Design and experimental results of small silicon-based optical modulators

2004 ◽  
Author(s):  
Ching Eng Png ◽  
Graham T. Reed ◽  
William R. Headley ◽  
Kevin P. Homewood ◽  
Ansheng Liu ◽  
...  
Keyword(s):  
Experimental Results ◽  
Optical Modulators ◽  
Silicon Based

scholarly journals Double-layer graphene on photonic crystal waveguide electro-absorption modulator with 12 GHz bandwidth

Nanophotonics ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 2377-2385 ◽  
Author(s):  
Zhao Cheng ◽  
Xiaolong Zhu ◽  
Michael Galili ◽  
Lars Hagedorn Frandsen ◽  
Hao Hu ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Double Layer ◽  
Slow Light ◽  
Modulation Depth ◽  
Photonic Crystal Waveguide ◽  
Optical Modulators ◽  
Layer Graphene ◽  
Silicon Photonic ◽  
On Chip ◽  
Silicon Based

AbstractGraphene has been widely used in silicon-based optical modulators for its ultra-broadband light absorption and ultrafast optoelectronic response. By incorporating graphene and slow-light silicon photonic crystal waveguide (PhCW), here we propose and experimentally demonstrate a unique double-layer graphene electro-absorption modulator in telecommunication applications. The modulator exhibits a modulation depth of 0.5 dB/μm with a bandwidth of 13.6 GHz, while graphene coverage length is only 1.2 μm in simulations. We also fabricated the graphene modulator on silicon platform, and the device achieved a modulation bandwidth at 12 GHz. The proposed graphene-PhCW modulator may have potentials in the applications of on-chip interconnections.

CMOS compatible silicon-based Mach-Zehnder optical modulators with improved extinction ratio

2011 ◽  
Author(s):  
Zhiyong Li ◽  
Liang Zhou ◽  
Yingtao Hu ◽  
Xi Xiao ◽  
Yude Yu ◽  
...  
Keyword(s):  
Extinction Ratio ◽  
Optical Modulators ◽  
Cmos Compatible ◽  
Silicon Based

Process Modeling, Optimization and Characterization of Silicon Optical Waveguides by Anisotropic Wet Etching

2011 ◽  
Vol 403-408 ◽  
pp. 4295-4299
Author(s):  
H. Hazura ◽  
A.R. Hanim ◽  
B. Mardiana ◽  
Sahbudin Shaari ◽  
P.S. Menon
Keyword(s):  
Optical Waveguide ◽  
Optical Waveguides ◽  
Photonic Devices ◽  
Wet Etching ◽  
Fabrication Process ◽  
Etching Time ◽  
Optical Modulators ◽  
Silicon Waveguide ◽  
Simulation And Experiment ◽  
Silicon Based

We present a detailed fabrication process of silicon optical waveguide with a depth of 4μm via simulation and experiment. An anisotropic wet etching using Potassium Hydroxide (KOH) solutions was selected to study the influence of major fabrication parameters such as etch rate, oxidation time and development time to the fabrication performance. The fabrication of the silicon waveguide with the orientation of was modeled using ATHENA from 2D Silvaco software and was later compared with the actual fabricated device. Etching time of 4 minutes was required to etch the Si to the depth of 4μm to obtain a perfectly trapeizoidal optical waveguide structure. Our results show that the simulation model is trustworthy to predict the performance of the practical anisotropic wet etching fabrication process. The silicon-based waveguide components are targeted to be employed in realizing future photonic devices such as optical modulators.

Characterization of 0.5 MHz Silicon-Based Ultrasonic Nozzles Using Multiple Fourier Horns

2003 ◽  
Vol 782 ◽  
Author(s):  
Shirley C. Tsai ◽  
Yu L. Song ◽  
Yuan F. Chou ◽  
Terry K. Tseng ◽  
W. J. Chen ◽  
...  
Keyword(s):  
Resonant Frequency ◽  
Vibration Amplitude ◽  
Longitudinal Vibration ◽  
Impedance Analysis ◽  
Experimental Results ◽  
Vibration Measurement ◽  
Drive Power ◽  
Cross Sectional ◽  
Half Wavelength ◽  
Silicon Based

ABSTARCTThis paper presents the experimental results of impedance analysis and longitudinal vibration measurement of micro-fabricated 0.5 MHz silicon-based ultrasonic nozzles. Each nozzle is made of a piezoelectric drive section and a silicon-resonator consisting of multiple Fourier horns each with half wavelength design and twice amplitude magnification. The experimental results verified the simulation prediction of one pure longitudinal vibration mode at the resonant frequency in excellent agreement with the design value. Furthermore, at the resonant frequency, the measured longitudinal vibration amplitude gain at the nozzle tip increases as the number of Fourier horns (n) increases in good agreement with the theoretical value of 2n. Using this design, very high vibration amplitude at the nozzle tip can be achieved with no reduction in the tip cross sectional area. Therefore, the required electric drive power should be drastically reduced, decreasing the likelihood of transducer failure in ultrasonic atomization.

The Research on Preparation and Application of a Silicon-Based Efficient Coagulant

2011 ◽  
Vol 295-297 ◽  
pp. 543-546
Author(s):  
Jiao Jiao Wang ◽  
Chun Ying Han ◽  
Li Dan Zhang
Keyword(s):  
Industrial Wastewater ◽  
Experimental Results ◽  
Good Stability ◽  
Molar Ratio ◽  
Good Effect ◽  
Activation Time ◽  
Preparation Conditions ◽  
Silicon Based

In this paper, research was focused on the synthesis of a new efficient coagulant, boron -containing poly-silicate zinc (PSZB).The effect of the SiO2 concentration, Zn/Si molar ratio, B/Si molar ratio, activation time on flocculation properties were examined in detail. And the optimal preparation conditions were determined. At the same time, the industrial wastewater and life wastewater were treated for the properties test. The experimental results showed that the flocculant had good stability and good effect. It is a kind of good performance of flocculants.

scholarly journals Recent breakthroughs in carrier depletion based silicon optical modulators

Nanophotonics ◽  
2014 ◽  
Vol 3 (4-5) ◽  
pp. 229-245 ◽  
Author(s):  
Graham T. Reed ◽  
Goran Z. Mashanovich ◽  
Frederic Y. Gardes ◽  
Milos Nedeljkovic ◽  
Youfang Hu ◽  
...  
Keyword(s):  
Data Transmission ◽  
Free Carrier ◽  
Research Trends ◽  
Optical Modulators ◽  
Mid Infrared ◽  
Infrared Wavelength ◽  
Different Types ◽  
Silicon Based ◽  
Plasma Dispersion ◽  
Insight Into

AbstractThe majority of the most successful optical modulators in silicon demonstrated in recent years operate via the plasma dispersion effect and are more specifically based upon free carrier depletion in a silicon rib waveguide. In this work we overview the different types of free carrier depletion type optical modulators in silicon. A summary of some recent example devices for each configuration is then presented together with the performance that they have achieved. Finally an insight into some current research trends involving silicon based optical modulators is provided including integration, operation in the mid-infrared wavelength range and application in short and long haul data transmission links.

Critical Heat Flux of Water at Subatmospheric Pressures in Microchannels

2008 ◽  
Vol 130 (7) ◽  
Author(s):  
C.-J. Kuo ◽  
Y. Peles
Keyword(s):  
Heat Flux ◽  
Flow Visualization ◽  
Flow Pattern ◽  
Critical Heat Flux ◽  
Annular Flow ◽  
Hydraulic Diameter ◽  
Experimental Results ◽  
Rectangular Microchannels ◽  
Mass Fluxes ◽  
Silicon Based

Critical heat flux conditions for water at subatmospheric pressures in an array of silicon-based, 227μm hydraulic diameter, rectangular microchannels were experimentally studied. Experiments were conducted at exit pressures from 0.1atmto1atm, mass fluxes from 86kg∕m2sto303kg∕m2s, and an effective heat flux up to 444W∕cm2. The annular flow pattern revealed during flow visualization and the high exit qualities at CHF conditions suggest dryout to be the CHF mechanism. An analysis, based on the experimental results and known CHF characteristics, on the dependency of the critical heat flux on various variables was performed. It was found that the boiling number at the CHF condition was approximately a constant.

Enhanced Cross-Axis Rejection Capacitive Strain Gauge

2007 ◽  
Author(s):  
Babak Jamshidi ◽  
Robert G. Azevedo ◽  
Anand V. Jog ◽  
Albert P. Pisano
Keyword(s):  
Shear Strain ◽  
Strain Gauge ◽  
Mechanical Analysis ◽  
Silicon On Insulator ◽  
Experimental Results ◽  
Capacitance Measurement ◽  
Noise Assessment ◽  
Capacitive Strain ◽  
Cross Axis ◽  
Silicon Based

A novel bending plate capacitive strain gauge is designed, fabricated, and tested to measure strain in the range of 1 to 1000 με. This silicon-based strain sensor uses a unique structural design to increase the on-axis gain through the use of a bending beam structure while attenuating signals due to cross-axis strain. A differential capacitive measurement is used to improve the output, reduce the parasitic capacitance, and eliminate the capacitance measurement error due to temperature. The device is fabricated using silicon-on-insulator (SOI) technology. Experimental results exhibit an on-axis sensitivity of 50 aF/με and attenuation of the cross-axis sensitivity to shear strain to less than 10 percent of the applied shear strain. A detailed mechanical analysis of the suspension and deflection-amplifying bent-beam capacitor will be presented. Furthermore, the capacitive plate analytical model is compared to finite element simulations and verified with experimental results. In addition, a noise assessment of the device shows the electronics noise dominates the Brownian noise.

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