Investigation of influence of low-energy ion beam parameters on Reactive Ion Beam Synthesis (RIBS) of thin films

2004 ◽  
Author(s):  
Yuri P. Maishev ◽  
S. L. Shevchuk
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Low Energy ◽  
Ion Beam Synthesis ◽  
Beam Parameters

Effects of the low energy-ion beam assistance in the properties of TiCxNy thin films

2002 ◽  
Vol 151-152 ◽  
pp. 189-193 ◽  
Author(s):  
G.G. Fuentes ◽  
D. Cáceres ◽  
I. Vergara ◽  
E. Elizalde ◽  
J.M. Sanz
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Low Energy

Low-energy Ar+-ion beam induced endotaxial plasmonic Ag nanoparticles in PEDOT:PSS thin-films

2021 ◽  
pp. 130984
Author(s):  
Amardeep Bharti ◽  
Richa Bhardwaj ◽  
Kanika Upadhyay ◽  
Harkawal Singh ◽  
Asokan Kandasami ◽  
...  
Keyword(s):  
Thin Films ◽  
Ag Nanoparticles ◽  
Ion Beam ◽  
Low Energy

Dynamics of Microstructure in the Early Stages of Ion Beam Assisted Film Growth

1991 ◽  
Vol 237 ◽  
Author(s):  
Harry A. Atwater ◽  
C. J. Tsai ◽  
S. Nikzad ◽  
M.V.R. Murty
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Recent Progress ◽  
Film Growth ◽  
Ion Beam ◽  
Surface Interactions ◽  
Low Energy ◽  
Early Stages ◽  
Semiconductor Thin Films ◽  
Nucleation Mechanisms

ABSTRACTRecent progress in low energy ion-surface interactions, and the early stages of ion-assisted epitaxy of semiconductor thin films is described. Advances in three areas are discussed: dynamics of displacements and defect incorporation, nucleation mechanisms, and the use of ion bombardment to modify epitaxial growth kinetics in atrulysurface-selective manner.

scholarly journals Sputtering of silicon nanopowders by an argon cluster ion beam

2019 ◽  
Vol 10 ◽  
pp. 135-143 ◽  
Author(s):  
Xiaomei Zeng ◽  
Vasiliy Pelenovich ◽  
Zhenguo Wang ◽  
Wenbin Zuo ◽  
Sergey Belykh ◽  
...  
Keyword(s):  
Energy Dependence ◽  
Ion Beam ◽  
Finite Size ◽  
Low Energy ◽  
Finite Size Effect ◽  
Target Density ◽  
Cluster Ion ◽  
Sputtering Yield ◽  
Beam Parameters ◽  
Silicon Nanopowders

In this work an Ar+ cluster ion beam with energy in the range of 10–70 keV and dose of 7.2 × 1014–2.3 × 1016 cluster/cm2 was used to irradiate pressed Si nanopowder targets consisting of particles with a mean diameter of 60 nm. The influence of the target density and the cluster ion beam parameters (energy and dose) on the sputtering depth and sputtering yield was studied. The sputtering yield was found to decrease with increasing dose and target density. The energy dependence demonstrated an unusual non-monotonic behavior. At 17.3 keV a maximum of the sputtering yield was observed, which was more than forty times higher than that of the bulk Si. The surface roughness at low energy demonstrates a similar energy dependence with a maximum near 17 keV. The dose and energy dependence of the sputtering yield was explained by the competition of the finite size effect and the effect of debris formation.

Smoothing of polycrystalline Cu(In,Ga)(Se,S)2 thin films by low-energy ion-beam etching

1999 ◽  
Vol 17 (3) ◽  
pp. 793-798 ◽  
Author(s):  
F. Frost ◽  
G. Lippold ◽  
K. Otte ◽  
D. Hirsch ◽  
A. Schindler ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Low Energy ◽  
Ion Beam Etching

Low-energy ion beam-assisted deposition of giant magnetoresistive thin films

1996 ◽  
Vol 79 (8) ◽  
pp. 4939
Author(s):  
S. J. Guilfoyle ◽  
R. J. Pollard ◽  
P. J. Grundy
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Low Energy ◽  
Ion Beam Assisted Deposition

Fabrication of Epitaxial Silicides thin films by Combining Low-Energy Ion Beam Deposition and Silicon Molecular Beam Epitaxy

1995 ◽  
Vol 402 ◽  
Author(s):  
H. Shibatal ◽  
Y. Makital ◽  
H. Katsumata ◽  
S. Kimura ◽  
N. Kobayashil ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Knudsen Cell ◽  
Ion Beam Deposition ◽  
Deposited Films ◽  
Beam Deposition

AbstractWe have developed successfully the combined ion beam and molecular beam epitaxy (CIBMBE) system with a newly designed Knudsen cell for Si effusion. The CIBMBE system was applied to the epitaxial growth of Sil., Cx alloy thin films on Si using low-energy ( 100 – 300 eV ) C+ ion beam. Preliminary results on the characterization of the deposited films suggest high potential and reliability of the new Knudsen cell for Si effusion, as well as high ability of the CIBMBE method to produce thermally non-equilibrium materials. In addition, they indicate that the value of x decreases with increasing IC, which suggests that the selective sputtering for deposited C atoms by incident C+ ion beams takes place during CIBMBE processing. Precipitates of β-SiC were also found to be formed in the deposited films, whose amount was observed to increase with increasing IC.

scholarly journals Nanostructures of ITO Thin Films Induced by Low Energy Ion Beam

2016 ◽  
Vol 67 ◽  
pp. 02008
Author(s):  
Haifeng Wu ◽  
Xiangdong Jiang ◽  
Yixiong Zeng ◽  
Jimin Wang
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Low Energy ◽  
Ito Thin Films
Sign in / Sign up

Export Citation Format

Share Document