Modelling and characterization of diffractive optical propagation inside MEMS variable optical attenuator

2002 ◽  
Author(s):  
Xuhan Dai ◽  
Xiaolin Zhao ◽  
Bingchu Cai ◽  
Ying Cao
Keyword(s):  
Optical Propagation ◽  
Variable Optical Attenuator

Design, Simulation, Fabrication, and Characterization of a Digital Variable Optical Attenuator

2006 ◽  
Vol 15 (5) ◽  
pp. 1190-1200 ◽  
Author(s):  
W. Sun ◽  
W. Noell ◽  
M. Zickar ◽  
M.J. Mughal ◽  
F. Perez ◽  
...  
Keyword(s):  
Variable Optical Attenuator ◽  
Fabrication And Characterization

Production and characterization of Tm3+/Yb3+ codoped pedestal-type PbO–GeO2 waveguides

2014 ◽  
Vol 92 (7/8) ◽  
pp. 597-601 ◽  
Author(s):  
T.A.A. de Assumpção ◽  
M.A. Alvarado ◽  
M.I. Alayo ◽  
L.R.P. Kassab
Keyword(s):  
Thin Films ◽  
Plasma Etching ◽  
Near Field ◽  
Rare Earth Ions ◽  
Sputtering Deposition ◽  
Optical Propagation ◽  
Waveguide Width ◽  
Coupling Behavior ◽  
Conventional Photolithography

This work explores the production and characterization of pedestal-type active waveguides based on PbO–GeO2 (PGO) thin films codoped with Tm3+/Yb3+ rare earth ions. Silicon wafers containing around 1.7 μm of SiO2 thickness were used as substrate, and the pedestal structure was obtained by conventional photolithography and plasma etching in a reactive ion etching reactor. Plasma etching procedures were made in steps to reduce roughness at the laterals and sidewalls of waveguides. Around 0.5 μm of Tm3+/Yb3+ codoped PGO thin film was obtained by radio frequency magnetron sputtering deposition after etching procedures. Results of scanning electron microscopy confirmed the waveguide pedestal profile. Optical propagation losses around 4, 5, and 20 dB/cm were observed at 1050, 633, and 543 nm, respectively, for waveguide width in the 30–100 μm range. Near field profiles at these wavelengths and also at 980 nm are also reported and confirmed the multimode coupling behavior. The present results corroborate the possibility of using Tm3+/Yb3+ codoped PGO thin films as active waveguides for photonic applications.

scholarly journals Modeling and Characterization of an Electrowetting-Based Single-Mode Fiber Variable Optical Attenuator

2015 ◽  
Vol 21 (4) ◽  
pp. 253-261 ◽  
Author(s):  
Anna Dudus ◽  
Robert Blue ◽  
Michele Zagnoni ◽  
George Stewart ◽  
Deepak Uttamchandani
Keyword(s):  
Single Mode ◽  
Single Mode Fiber ◽  
Variable Optical Attenuator

Characterization of Fog and Snow Attenuations for Free-Space Optical Propagation

2009 ◽  
Vol 4 (8) ◽  
Author(s):  
Muhammad Saleem Awan ◽  
Laszlo Csurgai Horwath ◽  
Sajid Sheikh Muhammad ◽  
Erich Leitgeb ◽  
Farukh Nadeem ◽  
...  
Keyword(s):  
Free Space ◽  
Free Space Optical ◽  
Optical Propagation

scholarly journals Modeling and Characterization of a Vernier Latching MEMS Variable Optical Attenuator

2013 ◽  
Vol 22 (5) ◽  
pp. 1229-1241 ◽  
Author(s):  
Anartz Unamuno ◽  
Robert Blue ◽  
Deepak Uttamchandani
Keyword(s):  
Variable Optical Attenuator

Cathodoluminescence characterization of Si-doped orientation patterned GaAs crystals

2012 ◽  
Vol 1396 ◽  
Author(s):  
V. Hortelano ◽  
O. Martínez ◽  
J. Jiménez ◽  
M. Snure ◽  
C. Lynch ◽  
...  
Keyword(s):  
Frequency Conversion ◽  
Linear Optics ◽  
Non Linear Optics ◽  
Optical Propagation ◽  
Non Linear ◽  
Relevant Role ◽  
Si Doped ◽  
Terahertz Lasers ◽  
Impurities And Defects

ABSTRACTOrientation patterned (OP)-GaAs crystals are attractive materiasl for mid-infrared and terahertz lasers sources, using non linear optics frequency conversion from shorter wavelength sources. The optical propagation losses are critical to the fabrication of these sources; among the causes of optical losses the generation of defects and the incorporation of impurities must play a relevant role. The control of the incorporation of impurities and defects is, therefore, crucial to improve the performance of the OP-GaAs crystals as non linear optical materials. We present herein a cathodoluminescence (CL) analysis of OP-GaAS crystals intentionally doped with Si, in order to understand the incorporation paths of Si in the OP-GaAs crystals.

Morphological Characterization of Mycobacteriophage R1

1974 ◽  
Vol 32 ◽  
pp. 254-255
Author(s):  
B. L. Soloff ◽  
T. A. Rado
Keyword(s):  
Carbon Source ◽  
Stationary Phase ◽  
Growth Phase ◽  
Minimal Medium ◽  
Morphological Characterization ◽  
Logarithmic Growth Phase ◽  
Complete Lysis ◽  
Lysogenic Culture ◽  
Logarithmic Growth

Mycobacteriophage R1 was originally isolated from a lysogenic culture of M. butyricum. The virus was propagated on a leucine-requiring derivative of M. smegmatis, 607 leu−, isolated by nitrosoguanidine mutagenesis of typestrain ATCC 607. Growth was accomplished in a minimal medium containing glycerol and glucose as carbon source and enriched by the addition of 80 μg/ ml L-leucine. Bacteria in early logarithmic growth phase were infected with virus at a multiplicity of 5, and incubated with aeration for 8 hours. The partially lysed suspension was diluted 1:10 in growth medium and incubated for a further 8 hours. This permitted stationary phase cells to re-enter logarithmic growth and resulted in complete lysis of the culture.

Sign in / Sign up

Export Citation Format

Share Document