A Bistable Electromagnetic Actuated Microvalve With Integrated Switching Mechanism

Materials ◽  
2003 ◽  
Author(s):  
Jemmy Sutano Bintoro ◽  
Peter J. Hesketh
Keyword(s):  
Fabrication Method ◽  
Surface Micromachining ◽  
Switching Mechanism ◽  
Valve Structure ◽  
Closed Position ◽  
Cmos Compatible

This paper presents a new design and fabrication method for a bistable electromagnetic actuated microvalve. The complete magnetically close structure has been designed by ANSYS 5.7 [1] and was fabricated in 7 masks steps. The fabrication processes were entirely done by surface micromachining and electroplating on a single wafer with the maximum fabrication temperature of 300 °C, providing potentially a CMOS compatible process. The microvalve has additional feature called integrated switching mechanism used to detect the position of the membrane under fully open or closed position. The fabrication steps for the microvalve are different from previous work; the hole is etched through the back of wafer after the whole valve structure been built on the top of wafer. This provides the flexibility to fabricate an actuator first before finally producing a microvalve.

A Structure of Bistable Electromagnetic Actuated Microvalve Fabricated on a Single Wafer, Implementing the SLA and PDMS Technique

2003 ◽  
Author(s):  
Jemmy Sutanto Bintoro ◽  
Rajesh Luharuka ◽  
Edward W. Wong ◽  
Peter J. Hesketh
Keyword(s):  
Power Generation ◽  
Fuel Cell ◽  
Delivery System ◽  
Processing Temperature ◽  
Surface Micromachining ◽  
Fuel Delivery ◽  
Valve Assembly ◽  
Cmos Compatible

This report presents a complete package for bistable electromagnetic actuated microvalve. The function of the valve is to control the fuel delivery system in a fuel cell unit for power generation [1,2]. The microvalves were fabricated on top of a single wafer using 8 masking steps. The fabrication processes have a maximum processing temperature of 300 °C, providing potentially a CMOS compatible process. The valve arrays that compromise of 12 valves per 12 MM × 12 MM chip are built completely by surface micromachining. The chip is assembled into a package with fluidic connection parts. The parts were made from the stereo lithography (SLA) frame that was filled with PDMS. The PDMS also acts as a gasket to seal the microvalve from leaking. The fluidic tests show that the whole valve assembly can stand from leaks up to the pressure of 57.4 kPa.

CMOS- compatible fabrication method of graphene-based micro devices

2017 ◽  
Vol 67 ◽  
pp. 92-97 ◽  
Author(s):  
W. Koczorowski ◽  
P. Kuświk ◽  
M. Przychodnia ◽  
K. Wiesner ◽  
S. El-Ahmar ◽  
...  
Keyword(s):  
Fabrication Method ◽  
Cmos Compatible

A study of the switching mechanism and electrode material of fully CMOS compatible tungsten oxide ReRAM

2011 ◽  
Vol 102 (4) ◽  
pp. 901-907 ◽  
Author(s):  
W. C. Chien ◽  
Y. C. Chen ◽  
E. K. Lai ◽  
F. M. Lee ◽  
Y. Y. Lin ◽  
...  
Keyword(s):  
Tungsten Oxide ◽  
Electrode Material ◽  
Switching Mechanism ◽  
Cmos Compatible

Control of Stress in a Metal–Nitride–Metal Sandwich for CMOS-Compatible Surface Micromachining

2003 ◽  
Vol 782 ◽  
Author(s):  
Rhodri R. Davies ◽  
David J. Combes ◽  
Mark E. McNie ◽  
Kevin M Brunson
Keyword(s):  
Plane Stress ◽  
Stress Gradient ◽  
Nitride Layer ◽  
Surface Micromachining ◽  
Metal Nitride ◽  
Stress Components ◽  
Out Of Plane ◽  
Curvature Measurements ◽  
Cmos Compatible ◽  
Structural Layer

ABSTRACTFurther to previous work, which demonstrated the ability to engineer the in- and out-of-plane stress components in PECVD silicon nitride, this paper reports on the control of stress in a metal-nitride-metal sandwich. The addition of a symmetric metallisation to the core nitride layer provides additional functionality by enabling electrical connectivity and electrostatic transduction. This represents a widely applicable structural layer for CMOS-compatible surface micromachining.The use of advanced test structures coupled with wafer curvature measurements has allowed for detailed analysis of the stress components within the metal-nitride-metal sandwich and enables predictive engineering of the mechanical properties of the structural layer. Relationships between the in- and out-of-plane stress components of the metal-nitride-metal sandwich as a function of the nitride RF deposition power are reported and discussed. In comparison to values measured for nitride-only, a -30MPa/μm stress gradient offset is observed. A mechanism for the decrease in the stress gradient with the addition of the metallisation is proposed and compares well to modelling.The optimised metal-nitride-metal sandwich can be repeatably engineered to realise low tensile in-plane stress (100MPa) and low out-of-plane stress gradient (0 ± 10MPa/μm). The effective Young's Modulus of the metal-nitride-metal sandwich was determined to be 150GPa; and a value of 195GPa was calculated for the nitride layer using analytical modelling. Work to further reduce the in-plane stress whilst maintaining low stress gradient is in progress by independently tuning the strain of the metal layers.

In-Plane High-Sensitivity Capacitive Accelerometer in a 3-D CMOS-Compatible Surface Micromachining Process

2019 ◽  
Vol 28 (1) ◽  
pp. 14-24
Author(s):  
Ahmad Alfaifi ◽  
Ibrahim A. Alhomoudi ◽  
Frederic Nabki ◽  
Mourad N. El-Gamal
Keyword(s):  
High Sensitivity ◽  
Surface Micromachining ◽  
Capacitive Accelerometer ◽  
Cmos Compatible
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