A new density matrix theory for semiconductor lasers, including non-Markovian intraband relaxation and its application to nonlinear gain

1991 ◽  
Vol 27 (6) ◽  
pp. 1630-1641 ◽  
Author(s):  
A. Tomita ◽  
A. Suzuki
Keyword(s):  
Density Matrix ◽  
Semiconductor Lasers ◽  
Matrix Theory ◽  
Nonlinear Gain ◽  
Intraband Relaxation ◽  
Density Matrix Theory

Optical Gain in Bgan Lattice-Matched to (0001) 6H-SiC

1997 ◽  
Vol 482 ◽  
Author(s):  
T. Honda ◽  
M. Tsubamoto ◽  
Y. Kuga ◽  
H. Kawanishi
Keyword(s):  
Ternary System ◽  
Density Matrix ◽  
Spectral Region ◽  
Carrier Density ◽  
Matrix Theory ◽  
Optical Gain ◽  
Bandgap Energy ◽  
Intraband Relaxation ◽  
Density Matrix Theory ◽  
Lattice Matched

AbstractThe optical gain of a BGaN ternary system lattice-matched to 6H-SiC was estimated. The parameters used in this estimation, such as effective mass and a bandgap energy, were estimated according to Harrison's theory. The optical gain was estimated using the density matrix theory with intraband relaxation broadening. The transparency carrier density of BGaN is slightly only smaller than that of GaN. It may be possible to fabricate a BGaN-based semiconductor laser operating in the UV spectral region.

c. Internal rotation of the nitroso group in p-substituted nitrosoanilines by the density matrix line-shape method

1974 ◽  
Vol 27 (1) ◽  
pp. 21 ◽  
Author(s):  
PD Buckley ◽  
AR Furness ◽  
KW Jolley ◽  
DN Pinder
Keyword(s):  
Density Matrix ◽  
Internal Rotation ◽  
Line Shape ◽  
Matrix Theory ◽  
Activation Parameters ◽  
Nitroso Group ◽  
Approximate Methods ◽  
Density Matrix Theory

Density matrix theory has been applied to study the barrier to internal rotation about the Ar-NO bond in N,N-dimethyl-p-nitrosoaniline and N,N-diethyl-p-nitrosoaniline. Theoretical fits to experimental n.m.r. spectra have been obtained in the range - 30°C to +40°C. Activation parameters have been determined and compared with those obtained by more approximate methods.

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