scholarly journals Short circuit detection and driving control with no blanking time for high voltage high power insulated gate bipolar transistors

2021 ◽  
Author(s):  
Xianjin Huang ◽  
Xin Li ◽  
Fengchuan Wang ◽  
Yixin Liu ◽  
Hu Sun
Keyword(s):  
High Voltage ◽  
High Power ◽  
Short Circuit ◽  
Bipolar Transistors ◽  
Insulated Gate Bipolar Transistors

Silicon direct bonding approach to high voltage power device (insulated gate bipolar transistors)

2001 ◽  
Author(s):  
Giho Cha ◽  
Youngchul Kim ◽  
Hyungwoo Jang ◽  
Hyunsoon Kang ◽  
Changsub Song
Keyword(s):  
High Voltage ◽  
Bipolar Transistors ◽  
Power Device ◽  
Insulated Gate Bipolar Transistors

Why There Is No IGBT Traction Rectifiers?

2014 ◽  
Author(s):  
Vitaly Gelman
Keyword(s):  
High Power ◽  
Power Converters ◽  
Reactive Power ◽  
Bipolar Transistors ◽  
Insulated Gate Bipolar Transistors ◽  
Pwm Rectifiers ◽  
Traction Power ◽  
Power Substations

The Insulated Gate Bipolar Transistors (IGBT) are widely used in high power converters. Definite advantages of IGBT rectifiers (also called PWM rectifiers) are: zero reactive power, low harmonics, and inherent power recuperation capability. However stationary traction rectifiers are built with either thyristors or diodes, not with IGBTs. The paper compares IGBT and thyristor rectifiers and analyzes the factors precluding the use of IGBT rectifiers at traction power substations.

High-power high-voltage bipolar transistors based on complex semiconductor structures

2001 ◽  
Vol 35 (2) ◽  
pp. 238-241
Author(s):  
M. Yu. Volokobinskii ◽  
I. N. Komarov ◽  
T. V. Matyukhina ◽  
V. I. Reshetnikov ◽  
A. A. Rush ◽  
...  
Keyword(s):  
High Voltage ◽  
High Power ◽  
Bipolar Transistors ◽  
Semiconductor Structures ◽  
Complex Semiconductor
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