High-power 193-nm excimer lasers for DUV lithography

2001 ◽  
Author(s):  
Rainer Paetzel ◽  
Klaus Vogler ◽  
Hans Stephen Albrecht ◽  
Thomas Schroeder ◽  
Igor Bragin ◽  
...  
Keyword(s):  
High Power ◽  
Excimer Lasers ◽  
193 Nm

scholarly journals Kinetics of the active media of nuclear-pumped lasers

1993 ◽  
Vol 11 (4) ◽  
pp. 655-661 ◽  
Author(s):  
A.M. Boichenko ◽  
A.V. Karelin ◽  
O.V. Sereda ◽  
S.I. Yakovlenko
Keyword(s):  
Numerical Simulation ◽  
High Power ◽  
Short Wavelength ◽  
Noble Gases ◽  
Excimer Lasers ◽  
Active Media ◽  
Metal Vapors ◽  
Kinetics Of

Numerical simulation of active media nuclear-pumped lasers on noble gases and their mixtures with metal vapors are presented. Prospects of creation of high-power short-wavelength nuclear-pumped excimer lasers are discussed.

High power ultrafast excimer lasers

1991 ◽  
Vol 69 (1) ◽  
pp. R1-R19 ◽  
Author(s):  
Iain A. McIntyre ◽  
Charles K. Rhodes
Keyword(s):  
High Power ◽  
Excimer Lasers

Holographic Pattern Etching of Silicon—Carbide by Excimer Laser

1989 ◽  
Vol 158 ◽  
Author(s):  
M. Murahara ◽  
M. Yonekawa ◽  
K. Shirakawa
Keyword(s):  
Laser Beam ◽  
Present Method ◽  
Etching Rate ◽  
The Other ◽  
Laser Beams ◽  
Excimer Lasers ◽  
Holographic Method ◽  
Etching Depth ◽  
Krf Laser ◽  
193 Nm

ABSTRACTThe diffraction grating on SiC mirror was performed by a laser holographic method. In the present method, KrF laser and CIF3 was used for etchant gas. The ClF3 gas has an absorption band in the range between 200 and 400 nm. Therefore, CIF3 gas is effectively decomposed by the XeF, KrF and ArF excimer lasers' radiation. It is found that absorption of Si—C is about 50% in the range of between200 and 400 nm, and that the bonding energy of Si—C is lower than the photon energy of KrF laser beam. The above results indicate the direct decomposition of Si—Cbond. On the other hand, the threshold fluence energy for etching was 800 mJ/cm2 in 249 nm and in 193 nm as high as 7 J/cm2. In these results, the KrF laser is more effective than ArF laser. Then we applied KrF laser to crystalline SiC in an atmosphere of C1F3 gas. The divided two polarized KrF laser beams were interfered on the substrate. And the beams were used to photodissociated CIF3 gas in the proximity of substrate. Fluence of KrF laser beam was 1 J/cm2. The incidential angle of KrF laser beams was 20º and the grating gaps were 7170 Å, etching depth 1000 Å, and etching rate was 5 Å/pulse.

High-power XeCl excimer lasers

1992 ◽  
Author(s):  
Gennady A. Mesyats ◽  
Yu. I. Bychkov ◽  
Boris M. Kovalchuk
Keyword(s):  
High Power ◽  
Excimer Lasers

High Repetition Rate High Power Excimer Lasers

1989 ◽  
Author(s):  
Hubertus M. von Bergmann ◽  
Gordon L. Bredenkamp ◽  
Piet H. Swart
Keyword(s):  
High Power ◽  
Repetition Rate ◽  
High Repetition Rate ◽  
Excimer Lasers ◽  
High Repetition

Prospects for high-power high-repetition-rate industrial excimer lasers

2001 ◽  
Author(s):  
Vladimir M. Borisov ◽  
Oleg B. Khristoforov ◽  
Yurii B. Kirykhin ◽  
Aleksandr Y. Vinokhodov ◽  
Andrei I. Demin ◽  
...  
Keyword(s):  
High Power ◽  
Repetition Rate ◽  
High Repetition Rate ◽  
Excimer Lasers ◽  
High Repetition

Investigation of inhomogeneties and impurities in fluoride coatings for high-power excimer lasers

1993 ◽  
Author(s):  
Ute Kaiser ◽  
Norbert Kaiser ◽  
Peter Weisbrodt ◽  
Dirk Mademann ◽  
Erich J. Hacker
Keyword(s):  
High Power ◽  
Excimer Lasers

Super‐polished silicon carbide mirror for high‐power operation of excimer lasers in a vacuum ultraviolet spectral range

1990 ◽  
Vol 61 (2) ◽  
pp. 728-731 ◽  
Author(s):  
Kou Kurosawa ◽  
Wataru Sasaki ◽  
Masahiro Okuda ◽  
Yasuo Takigawa ◽  
Kunio Yoshida ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Spectral Range ◽  
High Power ◽  
Vacuum Ultraviolet ◽  
Excimer Lasers ◽  
High Power Operation ◽  
Power Operation
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