Fabrication of a highly efficient optical modulator based on silicon-on-insulator

Author(s):  
Raghied M. H. Atta ◽  
Graham J. Ensell ◽  
Alan G. R. Evans ◽  
Jason C. E. Png ◽  
Graham T. Reed
Author(s):  
Junichi Fujikata ◽  
Masataka Noguchi ◽  
Younghyun Kim ◽  
Shigeki Takahashi ◽  
Takahiro Nakamura ◽  
...  

2010 ◽  
Vol 18 (21) ◽  
pp. 22061 ◽  
Author(s):  
Yang Yue ◽  
Lin Zhang ◽  
Jian Wang ◽  
Raymond G. Beausoleil ◽  
Alan E. Willner

2018 ◽  
Vol 10 (3) ◽  
pp. 1-7 ◽  
Author(s):  
Ran Hao ◽  
Ziwei Ye ◽  
Xiliang Peng ◽  
Yijie Gu ◽  
JianYao Jiao ◽  
...  

Micromachines ◽  
2019 ◽  
Vol 10 (5) ◽  
pp. 336 ◽  
Author(s):  
Beiju Huang ◽  
Zanyun Zhang ◽  
Zan Zhang ◽  
Chuantong Cheng ◽  
Huang Zhang ◽  
...  

A 4 × 25 Gb/s ultrawide misalignment tolerance wavelength-division-multiplex (WDM) transmitter based on novel bidirectional vertical grating coupler has been demonstrated on complementary metal-oxide-semiconductor (CMOS)-compatible silicon-on-insulator (SOI) platform. Simulations indicate the bidirectional grating coupler (BGC) is widely misalignment tolerant, with an excess coupling loss of only 0.55 dB within ±3 μm fiber misalignment range. Measurement shows the excess coupling loss of the BGC is only 0.7 dB within a ±2 μm fiber misalignment range. The bidirectional grating structure not only functions as an optical coupler, but also acts as a beam splitter. By using the bidirectional grating coupler, the silicon optical modulator shows low insertion loss and large misalignment tolerance. The eye diagrams of the modulator at 25 Gb/s don’t show any obvious deterioration within the waveguide-direction fiber misalignment ranger of ±2 μm, and still open clearly when the misalignment offset is as large as ±4 μm.


2004 ◽  
Author(s):  
Delphine Marris ◽  
Daniel Pascal ◽  
Alain Koster ◽  
Laurent Vivien ◽  
Eric Cassan ◽  
...  

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Milan M. Milošević ◽  
Weining Man ◽  
Geev Nahal ◽  
Paul J. Steinhardt ◽  
Salvatore Torquato ◽  
...  

AbstractWe introduce a hyperuniform-disordered platform for the realization of near-infrared photonic devices on a silicon-on-insulator platform, demonstrating the functionality of these structures in a flexible silicon photonics integrated circuit platform unconstrained by crystalline symmetries. The designs proposed advantageously leverage the large, complete, and isotropic photonic band gaps provided by hyperuniform disordered structures. An integrated design for a compact, sub-volt, sub-fJ/bit, hyperuniform-clad, electrically controlled resonant optical modulator suitable for fabrication in the silicon photonics ecosystem is presented along with simulation results. We also report results for passive device elements, including waveguides and resonators, which are seamlessly integrated with conventional silicon-on-insulator strip waveguides and vertical couplers. We show that the hyperuniform-disordered platform enables improved compactness, enhanced energy efficiency, and better temperature stability compared to the silicon photonics devices based on rib and strip waveguides.


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