Optimization of the barrier height in 1.3-μm InGaAsP multiple-quantum-well active regions for high-temperature operation
Keyword(s):
2000 ◽
Vol 12
(2)
◽
pp. 137-139
◽
Keyword(s):
1999 ◽
Vol 14
(12)
◽
pp. 1069-1075
◽
Keyword(s):
Keyword(s):
Keyword(s):