bath Deposition ◽  
Semiconductor Thin Films

Characterization and Application of Semiconductor Thin Films Deposited by Chemical Bath Deposition

2004 ◽  
Vol 10 (S02) ◽  
pp. 610-611 ◽  
Author(s):  
Chih-hung Chang ◽  
Yu-Jen Chang ◽  
Doo-Hyoung Lee ◽  
Si-Ok Ryu ◽  
Tae-Jin Lee
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Semiconductor Thin Films

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

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