Preparation and Characterization of Metal Alkoxide Derived Epitaxial Lead Titanate Based Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
Keiichi Nashimoto ◽  
Shigetoshi Nakamura

ABSTRACTEpitaxial and highly oriented lead titanate based thin films were prepared by a sol-gel process using non-hydrolyzed methoxyethoxide precursors and RTA process. PbTiO3 crystallized with preferred (001) or (100) orientation on SrTiO3 (100) and MgO (100). Solid phase (001) oriented epitaxial growth of PZT on SrTio3 was observed at 425°C, directly from the amorphous phase. That of PZT on MgO was observed at temperatures above 550°C, after the formation of pyrochlore phase. The PZT on SrTiO3 had a single (001) orientation and rocking curve full width at half maximum less than 0.08°. PZT showed a weak preferred (111) orientation on sapphire (0001) substrates, while highly (111) oriented PLT thin films were obtained on them. The guided wave modes were excited by a prism coupling for PZT thin films crystallized on SrTiO3 and MgO. Electrical properties of epitaxial PZT and PLT thin films on Nb-SrTiO3 substrates were characterized.

1993 ◽  
Vol 310 ◽  
Author(s):  
Keiichi Nashimoto

AbstractDense epitaxial LiNbO3 thin films without any misoriented plane on sapphire substrates were obtained with a sol-gel process utilizing 2-methoxyethanol based metal alkoxide precursors without pre-hydrolysis and rapid thermal annealing. Epitaxial LiNbO3 films annealed at 700°C were transparent and showed refractive indices close to bulk single crystal values. Epitaxial and transparent LiTaO3 films crystallized successfully on sapphire substrates with single orientations with the present process. X-ray rocking curve full widths at half maximum of epitaxial LiNbO3 and LiTaO3 films on sapphire (110) substrates and annealed at 700°C were less than 0.4 degree.


2001 ◽  
Author(s):  
Chih-Ming Wang ◽  
Ying-Chung Chen ◽  
Ming-Cheng Kao ◽  
Yun-Hsing Lai

2000 ◽  
Vol 39 (Part 1, No. 6A) ◽  
pp. 3579-3583 ◽  
Author(s):  
Chih-Ming Wang ◽  
Yao-Te Huang ◽  
Ying-Chung Chen ◽  
Maw-Shung Lee ◽  
Ming-Cheng Kao

2013 ◽  
Vol 61 (1) ◽  
pp. 10302 ◽  
Author(s):  
Feroz Ahmad Mir ◽  
Javid A. Banday ◽  
Christian Chong ◽  
Pierre Dahoo ◽  
Fayaz A. Najar

1997 ◽  
Vol 12 (3) ◽  
pp. 596-599 ◽  
Author(s):  
Ji Zhou ◽  
Qing-Xin Su ◽  
K. M. Moulding ◽  
D. J. Barber

Ba(Mg1/3Ta2/3)O3 thin films were prepared by a sol-gel process involving the reaction of barium isopropoxide, tantalum ethoxide, and magnesium acetate in 2-methoxyethanol and subsequently hydrolysis, spin-coating, and heat treatment. Transmission electron microscopy, x-ray diffraction, and Raman spectroscopy were used for the characterization of the thin films. It was shown that the thin films tend to crystallize with small grains sized below 100 nm. Crystalline phase with cubic (disordered) perovskite structure was formed in the samples annealed at a very low temperature (below 500 °C), and well-crystallized thin films were obtained at 700 °C. Although disordered perovskite is dominant in the thin films annealed below 1000 °C, a low volume fraction of 1 : 2 ordering domains was found in the samples and grows with an increase of annealing temperature.


1997 ◽  
Vol 9 (11) ◽  
pp. 2583-2587 ◽  
Author(s):  
Yongan Yan ◽  
Yasukazu Hoshino ◽  
Zhibang Duan ◽  
S. Ray Chaudhuri ◽  
Arnab Sarkar

Sign in / Sign up

Export Citation Format

Share Document