Advances in multiple-quantum-well IR detectors

1991 ◽  
Author(s):  
Walter L. Bloss ◽  
Michael J. O'Loughlin ◽  
Mary Rosenbluth
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Ir Detectors

Performance Characteristics of N-Type SI-SI/GE Quantum well Infrared Photodetectors

1994 ◽  
Vol 299 ◽  
Author(s):  
V. D. Shadrin ◽  
V. T. Coon ◽  
F. L. Serzhenko
Keyword(s):  
Quantum Well ◽  
Exchange Interaction ◽  
Dark Current ◽  
Multiple Quantum Well ◽  
Performance Characteristics ◽  
Multiple Quantum ◽  
Ir Detectors ◽  
Quantum Well Infrared Photodetectors ◽  
Well Detector ◽  
Electron Exchange Interaction

AbstractThe theory of multiple quantum well n-type Si-SiGe IR detectors is presented. The coefficient of photoabsorption, quantum efficiency and responsivity of Si-SiGe quantum well detector are calculated taking in consideration the effects of depolarization and electron-electron exchange interaction. We show that the Si-SiGe quantum well detectors possess lower dark current and better performance characteristics compared to GaAs-AlGaAs photodetectors.

Characterization of Doped GexSi1−x Multiple Quantum well Structures for far- IR Detectors

1994 ◽  
Vol 299 ◽  
Author(s):  
D. W. Greve ◽  
R. Misra ◽  
R. Strong ◽  
T.E. Schlesinger
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Normal Incidence ◽  
Multiple Quantum ◽  
Free Carrier Absorption ◽  
Ir Detectors ◽  
Quantum Well Structures ◽  
X Ray ◽  
Carrier Absorption

AbstractDoped GexSi1−x/Si multiple quantum well structures have been grown by UHV/CVD and characterized by various techniques. SIMS and X- ray confirm the intended modulation of germanium and boron concentrations, and photoluminescence has been used to assess material quality. Strong free- carrier absorption has been observed at normal incidence in some samples. The results suggest that doping intermediate between 4 × 1018 cm−3 and 4 × 1019 cm−3 is necessary for useful detectors.

Advances in Multiple Quantum Well IR Detectors

1992 ◽  
Author(s):  
W. Bloss ◽  
M. O'Loughlin ◽  
M. Rosenbluth
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Ir Detectors

RESONANT TUNNELING STUDIES OF VARIABLY SPACED MULTIPLE QUANTUM WELL STRUCTURES IN THE AlGaAs SYSTEM

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Localized States ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Temperature Range ◽  
Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

High-Temperature High-Frequency Operation of Single and Multiple Quantum Well InGaAs Semiconductor Lasers

2000 ◽  
Author(s):  
William J. Siskaninetz ◽  
Hank D. Jackson ◽  
James E. Ehret ◽  
Jeffrey C. Wiemeri ◽  
John P. Loehr
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
Semiconductor Lasers ◽  
High Frequency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
High Frequency Operation

Photoconductive response time of a multiple quantum well pin modulator

1988 ◽  
Vol 24 (14) ◽  
pp. 854 ◽  
Author(s):  
R.J. Manning ◽  
P.J. Bradley ◽  
A. Miller ◽  
J.S. Roberts ◽  
P. Mistry ◽  
...  
Keyword(s):  
Quantum Well ◽  
Response Time ◽  
Multiple Quantum Well ◽  
Multiple Quantum

GaInAs/InP waveguide multiple-quantum-well optical modulator with 9 dB on/off ratio

1987 ◽  
Vol 23 (20) ◽  
pp. 1067 ◽  
Author(s):  
K. Wakita ◽  
S. Nojima ◽  
K. Nakashima ◽  
Y. Kawaguchi
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Optical Modulator ◽  
Multiple Quantum

Erratum: GaAs/AlGaAs multiple quantum well pin diodes grown by selective area epitaxy

1988 ◽  
Vol 24 (17) ◽  
pp. 1117
Author(s):  
D.A. Roberts ◽  
J.P.R. David ◽  
G. Hill ◽  
P.A. Houston ◽  
M.A. Pate ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Pin Diodes ◽  
Selective Area Epitaxy ◽  
Selective Area
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