Use of Viscoelastic Properties of Metal Alkoxide Sols to Control the Microstructure and Quality of Spin-coated Sol-gel Thin-films

2002 ◽  
Author(s):  
Lam T. Nguyen ◽  
Pandiyan Murugaraj ◽  
Colin Rix ◽  
David Mainwaring
1990 ◽  
Vol 202 ◽  
Author(s):  
Keiichi Nashimoto ◽  
Michael J. Cima ◽  
Wendell E. Rhine

ABSTRACTThe evolution of the microstructure of sol-gel derived LiNbO3 thin films was investigated to understand the growth of epitaxial films. LiNbO3 films were prepared from a precursor solution of lithium ethoxide and niobium pentaethoxide. Prehydrolysis promoted the development of polycrys-talline LiNbO3 films, whereas nonhydrolysis produced solid-state epitaxial growth of LiNbO3 films on sapphire substrates. Although the films looked smooth after annealing at 400°C, the morphology of the films changed, depending on substrates and precursors, due to grain growth at high annealing temperature. Prehydrolysis of the alkoxides caused a decrease in the temperature at which grain growth occurred, whereas the film prepared from the nonhydrolyzed precursor on a sapphire substrate showed denser texture and contained abnormally large domains that appeared to be single phase.


Author(s):  
Daqun Bao ◽  
Yi Zhang ◽  
Hang Guo

This paper presents the growth and characterization of PZT thin films by using the sol-gel technology. In this paper, we study the influences of annealing process and different substrates on the orientation and crystalline quality of PZT thin films. The crystallographic structures are tested by using X-ray diffractometer (XRD), and the residual stresses of PZT thin films are obtained by calculation from a derived stress-strain equation in XRD analysis. Moreover, surface morphology and microstructure of the films are investigated by using AFM and SEM, and the polarization hysteresis of PZT thin films is measured by using a Sawyer Tower circuit. The results show that PZT thin films prepared by using the sol-gel method have good properties and can be used for developing PZT-based micro and nano devices.


2001 ◽  
Vol 688 ◽  
Author(s):  
Hirofumi Matsuda ◽  
Takashi Iijima ◽  
Hiroshi Uchida ◽  
Isao Okada ◽  
Takayuki Watanabe ◽  
...  

AbstractFerroelectric Bi4Ti3O12 (BIT) thin films were modified by the substitution of Sr2+ ions for Bi3+ ions and of Nb5+ for Ti4+ (codoping) by spin-coating and decomposition of chemical solutions of metal-alkoxide materials (the nominal compositions of Bi4−xSrxTi3−xNbxO12 where x=0.0, 0.5, 1.0, 1.5). Single-phase thin films were crystallized above 550°C with BIT-type structure. The ferroelectric properties were found, though, with the values of Pr=10 μC/cm2 Ec=100 kV/cm, εr=300, and tanδ<5 % for Bi3.5Sr0.5Ti2.5Nb0.5O12 (x=0.5) annealed at 650 °C. Perhaps due to the lowering of the Curie temperature with increasing x, the maximum value of δr increased.


2003 ◽  
Vol 787 ◽  
Author(s):  
M. Joseph Roberts ◽  
Scott K. Johnson

ABSTRACTWorldwide, there is great interest in new processes for production of nanoscale features in materials surfaces. Our recent work explores imprinting of nanosized objects into thin films. In this paper, we present results from surface imprinting of TiOx sol-gel films with anodized alumina. Scanning Probe Microscopy provides evidence for the quality of the imprinting process.


2007 ◽  
Vol 336-338 ◽  
pp. 136-139
Author(s):  
Dan Xie ◽  
Wei Pan ◽  
Tian Ling Ren ◽  
Li Tian Liu ◽  
Zhi Min Dang

The uniform Sr0.5Ba0.5Bi4Ti4O15 thin films were prepared using a modified Sol-Gel technique and the influence of precursor on the microstructure and characterization of thin films were studied. The stability and uniformity of precursor solution is key issue for the quality of thin films. Ethanolamine is an effective complexation reagent of Bi3+, which could moderate the acidity of precursor. When pH value and concentration of precursor solution was about 3.5 and 0.35M respectively, the smooth and uniform Sr0.5Ba0.5Bi4Ti4O15 thin films could be obtained. The Bi-layered perovskite structure of Sr0.5Ba0.5Bi4Ti4O15 formed at 750°C. The morphology of the grains in Sr0.5Ba0.5Bi4Ti4O15 thin films was elliptoid and the grain size was about 90 ~ 100 nm.


1993 ◽  
Vol 310 ◽  
Author(s):  
Keiichi Nashimoto

AbstractDense epitaxial LiNbO3 thin films without any misoriented plane on sapphire substrates were obtained with a sol-gel process utilizing 2-methoxyethanol based metal alkoxide precursors without pre-hydrolysis and rapid thermal annealing. Epitaxial LiNbO3 films annealed at 700°C were transparent and showed refractive indices close to bulk single crystal values. Epitaxial and transparent LiTaO3 films crystallized successfully on sapphire substrates with single orientations with the present process. X-ray rocking curve full widths at half maximum of epitaxial LiNbO3 and LiTaO3 films on sapphire (110) substrates and annealed at 700°C were less than 0.4 degree.


1994 ◽  
Vol 361 ◽  
Author(s):  
Keiichi Nashimoto ◽  
Shigetoshi Nakamura

ABSTRACTEpitaxial and highly oriented lead titanate based thin films were prepared by a sol-gel process using non-hydrolyzed methoxyethoxide precursors and RTA process. PbTiO3 crystallized with preferred (001) or (100) orientation on SrTiO3 (100) and MgO (100). Solid phase (001) oriented epitaxial growth of PZT on SrTio3 was observed at 425°C, directly from the amorphous phase. That of PZT on MgO was observed at temperatures above 550°C, after the formation of pyrochlore phase. The PZT on SrTiO3 had a single (001) orientation and rocking curve full width at half maximum less than 0.08°. PZT showed a weak preferred (111) orientation on sapphire (0001) substrates, while highly (111) oriented PLT thin films were obtained on them. The guided wave modes were excited by a prism coupling for PZT thin films crystallized on SrTiO3 and MgO. Electrical properties of epitaxial PZT and PLT thin films on Nb-SrTiO3 substrates were characterized.


1994 ◽  
Vol 341 ◽  
Author(s):  
Yudan Lou ◽  
Yuhuan Xu ◽  
John D. Mackenzie

AbstractMultilayer epitaxial ferroelectric PbTiO3 and SrTiO3 thin films were grown alternatively on single crystal SrTiO3 (001) substrate by the sol-gel technique in this study. Lead titanium double metal alkoxide and strontium titanium double metal alkoxide were used for dip coating. By controlling the dip coating speed and the concentration of sol-gel solution, different thickness of films was obtained. The average thickness of each PbTiO3 or SrTiO3 layer was 120 Å which was measured by SEM method. By using XRD the structure of the epitaxial multilayer films was examined. The epitaxial PbTiO3 and SrTiO3 thin films could be obtained at 700°C and 800°C respectively. The change of transmittance with wavelength on 12( 6×[SrTiO3/PbTiO3]) layer films was measured. The structure and the optical properties of the films were discussed.


1996 ◽  
Vol 433 ◽  
Author(s):  
Keiichi Nashimoto ◽  
Shigetoshi Nakamura ◽  
Hiroaki Moriyama

AbstractSolid phase epitaxial growth of LiNbO3 thin films, using a methoxyethoxide solution process, has been examined for optical waveguide applications. The growth variables such as crystallization temperature, crystallization time, and film thickness have been found to be critical factors in the quality of LiNbO3 thin films. High quality epitaxial LiNbO3 films were grown on sapphire (001) substrates using optimized buffer layers. The LiNbO3 showed single orientation, rocking curve full width at half maximum less than 0.04°, and rms roughness of 2.3 nm, in addition to refractive index of 2.24 and optical propagation loss of 3.0 dB/cm.


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