High-performance circuit design for the RET-enabled 65-nm technology node

Quantum-dot cellular automata (QCA) is one of the promising technologies that enable nanoscale circuit design with high performance and low-power consumption features. As memory cell and flip-flops are rudimentary for most of the digital circuits, having a high speed, and a less complex memory cell is significantly important. This paper presents novel architecture of D flip-flops and memory cell using a recently proposed five-input majority gate in QCA technology and simulated by QCADesigner tool version 2.0.3. The simulation results show that the proposed D flip-flops and the memory cell are more superior to the existing designs by considering the common design parameters. The proposed RAM cell spreads over an area of 0.12[Formula: see text][Formula: see text]m2and delay of 1.5 clock cycles. The proposed level-triggered, positive/negative edge-triggered, and dual edge-triggered D flip-flop uses 14%, 33%, and 21% less area, whereas the latency is 40%, 27%, and 25% less when compared to the previous best design. In addition, all the proposed designs are implemented in a single layer QCA and do not require any single or multilayer wire crossing.

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A High Performance LSI Circuit Design Strategy

10.1109/esscirc.1976.5469096 ◽

1976 ◽

Author(s):

S. Hollock

Keyword(s):

Circuit Design ◽

High Performance ◽

Design Strategy

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Influence of Lithography Distortion due to Metal Fill on CA

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.900.651 ◽

2014 ◽

Vol 900 ◽

pp. 651-655

Author(s):

Xiao Ming Chen ◽

Ke Qin Wang ◽

Song Song Li

Keyword(s):

Circuit Design ◽

Integrated Circuit ◽

Chemical Mechanical Polishing ◽

Mechanical Polishing ◽

Critical Area ◽

Integrated Circuit Design ◽

Technology Node ◽

Design And Manufacturing ◽

The Future

In the process of integrated circuit design and manufacturing, dummy metal fill can improve the planarity of layout after Chemical Mechanical Polishing (CMP). However, it will also cause lithography distortion and Critical Area (CA) variation. This paper compares and analyzes the influences of lithography distortion due to metal fill on CA from the perspectives of different defect particles based on 45nm technology node. The results indicate that dummy metal fill can increase open CA after lithography and the defect particle with the diameter of 0.066um leads to the largest increment percentage of open CA, which will take up almost 10%. This paper is instructive in researching dummy metal fill and CA or related fields in the future.

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