Cathodoluminescence characterization of Si-doped orientation patterned GaAs crystals

2012 ◽  
Vol 1396 ◽  
Author(s):  
V. Hortelano ◽  
O. Martínez ◽  
J. Jiménez ◽  
M. Snure ◽  
C. Lynch ◽  
...  

ABSTRACTOrientation patterned (OP)-GaAs crystals are attractive materiasl for mid-infrared and terahertz lasers sources, using non linear optics frequency conversion from shorter wavelength sources. The optical propagation losses are critical to the fabrication of these sources; among the causes of optical losses the generation of defects and the incorporation of impurities must play a relevant role. The control of the incorporation of impurities and defects is, therefore, crucial to improve the performance of the OP-GaAs crystals as non linear optical materials. We present herein a cathodoluminescence (CL) analysis of OP-GaAS crystals intentionally doped with Si, in order to understand the incorporation paths of Si in the OP-GaAs crystals.

2011 ◽  
Vol 1288 ◽  
Author(s):  
O. Martínez ◽  
M. Avella ◽  
V. Hortelano ◽  
J. Jiménez ◽  
M. Snure ◽  
...  

ABSTRACTOrientation patterned (OP)-GaAs crystals have high potential as non linear optical systems. Mid-infrared and terahertz lasers sources can be fabricated with these crystals by frequency conversion from shorter wavelength sources. The optical propagation losses are critical; therefore, the OP-GaAs crystals must have high quality with low incorporation of defects and high homogeneity to reduce the refractive index fluctuations. Defects with electro-optic signature must be characterized in order to reduce their presence. Cathodoluminescence studies of these crystals permit the distribution of the main defects to be established, both extended and point defects. Special attention is paid to the role of the walls between the two domain orientations, and to the incorporation of impurities in Si-doped samples.


2018 ◽  
Vol 1151 ◽  
pp. 126-134 ◽  
Author(s):  
Nasreddine Ennaceur ◽  
Boutheina Jalel ◽  
Rokaya Henchiri ◽  
Marie Cordier ◽  
Isabelle Ledoux-Rak

1993 ◽  
Vol 14 (3) ◽  
pp. 635-643 ◽  
Author(s):  
T. Hanemann ◽  
E. A. Soto Bustamante ◽  
T. Weyrauch ◽  
W. Haase

1989 ◽  
Vol 24 (1) ◽  
pp. 283-301 ◽  
Author(s):  
C. Noël ◽  
C. Friedrich ◽  
V. Leonard ◽  
P. Le Barny ◽  
G. Ravaux ◽  
...  

Author(s):  
Ajmal Mohamed ◽  
Jean-Baptiste Dherbecourt ◽  
Myriam Raybaut ◽  
Jean-Michel Melkonian ◽  
Antoine Godard ◽  
...  

Symmetry ◽  
2021 ◽  
Vol 13 (1) ◽  
pp. 153 ◽  
Author(s):  
Christophe Humbert ◽  
Thomas Noblet

To take advantage of the singular properties of matter, as well as to characterize it, we need to interact with it. The role of optical spectroscopies is to enable us to demonstrate the existence of physical objects by observing their response to light excitation. The ability of spectroscopy to reveal the structure and properties of matter then relies on mathematical functions called optical (or dielectric) response functions. Technically, these are tensor Green’s functions, and not scalar functions. The complexity of this tensor formalism sometimes leads to confusion within some articles and books. Here, we do clarify this formalism by introducing the physical foundations of linear and non-linear spectroscopies as simple and rigorous as possible. We dwell on both the mathematical and experimental aspects, examining extinction, infrared, Raman and sum-frequency generation spectroscopies. In this review, we thus give a personal presentation with the aim of offering the reader a coherent vision of linear and non-linear optics, and to remove the ambiguities that we have encountered in reference books and articles.


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