Engineering in- and out-of-plane stress in PECVD silicon nitride for CMOS-compatible surface micromachining

2001 ◽  
Author(s):  
Rhodri R. Davies ◽  
Mark E. McNie ◽  
Kevin M. Brunson ◽  
David Combes
Keyword(s):  
Silicon Nitride ◽  
Plane Stress ◽  
Surface Micromachining ◽  
Out Of Plane ◽  
Cmos Compatible

Control of Stress in a Metal–Nitride–Metal Sandwich for CMOS-Compatible Surface Micromachining

2003 ◽  
Vol 782 ◽  
Author(s):  
Rhodri R. Davies ◽  
David J. Combes ◽  
Mark E. McNie ◽  
Kevin M Brunson
Keyword(s):  
Plane Stress ◽  
Stress Gradient ◽  
Nitride Layer ◽  
Surface Micromachining ◽  
Metal Nitride ◽  
Stress Components ◽  
Out Of Plane ◽  
Curvature Measurements ◽  
Cmos Compatible ◽  
Structural Layer

ABSTRACTFurther to previous work, which demonstrated the ability to engineer the in- and out-of-plane stress components in PECVD silicon nitride, this paper reports on the control of stress in a metal-nitride-metal sandwich. The addition of a symmetric metallisation to the core nitride layer provides additional functionality by enabling electrical connectivity and electrostatic transduction. This represents a widely applicable structural layer for CMOS-compatible surface micromachining.The use of advanced test structures coupled with wafer curvature measurements has allowed for detailed analysis of the stress components within the metal-nitride-metal sandwich and enables predictive engineering of the mechanical properties of the structural layer. Relationships between the in- and out-of-plane stress components of the metal-nitride-metal sandwich as a function of the nitride RF deposition power are reported and discussed. In comparison to values measured for nitride-only, a -30MPa/μm stress gradient offset is observed. A mechanism for the decrease in the stress gradient with the addition of the metallisation is proposed and compares well to modelling.The optimised metal-nitride-metal sandwich can be repeatably engineered to realise low tensile in-plane stress (100MPa) and low out-of-plane stress gradient (0 ± 10MPa/μm). The effective Young's Modulus of the metal-nitride-metal sandwich was determined to be 150GPa; and a value of 195GPa was calculated for the nitride layer using analytical modelling. Work to further reduce the in-plane stress whilst maintaining low stress gradient is in progress by independently tuning the strain of the metal layers.

Investigation of the impact of externally applied out-of-plane stress on Ferroelectric FET

2021 ◽  
pp. 1-1
Author(s):  
Yefan Liu ◽  
Sergiu Clima ◽  
Gaspard Hiblot ◽  
Philippe Matagne ◽  
Mihaela Loana Popovici ◽  
...  
Keyword(s):  
Plane Stress ◽  
Out Of Plane ◽  
The Impact

A Device for Evaluating the Multiaxial Finite Strain Thermomechanical Behavior of Elastomers and Soft Tissues

1999 ◽  
Vol 67 (3) ◽  
pp. 465-471 ◽  
Author(s):  
E. M. Ortt ◽  
D. J. Doss ◽  
E. Legall ◽  
N. T. Wright ◽  
J. D. Humphrey
Keyword(s):  
Thermal Diffusivity ◽  
Plane Stress ◽  
Finite Strain ◽  
Soft Tissues ◽  
Polymeric Materials ◽  
Thermomechanical Behavior ◽  
Finite Deformations ◽  
Out Of Plane ◽  
Computer Controlled ◽  
Stretch Response

Described here is the design and development of a computer-controlled device capable of measuring the finite strain thermomechanical behavior of a general class of polymeric materials including elastomers and biological soft tissues. The utility of this device for thermoelastic and thermophysical investigations is demonstrated by the measurement of the in-plane stress-stretch response and in-plane and out-of-plane components of thermal diffusivity of neoprene rubber undergoing finite deformations.[S0021-8936(00)01603-2]

scholarly journals Silicon nitride CMOS-compatible platform for integrated photonics applications at visible wavelengths

2013 ◽  
Vol 21 (12) ◽  
pp. 14036 ◽  
Author(s):  
Sebastian Romero-García ◽  
Florian Merget ◽  
Frank Zhong ◽  
Hod Finkelstein ◽  
Jeremy Witzens
Keyword(s):  
Silicon Nitride ◽  
Integrated Photonics ◽  
Cmos Compatible ◽  
Visible Wavelengths

Bistable out-of-plane stress-mismatched thermally actuated bilayer devices with large deflection

2011 ◽  
Vol 21 (6) ◽  
pp. 065030 ◽  
Author(s):  
B A Goessling ◽  
T M Lucas ◽  
E V Moiseeva ◽  
J W Aebersold ◽  
C K Harnett
Keyword(s):  
Plane Stress ◽  
Large Deflection ◽  
Out Of Plane ◽  
Thermally Actuated ◽  
Bilayer Devices

A Bistable Electromagnetic Actuated Microvalve With Integrated Switching Mechanism

Materials ◽  
2003 ◽  
Author(s):  
Jemmy Sutano Bintoro ◽  
Peter J. Hesketh
Keyword(s):  
Fabrication Method ◽  
Surface Micromachining ◽  
Switching Mechanism ◽  
Valve Structure ◽  
Closed Position ◽  
Cmos Compatible

This paper presents a new design and fabrication method for a bistable electromagnetic actuated microvalve. The complete magnetically close structure has been designed by ANSYS 5.7 [1] and was fabricated in 7 masks steps. The fabrication processes were entirely done by surface micromachining and electroplating on a single wafer with the maximum fabrication temperature of 300 °C, providing potentially a CMOS compatible process. The microvalve has additional feature called integrated switching mechanism used to detect the position of the membrane under fully open or closed position. The fabrication steps for the microvalve are different from previous work; the hole is etched through the back of wafer after the whole valve structure been built on the top of wafer. This provides the flexibility to fabricate an actuator first before finally producing a microvalve.

scholarly journals CMOS-compatible silicon nitride spectrometers for lab-on-a-chip spectral sensing

2016 ◽  
Author(s):  
Eva Ryckeboer ◽  
Xiaomin Nie ◽  
Ananth Z. Subramanian ◽  
Daan Martens ◽  
Peter Bienstman ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Lab On A Chip ◽  
Cmos Compatible ◽  
Spectral Sensing
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