Measurements of Residual Stresses in Low-Stress Silicon Nitride Thin Films Using Micro-Rotating Structures

1996 ◽  
Vol 444 ◽  
Author(s):  
Xin Zhang ◽  
Yitshak Zohar ◽  
Tong-Yi Zhang
Keyword(s):  
Thin Films ◽  
Finite Element Method ◽  
Residual Stress ◽  
Finite Element ◽  
Silicon Nitride ◽  
Film Thickness ◽  
Strain Measurement ◽  
Strain Measurements ◽  
Micro Structures ◽  
Gas Ratio

AbstractA variety of rotating micro structures were designed, fabricated and characterized for residual-stress (or strain) measurements in low-stress silicon nitride thin films, deposited by LPCVD on silicon wafers. The sensitivities of the micro structures were calculated by finite element method (FEM) and verified experimentally. The results were further confirmed by utilizing the wafer-curvature method for stress measurements. The size of the structures enables local residual-stress (or strain) measurement. The stress level depends on both the film thickness and the gas ratio and also varies with the location on the wafer.

Extraction of the Coefficient of Thermal Expansion of Thin Films from Buckled Membranes

1998 ◽  
Vol 546 ◽  
Author(s):  
V. Ziebartl ◽  
O. Paul ◽  
H. Baltes
Keyword(s):  
Thin Films ◽  
Finite Element ◽  
Thermal Expansion ◽  
Silicon Nitride ◽  
Excellent Agreement ◽  
Energy Minimization ◽  
Coefficient Of Thermal Expansion ◽  
Temperature Dependent ◽  
Minimization Method ◽  
Energy Minimization Method

AbstractWe report a new method to measure the temperature-dependent coefficient of thermal expansion α(T) of thin films. The method exploits the temperature dependent buckling of clamped square plates. This buckling was investigated numerically using an energy minimization method and finite element simulations. Both approaches show excellent agreement even far away from simple critical buckling. The numerical results were used to extract Cα(T) = α0+α1(T−T0 ) of PECVD silicon nitride between 20° and 140°C with α0 = (1.803±0.006)×10−6°C−1, α1 = (7.5±0.5)×10−9 °C−2, and T0 = 25°C.

Microbridge Testing of Thin Films Under Small Deformation

1999 ◽  
Vol 594 ◽  
Author(s):  
T. Y. Zhang ◽  
Y. J. Su ◽  
C. F. Qian ◽  
M. H. Zhao ◽  
L. Q. Chen
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Silicon Nitride ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
Small Deformation ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Pressure Chemical

AbstractThe present work proposes a novel microbridge testing method to simultaneously evaluate the Young's modulus, residual stress of thin films under small deformation. Theoretic analysis and finite element calculation are conducted on microbridge deformation to provide a closed formula of deflection versus load, considering both substrate deformation and residual stress in the film. Silicon nitride films fabricated by low pressure chemical vapor deposition on silicon substrates are tested to demonstrate the proposed method. The results show that the Young's modulus and residual stress for the annealed silicon nitride film are respectively 202 GPa and 334.9 MPa.

Film thickness effect on texture and residual stress sign transition in sputtered TiN thin films

2017 ◽  
Vol 43 (15) ◽  
pp. 11992-11997 ◽  
Author(s):  
Yeting Xi ◽  
Kewei Gao ◽  
Xiaolu Pang ◽  
Huisheng Yang ◽  
Xiaotao Xiong ◽  
...  
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Film Thickness ◽  
Thickness Effect ◽  
Tin Thin Films

Numerical Simulation of Riveting Process

2010 ◽  
Vol 34-35 ◽  
pp. 641-645
Author(s):  
Hong Shuang Zhang
Keyword(s):  
Numerical Simulation ◽  
Finite Element Method ◽  
Residual Stress ◽  
Finite Element ◽  
Process Parameters ◽  
Static Method ◽  
Riveting Process ◽  
Relationship Of ◽  
The Relationship ◽  
Element Method

In order to fully understanding the distribution of residual stress after riveting and the relationship between residual stress and riveting process parameters during riveting, Finite Element Method was used to establish a riveting model. Quasi-static method to solve the convergence difficulties was adopted in riveting process. The riveting process was divided into six stages according to the stress versus time curves. The relationship of residual stress with rivet length and rivet hole clearance were established. The results show numerical simulation is effective for riveting process and can make a construction for the practical riveting.

FEM Simulation of the Effects of Residual Stress on Deformation of Gyroscope Frame

2010 ◽  
Vol 439-440 ◽  
pp. 838-841
Author(s):  
Jun Zhan ◽  
Gui Min Chen ◽  
Xiao Fang Liu ◽  
Qing Jie Liu ◽  
Qian Zhang
Keyword(s):  
Finite Element Method ◽  
Residual Stress ◽  
Finite Element ◽  
Stress Distribution ◽  
Tensile Stress ◽  
Large Deformation ◽  
Deformation Process ◽  
Fem Simulation ◽  
Machining Process ◽  
The Core

Gyroscope is the core of an inertia system and made by machining process. Machining process imports large residual stress. The residual stress will be released and induces large deformation of gyroscope frame. In this paper, the effects of residual stress on deformation of gyroscope frame were simulated by finite element method. Different stress distribution leads different deformation. Compressive stress can make sample long and tensile stress make sample short. The stress released in deformation process which reduced about 90%.

Sign in / Sign up

Export Citation Format

Share Document