Characterization of excimer laser annealed polycrystalline Si1−xGex alloy thin films by x-ray diffraction and spectroscopic ellipsometry

1998 ◽  
Vol 83 (1) ◽  
pp. 174-180 ◽  
Author(s):  
Guolin Yu ◽  
Kalaga Murali Krishna ◽  
Chunlin Shao ◽  
Masayoshi Umeno ◽  
Tetsuo Soga ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Spectroscopic Ellipsometry ◽  
X Ray Diffraction ◽  
X Ray

Characterization of Laser-Assisted Pulseid Laser Deiposited BaFe12O19

1992 ◽  
Vol 285 ◽  
Author(s):  
J.S. Horwitz ◽  
D.B. Chrisey ◽  
K.S. Grabowski ◽  
C.A. Carosella ◽  
P. Lubitz ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Excimer Laser ◽  
Thick Films ◽  
Barium Hexaferrite ◽  
X Ray Diffraction ◽  
X Ray ◽  
Substrate Processing ◽  
Substrate Temperatures

ABSTRACTHigh quality, epitaxial barium hexaferrite (BaFe12O19) thin films have been deposited by pulsed laser deposition (PLD) onto basal plane sapphire at substrate temperatures of 900°C in 400 mTorr of oxygen. Thin films (< 500 nm) were smooth while thick films (> 1000 nm) had rough, polycrystalline surfaces and “soot-like” appearances. The integration of ferrite films with semiconductors will require thick films (< 70 μm) and low substrate processing temperatures (≤ 600°C). Films deposited at 600°C were mostly amorphous with the presence of some crystalline, non-hexaferrite material. In an effort to improve the quality of barium hexaferrite fihns, we have investigated the effects of excimer-laser-assisted PLD (LAPLD) on the growth of BaFe12O19. During the deposition, the substrate was illuminated with the output of a second pulsed excimer laser (KrF) weakly focused to an energy of 10 to 130 mJ/cm2. The output of the second laser was synchronized such that the delay between the vaporization laser and the annealing laser was 0 to 1 ms. The X-ray diffraction analysis of LAPLD films deposited at 600°C with an annealing fluence of 50 mJ/cm2 indicated that the films were a crystalline mixture of hexaferrite and non-hexaferrite phases. Both phases exhibited a preferred orientation characterized by narrow x-ray rocking curve widths (FWHM ∼ 1°). Magnetic properties (magnetic moment, saturation magnetization and coercive field) detennined from a vibrating sample magnetometer (VSM) also confirmed the presence of oriented hexaferrite material in the laser annealed samples. These results show clear advantages of LAPLD for improved structural and magnetic properties of BaFe12O19 deposited at substrate temperatures compatible with semiconducting materials.

Structural and Optical Characterization of Zinc Telluride Thin Films

2013 ◽  
Vol 665 ◽  
pp. 254-262 ◽  
Author(s):  
J.R. Rathod ◽  
Haresh S. Patel ◽  
K.D. Patel ◽  
V.M. Pathak
Keyword(s):  
Thin Films ◽  
Extinction Coefficient ◽  
Nir Spectroscopy ◽  
Optical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Evaporation Technique ◽  
Film Form ◽  
Znte Thin Films

Group II-VI compounds have been investigated largely in last two decades due to their interesting optoelectronic properties. ZnTe, a member of this family, possesses a bandgap around 2.26eV. This material is now a day investigated in thin film form due to its potential towards various viable applications. In this paper, the authors report their investigations on the preparation of ZnTe thin films using vacuum evaporation technique and their structural and optical characterizations. The structural characterization, carried out using an X-ray diffraction (XRD) technique shows that ZnTe used in present case possesses a cubic structure. Using the same data, the micro strain and dislocation density were evaluated and found to be around 1.465×10-3lines-m2and 1.639×1015lines/m2respecctively. The optical characterization carried out in UV-VIS-NIR region reveals the fact that band gap of ZnTe is around 2.2eV in present case. In addition to this, it was observed that the value of bandgap decreases as the thickness of films increases. The direct transitions of the carries are involved in ZnTe. Using the data of UV-VIS-NIR spectroscopy, the transmission coefficient and extinction coefficient were also calculated for ZnTe thin films. Besides, the variation of extinction coefficient with wavelength has also been discussed here.

scholarly journals Characterization of superconducting oxide thin films by X-ray diffraction.

1990 ◽  
Vol 37 (1) ◽  
pp. 141-144
Author(s):  
Tsunekazu Iwata ◽  
Akihiko Yamaji ◽  
Youichi Enomoto
Keyword(s):  
Thin Films ◽  
X Ray Diffraction ◽  
Oxide Thin Films ◽  
X Ray

Application of Aluminum Nitride Thin Film for Micromachined Ultrasonic Transducers

2005 ◽  
Vol 892 ◽  
Author(s):  
Qianghua Wang ◽  
Jianzeng Xu ◽  
Changhe Huang ◽  
Gregory W Auner
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Ultrasonic Transducers ◽  
X Ray Diffraction ◽  
Effective Coupling ◽  
Resonant Frequencies ◽  
X Ray ◽  
Coupling Factors ◽  
Sandwiched Structure

AbstractThis paper reports the fabrication and characterization of micromachined ultrasonic transducers (MUT) based on piezoelectric aluminum nitride (AlN) thin films. The MUT device is composed of an Al/AlN/Al sandwiched structure overlaid on top of a silicon (Si) diaphragm. X-ray diffraction (XRD) scan shows that highly c-axis oriented AlN (002) thin films have been grown on Al/Si(100) substrates. Electrical impedance of the MUT devices is analyzed as a function of frequency. The fundamental resonant frequencies of the devices are found in the range of 65-70 kHz, which are in approximation to the theoretical calculation. The effective coupling factors of the devices are also derived as 0.18.

X-ray Diffraction Studies of Polycrystalline Thin Films Using Glancing Angle Diffractometry

1988 ◽  
Vol 32 ◽  
pp. 311-321 ◽  
Author(s):  
R.A. Larsen ◽  
T.F. McNulty ◽  
R.P. Goehner ◽  
K.R. Crystal
Keyword(s):  
Thin Films ◽  
Deep Penetration ◽  
X Ray Diffraction ◽  
Parallel Beam ◽  
X Ray ◽  
Beam Geometry ◽  
Polycrystalline Thin Films ◽  
Glancing Angle ◽  
Parallel Beam Geometry

AbstractThe use of conventional θ/2θ diffraction methods for the characterization of polycrystalline thin films is not in general a satisfactory technique due to the relatively deep penetration of x-ray photons in most materials. Glancing incidence diffraction (GID) can compensate for the penetration problems inherent in the θ/2θ geometry. Parallel beam geometry has been developed in conjunction with GID to eliminate the focusing aberrations encountered when performing these types of measurements. During the past yearwe developed a parallel beam attachment which we have successfully configured to a number of systems.

Formation and Characterization of the Quasicrystal Films

2007 ◽  
Vol 546-549 ◽  
pp. 1699-1702
Author(s):  
Xi Ying Zhou ◽  
Liang He ◽  
Yan Hui Liu
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Electric Current ◽  
Wear Behavior ◽  
Micro Hardness ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scanning Electron

Al-Cu-Fe quasicrystals powder was used to prepare the thin films on the surface of the A3 steel by the means of DMD-450 vacuum evaporation equipment. The thin films with different characterization were obtained through different parameters. The microstructures of the thin films were analyzed by Scanning Electron Microscopy (SEM) and X-ray Diffraction (XRD). Additionally, the nano-hardness and the modulus of the films are tested by MTS and Neophot micro-hardness meter. The results showed that the modulus of the films was about 160GPa. Nano hardness of the films was about 7.5 Gpa. The films consisted of CuAl2, AlCu3. The thickness and the micro-hardness of the films are improved. In same way, with the increase of the electric current, the thickness and the hardness of the films are also improved. Along with increase of the time and the electric current, the wear behavior of the films was improved. To some extent, the microstructure of films contained the quasicrystal phase of Al65Cu20Fe15.

scholarly journals Synchrotron X-ray diffraction characterization of the inheritance of GaN homoepitaxial thin films grown on selective growth substrates

CrystEngComm ◽  
2018 ◽  
Vol 20 (20) ◽  
pp. 2861-2867 ◽  
Author(s):  
Yanfang Lou ◽  
Chulho Song ◽  
Yanna Chen ◽  
Loku Singgappulige Rosantha Kumara ◽  
Natalia Palina ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Characteristics ◽  
Selective Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Growth Substrates

The structural characteristics of a selective growth GaN substrate were inherited from an Al2O3 substrate and then transferred to homoepitaxial thin films.

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