Integrated Silicon-based Optical Modulators: 100 Gb/s and Beyond

2019 ◽  
Author(s):  
Kensuke Ogawa
Keyword(s):  
Optical Modulators ◽  
Silicon Based

scholarly journals Double-layer graphene on photonic crystal waveguide electro-absorption modulator with 12 GHz bandwidth

Nanophotonics ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 2377-2385 ◽  
Author(s):  
Zhao Cheng ◽  
Xiaolong Zhu ◽  
Michael Galili ◽  
Lars Hagedorn Frandsen ◽  
Hao Hu ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Double Layer ◽  
Slow Light ◽  
Modulation Depth ◽  
Photonic Crystal Waveguide ◽  
Optical Modulators ◽  
Layer Graphene ◽  
Silicon Photonic ◽  
On Chip ◽  
Silicon Based

AbstractGraphene has been widely used in silicon-based optical modulators for its ultra-broadband light absorption and ultrafast optoelectronic response. By incorporating graphene and slow-light silicon photonic crystal waveguide (PhCW), here we propose and experimentally demonstrate a unique double-layer graphene electro-absorption modulator in telecommunication applications. The modulator exhibits a modulation depth of 0.5 dB/μm with a bandwidth of 13.6 GHz, while graphene coverage length is only 1.2 μm in simulations. We also fabricated the graphene modulator on silicon platform, and the device achieved a modulation bandwidth at 12 GHz. The proposed graphene-PhCW modulator may have potentials in the applications of on-chip interconnections.

CMOS compatible silicon-based Mach-Zehnder optical modulators with improved extinction ratio

2011 ◽  
Author(s):  
Zhiyong Li ◽  
Liang Zhou ◽  
Yingtao Hu ◽  
Xi Xiao ◽  
Yude Yu ◽  
...  
Keyword(s):  
Extinction Ratio ◽  
Optical Modulators ◽  
Cmos Compatible ◽  
Silicon Based

Process Modeling, Optimization and Characterization of Silicon Optical Waveguides by Anisotropic Wet Etching

2011 ◽  
Vol 403-408 ◽  
pp. 4295-4299
Author(s):  
H. Hazura ◽  
A.R. Hanim ◽  
B. Mardiana ◽  
Sahbudin Shaari ◽  
P.S. Menon
Keyword(s):  
Optical Waveguide ◽  
Optical Waveguides ◽  
Photonic Devices ◽  
Wet Etching ◽  
Fabrication Process ◽  
Etching Time ◽  
Optical Modulators ◽  
Silicon Waveguide ◽  
Simulation And Experiment ◽  
Silicon Based

We present a detailed fabrication process of silicon optical waveguide with a depth of 4μm via simulation and experiment. An anisotropic wet etching using Potassium Hydroxide (KOH) solutions was selected to study the influence of major fabrication parameters such as etch rate, oxidation time and development time to the fabrication performance. The fabrication of the silicon waveguide with the orientation of was modeled using ATHENA from 2D Silvaco software and was later compared with the actual fabricated device. Etching time of 4 minutes was required to etch the Si to the depth of 4μm to obtain a perfectly trapeizoidal optical waveguide structure. Our results show that the simulation model is trustworthy to predict the performance of the practical anisotropic wet etching fabrication process. The silicon-based waveguide components are targeted to be employed in realizing future photonic devices such as optical modulators.

scholarly journals Recent breakthroughs in carrier depletion based silicon optical modulators

Nanophotonics ◽  
2014 ◽  
Vol 3 (4-5) ◽  
pp. 229-245 ◽  
Author(s):  
Graham T. Reed ◽  
Goran Z. Mashanovich ◽  
Frederic Y. Gardes ◽  
Milos Nedeljkovic ◽  
Youfang Hu ◽  
...  
Keyword(s):  
Data Transmission ◽  
Free Carrier ◽  
Research Trends ◽  
Optical Modulators ◽  
Mid Infrared ◽  
Infrared Wavelength ◽  
Different Types ◽  
Silicon Based ◽  
Plasma Dispersion ◽  
Insight Into

AbstractThe majority of the most successful optical modulators in silicon demonstrated in recent years operate via the plasma dispersion effect and are more specifically based upon free carrier depletion in a silicon rib waveguide. In this work we overview the different types of free carrier depletion type optical modulators in silicon. A summary of some recent example devices for each configuration is then presented together with the performance that they have achieved. Finally an insight into some current research trends involving silicon based optical modulators is provided including integration, operation in the mid-infrared wavelength range and application in short and long haul data transmission links.

Design and experimental results of small silicon-based optical modulators

2004 ◽  
Author(s):  
Ching Eng Png ◽  
Graham T. Reed ◽  
William R. Headley ◽  
Kevin P. Homewood ◽  
Ansheng Liu ◽  
...  
Keyword(s):  
Experimental Results ◽  
Optical Modulators ◽  
Silicon Based

Recent Progress in High-Speed Silicon-Based Optical Modulators

2009 ◽  
Vol 97 (7) ◽  
pp. 1199-1215 ◽  
Author(s):  
Delphine Marris-Morini ◽  
Laurent Vivien ◽  
Gilles Rasigade ◽  
Jean-Marc Fedeli ◽  
Eric Cassan ◽  
...  
Keyword(s):  
High Speed ◽  
Recent Progress ◽  
Optical Modulators ◽  
Silicon Based

scholarly journals Graphene-Based BPSK and QPSK Modulators Working at A Very High Bit Rate (Up Tbps Range)

2021 ◽  
Author(s):  
Almir Wirth Lima Junior ◽  
Wilton Bezerra-Fraga
Keyword(s):  
Phase Shift ◽  
Integrated Circuit ◽  
Phase Shifters ◽  
Phase Shift Keying ◽  
Optical Modulators ◽  
Photonic Integrated Circuit ◽  
Shift Keying ◽  
High Bit Rate ◽  
Silicon Based ◽  
Binary Phase Shift Keying

Abstract We are presenting graphene-based Binary Phase Shift Keying (BPSK) and Quadrature Phase Shift Keying (QPSK) modulators, which can operate in the range from the TeraHertz up to the infrared. It is noteworthy that these devices have huge advantages over the silicon Mach-Zehnder optical modulators (MZMs) with lateral PN-junction ribwaveguide phase shifters. Among the countless advantages, we can mention, for example, that these modulators consist of only one waveguide and have a much simpler application system of the modulator signal (gate voltage) than in silicon-based MZMs. Other huge advantages are greater efficiency, and yet, they are cheaper and have shorter lengths (and consequently, greater integration in photonic integrated circuit (PIC)). The first step to present these modulators was to detail the graphene theory that is involved in this device. After this step, we show the project, numerical simulations, and analyses related to our graphene-based BPSK and QPSK modulators. We believe that these modulators will contribute to the generation of new devices made up of 2D materials, which should revolutionize this area of science.

Optimization of Silicon-Based Fabrication Process Modeling for Optical Modulator

2016 ◽  
Vol 846 ◽  
pp. 230-236
Author(s):  
Hazura Haroon ◽  
Hanim Abdul Razak ◽  
Anis Suhaila Mohd Zain ◽  
Najimiah Radiah Mohamad
Keyword(s):  
Process Modeling ◽  
Photonic Devices ◽  
Fabrication Process ◽  
Taguchi Methods ◽  
Optical Modulator ◽  
Optical Modulators ◽  
Wide Range ◽  
Diffusion Temperature ◽  
Silicon Based ◽  
Fabrication Parameters

Silicon-based photonic devices have emerged as a high demand technology for a wide range of applications. Most of these devices can be realized by optical waveguides where it forms the basic structure for device construction. This project involved the optimization of silicon waveguide fabrication process modeling using Silvaco. The optimized silicon-based waveguide components are aimed to be implemented in future photonic devices such as optical modulators. The Taguchi methods are employed to study the influence of fabrication parameters variations on the fabrication performance such as etch rate and waveguide structure. Four fabrication parameters are investigated includes the diffusion temperature of the N - type channel, diffusion temperature of the P - type channel, silicon orientation and oxide thickness. The result shows that the temperature during the diffusion on an N - type channel has the most influence on the performance of the modulation efficiency of the silicon optical waveguide.

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