Excimer lasers for superhigh NA 193-nm lithography

2003 ◽  
Author(s):  
Rainer Paetzel ◽  
Hans S. Albrecht ◽  
Peter Lokai ◽  
Wolfgang Zschocke ◽  
Thomas Schmidt ◽  
...  
Keyword(s):  
Excimer Lasers ◽  
193 Nm

Holographic Pattern Etching of Silicon—Carbide by Excimer Laser

1989 ◽  
Vol 158 ◽  
Author(s):  
M. Murahara ◽  
M. Yonekawa ◽  
K. Shirakawa
Keyword(s):  
Laser Beam ◽  
Present Method ◽  
Etching Rate ◽  
The Other ◽  
Laser Beams ◽  
Excimer Lasers ◽  
Holographic Method ◽  
Etching Depth ◽  
Krf Laser ◽  
193 Nm

ABSTRACTThe diffraction grating on SiC mirror was performed by a laser holographic method. In the present method, KrF laser and CIF3 was used for etchant gas. The ClF3 gas has an absorption band in the range between 200 and 400 nm. Therefore, CIF3 gas is effectively decomposed by the XeF, KrF and ArF excimer lasers' radiation. It is found that absorption of Si—C is about 50% in the range of between200 and 400 nm, and that the bonding energy of Si—C is lower than the photon energy of KrF laser beam. The above results indicate the direct decomposition of Si—Cbond. On the other hand, the threshold fluence energy for etching was 800 mJ/cm2 in 249 nm and in 193 nm as high as 7 J/cm2. In these results, the KrF laser is more effective than ArF laser. Then we applied KrF laser to crystalline SiC in an atmosphere of C1F3 gas. The divided two polarized KrF laser beams were interfered on the substrate. And the beams were used to photodissociated CIF3 gas in the proximity of substrate. Fluence of KrF laser beam was 1 J/cm2. The incidential angle of KrF laser beams was 20º and the grating gaps were 7170 Å, etching depth 1000 Å, and etching rate was 5 Å/pulse.

Investigating the action of the 193-nm and 223-nm radiation of excimer lasers on the cornea of the human eye in refractive surgery

2009 ◽  
Vol 76 (5) ◽  
pp. 263 ◽  
Author(s):  
A. M. Razhev ◽  
A. A. Zhupikov ◽  
D. S. Churkin ◽  
V. V. Chernykh ◽  
S. V. Kostenev
Keyword(s):  
Refractive Surgery ◽  
Excimer Lasers ◽  
Human Eye ◽  
193 Nm

High-repetition-rate ultranarrow-bandwidth 193-nm excimer lasers for DUV lithography

2000 ◽  
Author(s):  
Uwe Stamm ◽  
Rainer Paetzel ◽  
Igor Bragin ◽  
Juergen Kleinschmidt ◽  
Peter Lokai ◽  
...  
Keyword(s):  
Repetition Rate ◽  
High Repetition Rate ◽  
Excimer Lasers ◽  
High Repetition ◽  
193 Nm

High-power 193-nm excimer lasers for DUV lithography

2001 ◽  
Author(s):  
Rainer Paetzel ◽  
Klaus Vogler ◽  
Hans Stephen Albrecht ◽  
Thomas Schroeder ◽  
Igor Bragin ◽  
...  
Keyword(s):  
High Power ◽  
Excimer Lasers ◽  
193 Nm

Advances in 193 nm excimer lasers for mass spectrometry applications

2016 ◽  
Author(s):  
Ralph Delmdahl ◽  
Hans-Gerd Esser ◽  
Guido Bonati
Keyword(s):  
Mass Spectrometry ◽  
Excimer Lasers ◽  
193 Nm

High-repetition-rate excimer lasers for 193-nm lithography

2002 ◽  
Author(s):  
Wolfgang Zschocke ◽  
Hans Stephen Albrecht ◽  
Thomas Schroeder ◽  
Igor Bragin ◽  
Peter Lokai ◽  
...  
Keyword(s):  
Repetition Rate ◽  
High Repetition Rate ◽  
Excimer Lasers ◽  
High Repetition ◽  
193 Nm

The Clifford Paterson Lecture, 1988 - Microlithography and the ultraviolet: experiments with an excimer laser

1988 ◽  
Vol 419 (1857) ◽  
pp. 173-180
Keyword(s):  
Ultraviolet Light ◽  
Excimer Laser ◽  
Laser Light ◽  
Optical Systems ◽  
Excimer Lasers ◽  
Industrial Practice ◽  
Near Ultraviolet ◽  
Semiconductor Substrates ◽  
193 Nm

Microlithography on, for example semiconductor substrates for making microchips, can in present industrial practice create structures with detail on a scale no smaller than 1-2 μm; this is because visible or very near ultraviolet light is used to produce images on the lithographic resist and the resolution is limited by the wavelength. Excimer lasers produce intense beams of light of wavelengths down to and below 193 nm and the properties of the laser light are in many other ways well adapted to microlithography. The development of appropriate optical systems and some initial experiments with silicon as substrate are described.

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