Material origins of line-edge roughness: Monte Carlo simulations and scaling analysis

Mapping Intimacies ◽

10.1117/12.535202 ◽

2004 ◽

Cited By ~ 1

Author(s):

George P. Patsis ◽

Vassilios Constantoudis ◽

Evangelos Gogolides

Keyword(s):

Monte Carlo ◽

Monte Carlo Simulations ◽

Scaling Analysis ◽

Line Edge Roughness ◽

Edge Roughness

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Effects of photoresist polymer molecular weight on line-edge roughness and its metrology probed with Monte Carlo simulations

Microelectronic Engineering ◽

10.1016/j.mee.2004.06.005 ◽

2004 ◽

Vol 75 (3) ◽

pp. 297-308 ◽

Cited By ~ 38

Author(s):

G.P. Patsis ◽

V. Constantoudis ◽

E. Gogolides

Keyword(s):

Molecular Weight ◽

Monte Carlo ◽

Monte Carlo Simulations ◽

Line Edge Roughness ◽

Polymer Molecular Weight ◽

Edge Roughness ◽

On Line

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Mesoscale kinetic Monte Carlo simulations of molecular resists: effects of photoacid homogeneity on resolution, line-edge roughness, and sensitivity

Journal of Micro/Nanolithography MEMS and MOEMS ◽

10.1117/1.3358383 ◽

2010 ◽

Vol 9 (1) ◽

pp. 013016 ◽

Cited By ~ 5

Author(s):

Richard A. Lawson

Keyword(s):

Monte Carlo ◽

Monte Carlo Simulations ◽

Kinetic Monte Carlo ◽

Line Edge Roughness ◽

Edge Roughness ◽

Kinetic Monte Carlo Simulations

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Effects of model polymer chain architectures of photo-resists on line-edge-roughness: Monte Carlo simulations

Journal of Physics Conference Series ◽

10.1088/1742-6596/10/1/095 ◽

2005 ◽

Vol 10 ◽

pp. 389-392 ◽

Cited By ~ 5

Author(s):

G P Patsis ◽

E Gogolides

Keyword(s):

Monte Carlo ◽

Monte Carlo Simulations ◽

Polymer Chain ◽

Line Edge Roughness ◽

Edge Roughness ◽

On Line

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Relationship between Resolution, Line Edge Roughness, and Sensitivity in Chemically Amplified Resist of Post-Optical Lithography Revealed by Monte Carlo and Dissolution Simulations

Applied Physics Express ◽

10.1143/apex.2.075006 ◽

2009 ◽

Vol 2 ◽

pp. 075006 ◽

Cited By ~ 5

Author(s):

Akinori Saeki ◽

Takahiro Kozawa ◽

Seiichi Tagawa

Keyword(s):

Monte Carlo ◽

Optical Lithography ◽

Line Edge Roughness ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resist

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Relationship between Stochastic Effect and Line Edge Roughness in Chemically Amplified Resists for Extreme Ultraviolet Lithography Studied by Monte Carlo Simulation

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.086504 ◽

2012 ◽

Vol 51 (8R) ◽

pp. 086504 ◽

Cited By ~ 25

Author(s):

Takahiro Kozawa

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Line Edge Roughness ◽

Ultraviolet Lithography ◽

Stochastic Effect ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resists

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Relationship between Stochastic Effect and Line Edge Roughness in Chemically Amplified Resists for Extreme Ultraviolet Lithography Studied by Monte Carlo Simulation

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.086504 ◽

2012 ◽

Vol 51 ◽

pp. 086504 ◽

Cited By ~ 10

Author(s):

Takahiro Kozawa

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Line Edge Roughness ◽

Ultraviolet Lithography ◽

Stochastic Effect ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resists

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Monte Carlo Simulation Study: the effects of double-patterning versus single-patterning on the line-edge-roughness (LER) in FDSOI Tri-gate MOSFETs

JSTS Journal of Semiconductor Technology and Science ◽

10.5573/jsts.2013.13.5.511 ◽

2013 ◽

Vol 13 (5) ◽

pp. 511-515 ◽

Cited By ~ 3

Author(s):

In Jun Park ◽

Changhwan Shin

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Simulation Study ◽

Line Edge Roughness ◽

Monte Carlo Simulation Study ◽

Edge Roughness ◽

Double Patterning

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Monte Carlo simulation of gel formation and surface and line-edge roughness in negative tone chemically amplified resists

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1542616 ◽

2003 ◽

Vol 21 (1) ◽

pp. 254 ◽

Cited By ~ 4

Author(s):

G. P. Patsis ◽

N. Glezos ◽

E. Gogolides

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Gel Formation ◽

Line Edge Roughness ◽

Chemically Amplified ◽

Edge Roughness ◽

Negative Tone ◽

Chemically Amplified Resists

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Line edge roughness after development in a positive-tone chemically amplified resist of post-optical lithography investigated by Monte Carlo simulation and a dissolution model

Nanotechnology ◽

10.1088/0957-4484/19/01/015705 ◽

2007 ◽

Vol 19 (1) ◽

pp. 015705 ◽

Cited By ~ 13

Author(s):

Akinori Saeki ◽

Takahiro Kozawa ◽

Seiichi Tagawa ◽

Heidi B Cao ◽

Hai Deng ◽

...

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Optical Lithography ◽

Line Edge Roughness ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resist ◽

Dissolution Model

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Origin of frequency-dependent line edge roughness: Monte Carlo and fast Fourier-transform studies

Applied Physics Letters ◽

10.1063/1.3225149 ◽

2009 ◽

Vol 95 (10) ◽

pp. 103106 ◽

Cited By ~ 1

Author(s):

Akinori Saeki ◽

Takahiro Kozawa ◽

Seiichi Tagawa

Keyword(s):

Monte Carlo ◽

Fourier Transform ◽

Fast Fourier Transform ◽

Line Edge Roughness ◽

Frequency Dependent ◽

Edge Roughness

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