High-speed InGaAs thin film MSM photodetector characterization using a fiber-based electro-optic sampling system

2004 ◽  
Author(s):  
Sang-Woo Seo ◽  
Sang-Yeon Cho ◽  
Sa Huang ◽  
April Brown ◽  
Nan M. Jokerst
Keyword(s):  
Thin Film ◽  
High Speed ◽  
Sampling System ◽  
Electro Optic ◽  
Msm Photodetector

Pulse response tuning of high speed InGaAs thin film MSM photodetector using external RCL loads

2005 ◽  
Author(s):  
Sang-Woo Seo ◽  
Sang-Yeon Cho ◽  
Sa Huang ◽  
Nan M. Jokerst ◽  
April S. Brown
Keyword(s):  
Thin Film ◽  
High Speed ◽  
Pulse Response ◽  
Msm Photodetector

High-speed travelling-wave BaTiO3 thin-film electro-optic modulators

2005 ◽  
Vol 41 (23) ◽  
pp. 1296 ◽  
Author(s):  
P. Tang ◽  
A.L. Meier ◽  
D.J. Towner ◽  
B.W. Wessels
Keyword(s):  
Thin Film ◽  
High Speed ◽  
Travelling Wave ◽  
Electro Optic ◽  
Batio3 Thin Film

Low voltage, high speed electro-optic scanner and switch in thin film lithium niobate

2012 ◽  
Author(s):  
James E. Toney ◽  
Michael Shnider ◽  
Neil Smith ◽  
Peter Pontius ◽  
James Busch ◽  
...  
Keyword(s):  
Thin Film ◽  
Lithium Niobate ◽  
High Speed ◽  
Low Voltage ◽  
Electro Optic

scholarly journals Heterogeneously Integrated Photonic Chip on Lithium Niobate Thin-Film Waveguide

Crystals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1376
Author(s):  
Xing Wei ◽  
Samuel Kesse
Keyword(s):  
Thin Film ◽  
Quantum Dots ◽  
Lithium Niobate ◽  
High Speed ◽  
Single Photon ◽  
Photon Flux ◽  
Speed Modulation ◽  
Electro Optic ◽  
Quantum Photonics ◽  
High Speed Modulation

Lithium niobate thin film represents as an ideal material substrate for quantum photonics due to its strong electro-optic effect and high-speed modulation capability. Here, we propose a novel platform which heterogeneously integrates single self-assembled InAs/GaAs quantum dots for a single-photon source on a lithium niobate photonic chip. The InAs/GaAs quantum dots can be transferred to the lithium niobate waveguide via a substrate transfer procedure with nanometer precision and be integrated through van der Waals force. A down-tapered structure is designed and optimized to deliver the photon flux generated from the InAs quantum dots embedded in a GaAs waveguide to the lithium niobate waveguide with an overall efficiency of 42%. In addition, the electro-optical effect is used to tune, and therefore to tune the beam splitting ratio of the integrated lithium niobate directional coupler, which can simultaneously route multiple photons to different spatial modes, and subsequently fan out through grating couplers to achieve single-photon sub-multiplexing. The proposed device opens up novel opportunities for achieving multifunctional hybrid integrated photonic chips.

scholarly journals Photonic integration based on a ferroelectric thin-film platform

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Shunsuke Abe ◽  
Tomoki Joichi ◽  
Kouichiro Uekusa ◽  
Hideo Hara ◽  
Shin Masuda
Keyword(s):  
Thin Film ◽  
Lead Zirconate Titanate ◽  
High Speed ◽  
Sol Gel ◽  
Ferroelectric Thin Film ◽  
Ferroelectric Materials ◽  
Propagation Loss ◽  
Optical Modulator ◽  
Photonic Integration ◽  
Electro Optic

Abstract Photonic-integrated circuits (PICs) using ferroelectric materials are expected to be used in many applications because of its unique optical properties such as large electro-optic coefficients. In this study, a novel PIC based on a ferroelectric thin-film platform was designed and fabricated, where high-speed optical modulator, spot-size converters (SSCs), and a variable optical attenuator (VOA) were successfully integrated. A ferroelectric lanthanum-modified lead zirconate titanate (PLZT) thin film was epitaxially-grown by using a modified sol-gel method, and it exhibits large electro-optic coefficients (>120 pm/V) and low propagation loss (1.1 dB/cm). The optical modulator, a Mach-Zehnder type, exhibited a half-wave voltage (Vπ) of 6.0 V (VπL = 4.5 Vcm) and optical modulation up to 56 Gb/s. Also, the VOA (with attenuation range of more than 26 dB) was successfully integrated with the modulator. As a result, it is concluded that the developed ferroelectric platform can pave the way for photonic integration.

High-speed electro-optic switch using buried electrode structure in polymer Mach–Zehnder waveguide

2016 ◽  
Vol 30 (06) ◽  
pp. 1650063 ◽  
Author(s):  
Jingwen Sun ◽  
Jian Sun ◽  
Yunji Yi ◽  
Lucheng Qv ◽  
Shiqi Sun ◽  
...  
Keyword(s):  
Insertion Loss ◽  
Rise Time ◽  
High Speed ◽  
Low Cost ◽  
Characteristic Parameters ◽  
Electrode Structure ◽  
Processing Cost ◽  
Electro Optic ◽  
Disperse Red 1 ◽  
Excellent Photostability

A low-cost and high-speed electro-optic (EO) switch using the guest–host EO material Disperse Red 1/Polymethyl Methacrylate (DR1/PMMA) was designed and fabricated. The DR1/PMMA material presented a low processing cost, an excellent photostability and a large EO coefficient of 13.1 pm/V. To improve the performance of the switch, the in-plane buried electrode structure was introduced in the polymer Mach–Zehnder waveguide to improve the poling and modulating efficiency. The characteristic parameters of the waveguide and the electrodes were carefully designed and the fabrication process was strictly controlled. Under 1550 nm, the insertion loss of the device was 12.7 dB. The measured switching rise time and fall time of the switch were 50.00 ns and 54.29 ns, respectively.

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