Platinum silicide formation during pulsed laser annealing prepared by pulsed laser deposition

2000 ◽  
Author(s):  
Meicheng Li ◽  
Xuekang Chen ◽  
Jing Wang ◽  
Jianping Yang ◽  
Gan Wu ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Silicide Formation ◽  
Platinum Silicide ◽  
Pulsed Laser Annealing

Preparation of platinum silicide films by pulsed laser deposition and pulsed laser annealing

2001 ◽  
Vol 72 (1) ◽  
pp. 85-87 ◽  
Author(s):  
Mei Cheng Li ◽  
Xuekang Chen ◽  
Wei Cai ◽  
Jinghua Yin ◽  
Jianping Yang ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Platinum Silicide ◽  
Pulsed Laser Annealing

Pulsed Laser Deposition of Boron Doped Si70Ge30

2006 ◽  
Vol 910 ◽  
Author(s):  
Sherif Sedky ◽  
Ibrahim ElDeftar ◽  
Omar Mortagy
Keyword(s):  
Pulsed Laser Deposition ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Thermal Impact ◽  
Post Processing ◽  
Good Adhesion ◽  
Pulsed Laser Annealing ◽  
Boron Doped ◽  
P Type

AbstractThe main objective of this work is to investigate the possibility of combining pulsed laser deposition (PLD) and pulsed laser annealing to realize p-type Si1-xGex thin films suitable for post-processing MEMS on top of standard pre-fabricated driving electronics. The main advantage of this approach is that the substrate is kept at a CMOS backend compatible temperature throughout the deposition and thus the MEMS integration process will have no thermal impact on the underlying electronics. In addition, it is demonstrated that PLD Si1-xGex has good adhesion to SiO2 and accordingly there is no need for a silicon nucleation which is the case for LPCVD and PECVD. Furthermore, this technique is much more economical than CVD as it does don't imply using expensive gas precursors such as germane and silane.

The effect of pulsed laser annealing on the nickel silicide formation

2010 ◽  
Vol 87 (12) ◽  
pp. 2540-2543 ◽  
Author(s):  
Hou-Yu Chen ◽  
Chia-Yi Lin ◽  
Chien-Chao Huang ◽  
Chao-Hsin Chien
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Nickel Silicide ◽  
Silicide Formation ◽  
Pulsed Laser Annealing

Nickel Silicide Formation using Pulsed Laser Annealing for nMOSFET Performance Improvement

2011 ◽  
Vol 158 (8) ◽  
pp. H840 ◽  
Author(s):  
Hou-Yu Chen ◽  
Chia-Yi Lin ◽  
Min-Cheng Chen ◽  
Chien-Chao Huang ◽  
Chao-Hsin Chien
Keyword(s):  
Performance Improvement ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Nickel Silicide ◽  
Silicide Formation ◽  
Pulsed Laser Annealing

Laser annealing of silicon nanocrystal films formed by pulsed-laser deposition

2004 ◽  
Vol 16 (1) ◽  
pp. 40-45 ◽  
Author(s):  
C. F. Tan ◽  
X. Y. Chen ◽  
Y. F. Lu ◽  
Y. H. Wu ◽  
B. J. Cho ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Silicon Nanocrystal ◽  
Nanocrystal Films
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