Combined metrology including VUV spectroscopic ellipsometry and grazing x-ray reflectance for precise characterization of thin films and multilayers at 157 nm

2001 ◽  
Author(s):  
Pierre Boher ◽  
Patrick Evrard ◽  
Jean-Philippe Piel ◽  
Sylvie Janicot ◽  
Jean-Louis P. Stehle
Keyword(s):  
Thin Films ◽  
Spectroscopic Ellipsometry ◽  
X Ray ◽  
Precise Characterization

Precise characterization of ultrathin nitride/oxide gate dielectrics by grazing x-ray reflectance and spectroscopic ellipsometry

1999 ◽  
Vol 592 ◽  
Author(s):  
Pierre Boher ◽  
Jean Philippe Piel ◽  
Jean Louis Stehle
Keyword(s):  
Integrated Circuits ◽  
Spectroscopic Ellipsometry ◽  
Gate Dielectrics ◽  
Structural Models ◽  
Visible Range ◽  
X Ray ◽  
Precise Characterization ◽  
Deep Uv ◽  
Nitride Oxide

ABSTRACTPrecise characterization of nitride/oxide gate structures becomes a challenging task due to the very thin thickness (<3-4nm), which will be needed in the next generation integrated circuits. Conventional techniques such as spectroscopic ellipsometry in the visible range becomes difficult to apply because of the great correlation between thickness and optical indices. To overcome this problem the following strategy is applied. First, grazing x-ray reflectance is used on all the samples to extract the different layer thicknesses using a simple model. Second, spectroscopi ellipsometry from deep UV 190nm to 850nm is applied and the results fitted with the structural models deduced from the x-ray results. In this conditions the nitrogen content of the films can be precisely determined. This kind of analysis has been made on a series of nitride/oxide gate structures with variable thicknesses and degree of nitridation. Regression results are discussed and compared to x-ray photoemission results obtained on the same samples.

Characterization of excimer laser annealed polycrystalline Si1−xGex alloy thin films by x-ray diffraction and spectroscopic ellipsometry

1998 ◽  
Vol 83 (1) ◽  
pp. 174-180 ◽  
Author(s):  
Guolin Yu ◽  
Kalaga Murali Krishna ◽  
Chunlin Shao ◽  
Masayoshi Umeno ◽  
Tetsuo Soga ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Spectroscopic Ellipsometry ◽  
X Ray Diffraction ◽  
X Ray

Precise Characterization of Resists and Thin Gate Dielectrics in the VUV Range for 157nm Lithography

2000 ◽  
Vol 636 ◽  
Author(s):  
Pierre Boher ◽  
Patrick Evrard ◽  
Jean Philippe Piel ◽  
Christophe Defranoux ◽  
Jean Louis Stehlé
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Spectroscopic Ellipsometry ◽  
Water Contamination ◽  
Gate Dielectrics ◽  
Wavelength Region ◽  
Interface Diffusion ◽  
X Ray ◽  
Precise Characterization

AbstractSpectroscopic ellipsometry is one of the most important tools for thin film metrology. It is now intensively used in microelectronics and especially for the microlithographic applications. Instrumentation for the next generation of VUV lithography at 157nm requires special optical setup since oxygen and water are extremely absorbing below 190nm. Recently a new ellipsometer included in a purged glove box to reduce the oxygen and water contamination in the part per million range has been developed. In the VUV range, roughness and interface diffusion become critical since the layer thickness is generally reduced. An independent characterization technique like the grazing x-ray reflectance is then extremely complementary to ellipsometry in this wavelength region. The present paper presents recent results on up to date lithography samples combining the two characterization techniques. Photoresists and gate dielectrics are successively examined.

Structural characterization of different insulating films by spectroscopic ellipsometry and grazing x‐ray reflectance

1996 ◽  
Vol 446 ◽  
Author(s):  
P. Boher ◽  
J.L. Stehle ◽  
L. Hennet
Keyword(s):  
Thin Films ◽  
Spectroscopic Ellipsometry ◽  
Infrared Range ◽  
Antireflective Coatings ◽  
X Ray ◽  
Optical Index ◽  
Insulating Films ◽  
Dispersion Law ◽  
Entire Wavelength Range

AbstractSpectroscopic Ellipsometry (SE) and Grazing X‐ray Reflectance (GXR) techniques are applied for different insulating films to determine precisely the thickness and optical indices of the layers. Antireflective coatings for microlithography in the DUV range are first analyzed. In the infrared range the layers are transparent and one can take into account the optical index of the layers by a simple dispersion law. Thicknesses obtained by this method are checked by the GXR technique. Extraction of the optical indices from UV to IR is made very accurately taking into account different SE measurements at various incident angles simultaneously. Amorphous carbon thin films are also analyzed in the same way. The main difference is that the layer is absorbant in the entire wavelength range. In this case, a first characterization by the GXR technique is essential to extract the thickness of the layer. Then the optical indices of the layer can be extracted very accurately by SE.

The Growth and Characterization of Germanium-Carbon Alloy Thin Films

1992 ◽  
Vol 270 ◽  
Author(s):  
Haojie Yuan ◽  
R. Stanley Williams
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Vacuum Chamber ◽  
Optical Band Gap ◽  
High Vacuum ◽  
Optical Absorption Spectroscopy ◽  
Alloy Thin Film ◽  
New Materials ◽  
X Ray

ABSTRACTThin films of pure germanium-carbon alloys (GexC1−x with x ≈ 0.0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) have been grown on Si(100) and A12O3 (0001) substrates by pulsed laser ablation in a high vacuum chamber. The films were analyzed by x-ray θ-2θ diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), conductivity measurements and optical absorption spectroscopy. The analyses of these new materials showed that films of all compositions were amorphous, free of contamination and uniform in composition. By changing the film composition, the optical band gap of these semiconducting films was varied from 0.00eV to 0.85eV for x = 0.0 to 1.0 respectively. According to the AES results, the carbon atoms in the Ge-C alloy thin film samples has a bonding configuration that is a mixture of sp2 and sp3 hybridizations.

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