Determination of residual stress in low-temperature PECVD silicon nitride thin films

2004 ◽  
Author(s):  
Mariusz P. Martyniuk ◽  
Jarek Antoszewski ◽  
Charles A. Musca ◽  
John M. Dell ◽  
Lorenzo Faraone
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Silicon Nitride ◽  
Low Temperature

Microbridge Testing of Thin Films Under Small Deformation

1999 ◽  
Vol 594 ◽  
Author(s):  
T. Y. Zhang ◽  
Y. J. Su ◽  
C. F. Qian ◽  
M. H. Zhao ◽  
L. Q. Chen
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Silicon Nitride ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
Small Deformation ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Pressure Chemical

AbstractThe present work proposes a novel microbridge testing method to simultaneously evaluate the Young's modulus, residual stress of thin films under small deformation. Theoretic analysis and finite element calculation are conducted on microbridge deformation to provide a closed formula of deflection versus load, considering both substrate deformation and residual stress in the film. Silicon nitride films fabricated by low pressure chemical vapor deposition on silicon substrates are tested to demonstrate the proposed method. The results show that the Young's modulus and residual stress for the annealed silicon nitride film are respectively 202 GPa and 334.9 MPa.

Measurements of Residual Stresses in Low-Stress Silicon Nitride Thin Films Using Micro-Rotating Structures

1996 ◽  
Vol 444 ◽  
Author(s):  
Xin Zhang ◽  
Yitshak Zohar ◽  
Tong-Yi Zhang
Keyword(s):  
Thin Films ◽  
Finite Element Method ◽  
Residual Stress ◽  
Finite Element ◽  
Silicon Nitride ◽  
Film Thickness ◽  
Strain Measurement ◽  
Strain Measurements ◽  
Micro Structures ◽  
Gas Ratio

AbstractA variety of rotating micro structures were designed, fabricated and characterized for residual-stress (or strain) measurements in low-stress silicon nitride thin films, deposited by LPCVD on silicon wafers. The sensitivities of the micro structures were calculated by finite element method (FEM) and verified experimentally. The results were further confirmed by utilizing the wafer-curvature method for stress measurements. The size of the structures enables local residual-stress (or strain) measurement. The stress level depends on both the film thickness and the gas ratio and also varies with the location on the wafer.

Research on some Key Mechanical Properties of Silicon Nitride Thin Films Deposited by PECVD

2015 ◽  
Vol 742 ◽  
pp. 773-777
Author(s):  
Qun Feng Yang ◽  
Jian Yi Zheng ◽  
Jun Qing Wang ◽  
Jun Hui Lin ◽  
Xue Nan Zhao ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Residual Stress ◽  
Silicon Nitride ◽  
Mechanical Characteristics ◽  
Dielectric Films ◽  
Rotating Beam ◽  
Atomic Force ◽  
Scanning Electron

The purpose of this work is to study the mechanical characteristics of the silicon nitride(SiNx) thin films prepared by PECVD technique, some researches as follows were carried out. First, the SiNx thin films were deposited on the two different substrates. Then, the atomic force microscope (AFM) was adopted to test the surface quality of the SiNxfilms, and the scanning electron microscope (SEM) was used to test the section morphology of the SiNxthin films. Finally, the rotating beam structures was applied to measure the residual stress in the SiNx films. The SiNxthin films with low stress can be fabricated through PECVD, in which the surface roughness values(Ra) are 1.261 nm and 2.383nm, and the residual stress is 43.5 kPa. Therefore, the SiNxthin films deposited by PECVD are suitable for the preparation of device dielectric films in MEMS.

Experimental determination of residual stress in silicon nitride diffusion bonds obtained by high-energy X-ray diffraction

2004 ◽  
Vol 148 (1) ◽  
pp. 60-63 ◽  
Author(s):  
M. Vila ◽  
M.L. Martínez ◽  
C. Prieto ◽  
P. Miranzo ◽  
M.I. Osendi ◽  
...  
Keyword(s):  
Residual Stress ◽  
Silicon Nitride ◽  
Experimental Determination ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffusion Bonds

scholarly journals Synthesis and Characterization of LPCVD Polysilicon and Silicon Nitride Thin Films for MEMS Applications

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
N. Sharma ◽  
M. Hooda ◽  
S. K. Sharma
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Silicon Nitride ◽  
Chemical Vapor ◽  
Process Conditions ◽  
Mems Devices ◽  
Material Deposition ◽  
Wide Range ◽  
Pressure Chemical ◽  
Annealing Effects

Inherent residual stresses during material deposition can have profound effects on the functionality and reliability of fabricated MEMS devices. Residual stress often causes device failure due to curling, buckling, or fracture. Typically, the material properties of thin films used in surface micromachining are not very well controlled during deposition. The residual stress, for example, tends to vary significantly for different deposition conditions; experiments were carried out to study the polysilicon and silicon nitride deposited by Low Pressure Chemical Vapor Deposition (LPCVD) method at wide range of process conditions. High temperature annealing effects on stress in case polysilicon are also reported. The reduced residual stress levels can significantly improve device performance, reliability, and yield as MEMS devices become smaller.

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