Magnetically enhanced reactive ion etching of submicron silicon trenches

1991 ◽  
Author(s):  
Kent Cooper ◽  
Bich-Yen Nguyen ◽  
Jung-Hui Lin ◽  
Bernard J. Roman ◽  
Phil J. Tobin ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
Silicon Trenches

Reactive Ion Etching of Silicon Trenches Using  SF 6 /  O 2 Gas Mixtures

1991 ◽  
Vol 138 (10) ◽  
pp. 3076-3081 ◽  
Author(s):  
Tsengyou Syau ◽  
B. Jayant Baliga ◽  
Raymond W. Hamaker
Keyword(s):  
Reactive Ion Etching ◽  
Gas Mixtures ◽  
Ion Etching ◽  
Silicon Trenches

scholarly journals The black silicon method II:The effect of mask material and loading on the reactive ion etching of deep silicon trenches

1995 ◽  
Vol 27 (1-4) ◽  
pp. 475-480 ◽  
Author(s):  
Henri Jansen ◽  
Meint de Boer ◽  
Johannes Burger ◽  
Rob Legtenberg ◽  
Miko Elwenspoek
Keyword(s):  
Reactive Ion Etching ◽  
Black Silicon ◽  
Ion Etching ◽  
Mask Material ◽  
Silicon Trenches

Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.

1996 ◽  
Author(s):  
George F. McLane ◽  
Paul Cooke ◽  
Robert P. Moerkirk
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching

Modification of the n-Surface Profile of AlGaInN LEDs by Changing the Gas-Mixture Composition During Reactive Ion Etching

2020 ◽  
Vol 54 (6) ◽  
pp. 672-676
Author(s):  
L. K. Markov ◽  
I. P. Smirnova ◽  
M. V. Kukushkin ◽  
A. S. Pavluchenko
Keyword(s):  
Reactive Ion Etching ◽  
Surface Profile ◽  
Mixture Composition ◽  
Gas Mixture ◽  
Ion Etching

Reactive ion etching of III-V compounds using C2H6/H2

1988 ◽  
Vol 24 (13) ◽  
pp. 798 ◽  
Author(s):  
T. Matsui ◽  
H. Sugimoto ◽  
T. Ohishi ◽  
H. Ogata
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching

GaInAsP/InP mass transport laser monolithically integrated with photodetector using reactive ion etching

1989 ◽  
Vol 25 (15) ◽  
pp. 954 ◽  
Author(s):  
T. Matsui ◽  
H. Sugimoto ◽  
K. Ohtsuka ◽  
Y. Abe ◽  
H. Ogata
Keyword(s):  
Mass Transport ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Monolithically Integrated

scholarly journals An Assessment of Surface Treatments for Adhesion of Polyimide Thin Films

Polymers ◽  
2021 ◽  
Vol 13 (12) ◽  
pp. 1955
Author(s):  
Marco Cen-Puc ◽  
Andreas Schander ◽  
Minerva G. Vargas Gleason ◽  
Walter Lang
Keyword(s):  
Flexible Electronics ◽  
Oxygen Plasma ◽  
Reactive Ion Etching ◽  
Peel Test ◽  
Scratch Test ◽  
Peel Strength ◽  
Surface Treatments ◽  
Oxygen Plasma Treatment ◽  
Polyimide Films ◽  
Ion Etching

Polyimide films are currently of great interest for the development of flexible electronics and sensors. In order to ensure a proper integration with other materials and PI itself, some sort of surface modification is required. In this work, microwave oxygen plasma, reactive ion etching oxygen plasma, combination of KOH and HCl solutions, and polyethylenimine solution were used as surface treatments of PI films. Treatments were compared to find the best method to promote the adhesion between two polyimide films. The first selection of the treatment conditions for each method was based on changes in the contact angle with deionized water. Afterward, further qualitative (scratch test) and a quantitative adhesion assessment (peel test) were performed. Both scratch test and peel strength indicated that oxygen plasma treatment using reactive ion etching equipment is the most promising approach for promoting the adhesion between polyimide films.

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