Effect of in-plane and out-of-plane misorientation on the ferroelectric properties of thin film ferroelectric PZT infrared sensors on Si substrates

2003 ◽  
Author(s):  
Ronald N. Vallejo ◽  
Sang-Ho Yun ◽  
Judy Z. Wu ◽  
Meimei Z. Tidrow ◽  
H. Braaten ◽  
...  
Keyword(s):  
Thin Film ◽  
Ferroelectric Properties ◽  
Infrared Sensors ◽  
Si Substrates ◽  
Out Of Plane

Ferroelectric Properties of Sol-Gel Derived Ca1-xSrxBi4Ti4O15 Thin Films

2008 ◽  
Vol 368-372 ◽  
pp. 100-102 ◽  
Author(s):  
Su Hua Fan ◽  
Jing Xu ◽  
Guang Da Hu ◽  
Bo He ◽  
Feng Qing Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Fatigue Resistance ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
High Concentration ◽  
Gel Method ◽  
Si Substrates

Ca1-xSrxBi4Ti4O15 thin films were fabricated by sol-gel method on Pt(100)/Ti/SiO2/Si substrates. Influence of Sr content on the microstructure and ferroelectric properties of Ca1-xSrxBi4Ti4O15 thin films were systematically studied. The results indicate that Ca0.4Sr0.6Bi4Ti4O15 thin film has better ferroelectric properties with remanent polarization (2Pr) of 29.1+C/cm2, coercive field (2Ec) of 220 kV/cm. Furthermore, the film has good fatigue resistance. The better ferroelectric properties of Ca0.4Sr0.6Bi4Ti4O15 thin film originate from the relatively high concentration of a-axis oriented grains.

THICKNESS-DEPENDENT MICROSTRUCTURES AND ELECTRICAL PROPERTIES OF LiTaO3 THIN FILMS PREPARED BY A Sol-Gel PROCESS

2007 ◽  
Vol 21 (18n19) ◽  
pp. 3404-3411
Author(s):  
M. C. KAO ◽  
H. Z. CHEN ◽  
S. L. YOUNG ◽  
C. C. LIN ◽  
C. C. YU
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Relative Dielectric Constant ◽  
Coating Technology ◽  
Si Substrates ◽  
Sol Gel Process

LiTaO 3 thin films were deposited on Pt / Ti / SiO 2/ Si substrates by means of a sol-gel spin-coating technology and rapid thermal annealing (RTA). The influence of various annealing treatments on the characteristics of the thin films were studied by varying the single-annealed-layer thickness (50 ~ 200 nm ) and heating temperatures (500 ~ 800° C ) of the samples. Experimental results reveal that the single-annealed-layer strongly influences grain size, dielectricity and ferroelectricity of LiTaO 3 thin films. The grain size of LiTaO 3 thin film decreases slightly with increasing thickness of the single-annealed-layer, and highly c-axis orientated LiTaO 3 films can be obtained for a single-annealed-layer of 50 nm. When the thickness of the single-annealed-layer was increased from 50 to 200 nm, the relative dielectric constant of LiTaO 3 thin film decreased from 65 to 35, but the dielectric loss factor (tanδ) was increased. The LiTaO 3 films with the single-annealed-layer of 50 nm showed excellent ferroelectric properties in terms of a remanent polarization ( P r) of 12.3 μ C /cm2 (Ec ∼ 60 kV/cm), and a low current density of 5.2×l0-8 A /cm2 at 20 kV/cm.

Bi4Ti3O12 and Bi3.25La0.75Ti3O12 Thin Films Prepared by RF Magnetron Sputtering

2010 ◽  
Vol 434-435 ◽  
pp. 296-299
Author(s):  
Jian Ping Yang ◽  
Xing Ao Li ◽  
An You Zuo ◽  
Zuo Bin Yuan ◽  
Zhu Lin Weng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Growth Behavior ◽  
Ferroelectric Thin Films ◽  
Si Substrates ◽  
Grain Growth Behavior

Bi4Ti3O12 (BTO) and Bi3.25La0.75Ti3O12 (BLT) ferroelectric thin films were deposited on Pt/Si substrates by RF magnetron sputtering with Bi4Ti3O12 (BTO) and Bi3.25La0.75Ti3O12 (BLT) targets with 50-mm diameter and 5-mm thickness. The microstructure and ferroelectric properties of thin films were investigated. The grain growth behavior and ferroelectric properties such as remanent polarization were different in these two kinds of film, the effects of La doping in the BLT thin film were very obvious.

scholarly journals Improved Tunability And Energy Storage Density Properties Of Low Loss, Lead Free (Ba0.50Sr0.50)Tio3 And Ba(Zr0.15Ti0.85)O3 Bilayer Thin Film Stacks

2021 ◽  
Author(s):  
M.L.V. Mahesh ◽  
Prem Pal ◽  
Bhanu Prasad V.V. ◽  
A.R. James
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ferroelectric Properties ◽  
Sem Analysis ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
Low Loss ◽  
Si Substrates ◽  
Low Leakage ◽  
Low Leakage Current

Abstract Multilayer thin films of (Ba0.50Sr0.50)TiO3 (BST) and Ba(Zr0.15Ti0.85)O3 (BZT) were designed and grown using Pulsed LASER Deposition technology. The periodic (BST/BZT)n thin films were deposited on Pt‹111›/SiO2/Si substrates. X-ray diffraction reveals the presence of a polycrystalline, perovskite structure corresponding to the bilayer thin film stacks. SEM analysis confirmed the multilayer structure without any interdiffusion across layers. It was also found that the dielectric and ferroelectric properties of the thin films are strongly influenced by the periodic hetero-structures. The thin film stacks exhibit significantly higher tunabilities, comparable with multilayer thin films grown on various single crystal substrates such as LaAlO3, MgO and SrTiO3. Possible mechanisms explaining the other observed attributes such as lower dielectric loss resulting in higher Figure of Merit (FoM), low leakage current are discussed. The effect of incorporating a comparatively lower permittivity thin film in the multilayer stacks is presented. The observed properties of such multilayer structured films help in realization of low loss and highly tunable applications.

Effects of Rare Earth Gd Doping on Ferroelectric Properties of PbZr0.52Ti0.48O3 Thin Films Prepared by Sol–Gel Methods

2007 ◽  
Vol 336-338 ◽  
pp. 21-23
Author(s):  
Qiu Sun ◽  
Ying Song ◽  
Fu Ping Wang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Si Substrates ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Pzt Thin Film ◽  
Thermal Annealing Process ◽  
Better Than

The Pb(Zr0.52Ti0.48)O3 thin films with 0-2at.%Gd dopants (denoted as PGZT) were prepared on Pt/Ti/SiO2/Si substrates by a sol-gel technique and a rapid thermal annealing process. The structures of PGZT films were characterized and the ferroelectric properties such as P–V loop, C–V and I–V characteristics were investigated. Improved polarization (2Pr = 46.373 μC/cm2) and the low leakage current (J = 1.5×10-9 A/cm2 at the electric field of 400 kV/cm) were obtained in the PZT thin film with 1at.% Gd dopant, which was better than that of the pure PZT thin film (2Pr = 39.099 μC/cm2, J = 4.3×10-8A/cm2). With the Gd contents up to 2at.%, a decreased remanent polarization was found.

Improvement in Ferroelectric Properties of Sol-Gel Derived SrBi2Ta2O9 thin films with seeding layers

2002 ◽  
Vol 718 ◽  
Author(s):  
Ching-Chich Leu ◽  
Chao-Hsin Chien ◽  
Ming-Jui Yang ◽  
Ming-Che Yang ◽  
Tiao-Yuan Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Strontium Bismuth Tantalate ◽  
Seeding Layer ◽  
Si Substrates ◽  
Nucleation Sites

AbstractThe effects of a seeding layer, which was deposited on Pt/TiO2/SiO2/Si substrates using magnetron sputtering, on the characteristics of sol-gel-deposited strontium-bismuth-tantalate (SBT) thin films are investigated. The seeding layer serves as nucleation sites so homogeneous crystalline SBT films of bismuth-layered structure (BLS) with fine grains are successfully obtained by 750°C rapid thermal annealing in O2 ambient. The remanent polarization (2Pr) improves from 12.1 to 18.8 μC/cm2 with the addition of the seeding layer. In addition, the seeding layer also results in a lower nucleation temperature, allowing the use of 700°C annealing for 10 min to grow SBT films that are fully crystallized with BLS phase and shows good ferroelectric properties. Finally, crystallinity and microstructures of SBT films are found to be strongly dependent on the thickness of the seeding layer. Optimum Ta-seeded SBT thin film crystallized at 700°C for 10min depicts a higher 2Pr value (12.9 μC/cm2 (@5V) than that of the un-seeded films crystallized at 750°C for 1min.

Properties of Na0.5Bi0.5TiO3-SrTiO3 Ferroelectric Thin Films Prepared by a Modified MOSD Process

2017 ◽  
Vol 744 ◽  
pp. 417-421
Author(s):  
Ya Ping Wang ◽  
Zhuo Wang ◽  
Da Ji Li ◽  
Ya Nan Cui ◽  
Zhi Juan Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Deposition Process ◽  
Solution Deposition ◽  
Si Substrates ◽  
Capacitance Voltage ◽  
Surface Microstructures ◽  
Switching Mode

0.82NBT-0.18ST and 0.85NBT-0.15ST thin films have been prepared on Si substrates by a modified metalorganic solution deposition process. To achieve films with better ferroelectric properties, three main items have been changed in the process. Then the crystal structures, surface microstructures, hysteresis loops, fatigue curves and capacitance-voltage curves of the films were measured. It can be found that NBT-ST films can crystallize well after annealing at 650 °C for 5 minutes and have smooth surface microstructures. The 0.85NBT-0.15ST thin films exhibit better well-defined hysteresis loops than 0.82NBT-0.18ST, with a remnant polarization of 1.1 mC/cm2 and a coercive fields of 44.2 kV/cm. The clockwise C-V curves show that they have a desired polarization-type switching mode. The memory window of 0.82NBT-0.18ST thin film is about 1.8V, and that of 0.85NBT-0.15ST thin film is about 2.5V.

MFMOS Capacitor with Pb5Ge3O11 Thin Film for One Transistor Ferroelectric Memory Applications

1999 ◽  
Vol 596 ◽  
Author(s):  
T. K. Li ◽  
S. T. Hsu ◽  
J. J. Lee ◽  
Y. F. Gao ◽  
M. Engelhard
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Ferroelectric Properties ◽  
Memory Window ◽  
Low Dielectric Constant ◽  
Ferroelectric Capacitor ◽  
Si Substrates ◽  
Low Dielectric ◽  
Low Leakage ◽  
Ferroelectric Hysteresis

AbstractA ferroelectric Pb5Ge3O11 thin film with a low dielectric constant is proposed for application in one transistor ferroelectric memories. A strong depolarization voltage on the ferroelectric capacitor with MIFSFET structures diminishes the remanent polarization significantly and, therefore, the low dielectric constant becomes very important to widen the memory window. A memory window of 3V was estimated for the MFMOS memory structure with 2000Å ferroelectric Pb5Ge3O11 and a 100Å gate oxide. In the second part of this paper, Pb5Ge3O11 films deposited on Ir/Ti/SiO2/Si substrates, by using MOCVD system, was demonstrated. Germanium ethoxide, Ge(OC2H5)4, and lead bis-tetramethylheptadione, Pb(thd)2, were used as the MOCVD precursors. The film composition, phase formation, microstructure and ferroelectric properties are reported. The c-axis oriented Pb5Ge3O11 thin films prepared by MOCVD and RTP post-annealing showed a square ferroelectric hysteresis loop with Pr of 2.83 μC/cm2 and EC of 49 kV/cm. A low leakage current of 7.5 × 10−7 A/cm2 at 100 kV/cm and low dielectric constant of 41 were also demonstrated.

STRUCTURE CONTROL AND FERROELECTRIC PROPERTIES OF SrBi4Ti4O15 THIN FILMS ON Si SUBSTRATES COATED BY (100)- AND (110)-ORIENTED LaNiO3 ELECTRODES

2007 ◽  
Vol 14 (03) ◽  
pp. 435-438
Author(s):  
PILONG WANG ◽  
GUANGDA HU ◽  
YANXIA DING ◽  
SUHUA FAN
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Volume Fraction ◽  
Ferroelectric Properties ◽  
Epitaxial Relationship ◽  
Structure Control ◽  
Si Substrates

SrBi 4 Ti 4 O 15 ( SBTi ) thin films were prepared on (100)- and (110)-oriented LaNiO 3( LNO ) electrodes by a metalorgranic decomposition (MOD) technique at an annealing temperature of 650°C. c-axis-oriented SBTi thin film with volume fraction of 0.89 can be formed on a (100)-oriented LNO film due to the epitaxial relationship between c-axis-oriented SBTi and LNO (100). In contrast, SBTi film deposited on LNO (110) shows random orientations with strong (119) and (200) peaks. The remanent polarization (Pr) and coercive field (Ec) of the random oriented SBTi film were 18.1 μC/cm2 and 70 kV/cm, respectively. This suggests that (110)-oriented LNO electrode is a better choice for obtaining SBTi films with higher volume fraction of a(b)-axis-orientated grains.

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