Influence of intraband relaxation processes on threshold and power-current characteristics of semiconductor lasers

2002 ◽  
Author(s):  
Georgy G. Zegrya ◽  
Natalya A. Gunko ◽  
Eugen B. Dogonkin
Keyword(s):  
Semiconductor Lasers ◽  
Relaxation Processes ◽  
Intraband Relaxation ◽  
Current Characteristics

Light–current characteristics of high-power pulsed semiconductor lasers (1060 nm) operating at increased (up to 90 °C) temperatures

2021 ◽  
Vol 51 (2) ◽  
pp. 129-132
Author(s):  
P S Gavrina ◽  
A A Podoskin ◽  
E V Fomin ◽  
D A Veselov ◽  
V V Shamakhov ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
High Power ◽  
Current Characteristics

Simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm

2014 ◽  
Vol 44 (2) ◽  
pp. 149-156 ◽  
Author(s):  
P V Gorlachuk ◽  
A V Ivanov ◽  
V D Kurnosov ◽  
K V Kurnosov ◽  
V I Romantsevich ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
High Power ◽  
Power Semiconductor ◽  
Current Characteristics

scholarly journals О токовой зависимости эффективности инжекции и относительном вкладе скорости эмиссии и внутренних оптических потерь в насыщение ватт-амперной характеристики мощных импульсных лазеров (λ=1.06 мкм)

2020 ◽  
Vol 54 (8) ◽  
pp. 721
Author(s):  
А.В. Рожков
Keyword(s):  
Semiconductor Lasers ◽  
Cross Section ◽  
Charge Carriers ◽  
Optical Losses ◽  
Interface Boundary ◽  
Injection Efficiency ◽  
Current Dependence ◽  
Root Cause ◽  
Lorentz Theory ◽  
Current Characteristics

The results of numerical simulation of the current dependence of the injection efficiency in the active area of the laser based on separate confinement heterostructures are presented. The feature of the transfer of charge carriers through isotype N-n heterotransitions on the interface boundary of waveguide and active areas is shown. Using the classic dependencies of the Drude-Lorentz theory, the cross-section of electrons and holes for the GaAs waveguide was evaluated. The resulting values of σe= 1.05∙10-18 cm2 and σp= 1.55∙10-19 cm2 and current dependencies of the injection efficiency allowed to determine the root-cause reason for the pulse power saturation of semiconductor lasers. It has been established that saturation of power-current characteristics is dominated by holes escape from the active region to the waveguide and internal optical losses are lower confinement factors.

Learning Semiconductor Laser Characteristics Using Virtual Analogue Simulation

1998 ◽  
Vol 35 (1) ◽  
pp. 71-78 ◽  
Author(s):  
W. N. Cheung
Keyword(s):  
Semiconductor Laser ◽  
Semiconductor Lasers ◽  
Laser Diodes ◽  
Rate Equations ◽  
Nonlinear Behaviour ◽  
Simple Method ◽  
Modulation Response ◽  
Analogue Simulation ◽  
Current Characteristics ◽  
Semiconductor Laser Diodes

This article describes a simple method for simulating typical characteristics of semiconductor lasers based on the rate equations of the device. The method being implemented in PSpice may be used to demonstrate the light-current characteristics, charge number clamping, modulation response, transient and nonlinear behaviour of semiconductor laser diodes.

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