High power and high‐temperature operation of GaInP/AlGaInP strained multiple quantum well lasers

1993 ◽  
Vol 62 (11) ◽  
pp. 1173-1175 ◽  
Author(s):  
M. Mannoh ◽  
J. Hoshina ◽  
S. Kamiyama ◽  
H. Ohta ◽  
Y. Ban ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
High Power ◽  
Multiple Quantum Well ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
High Temperature Operation

High-power and high-temperature operation of InGaAsP/InP multiple quantum well lasers

1999 ◽  
Vol 14 (12) ◽  
pp. 1069-1075 ◽  
Author(s):  
L V Asryan ◽  
N A Gun'ko ◽  
A S Polkovnikov ◽  
R A Suris ◽  
G G Zegrya ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
High Power ◽  
Multiple Quantum Well ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
High Temperature Operation

1.3 μm InAsP compressively strained multiple‐quantum‐well lasers for high‐temperature operation

1995 ◽  
Vol 77 (8) ◽  
pp. 4119-4121 ◽  
Author(s):  
H. Oohashi ◽  
T. Hirono ◽  
S. Seki ◽  
H. Sugiura ◽  
J. Nakano ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
High Temperature Operation

High-temperature operation of 1.3 [micro sign]m AlGaInAs strained multiple quantum well lasers

1998 ◽  
Vol 34 (12) ◽  
pp. 1231 ◽  
Author(s):  
K. Takemasa ◽  
T. Munakata ◽  
M. Kobayashi ◽  
H. Wada ◽  
T. Kamijoh
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
High Temperature Operation
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