Laser annealing of silicon nanocrystal films prepared by pulsed-laser deposition

2004 ◽  
Vol 22 (4) ◽  
pp. 1731 ◽  
Author(s):  
X. Y. Chen ◽  
Y. F. Lu ◽  
Y. H. Wu ◽  
B. J. Cho ◽  
B. J. Yang ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Silicon Nanocrystal ◽  
Nanocrystal Films

Laser annealing of silicon nanocrystal films formed by pulsed-laser deposition

2004 ◽  
Vol 16 (1) ◽  
pp. 40-45 ◽  
Author(s):  
C. F. Tan ◽  
X. Y. Chen ◽  
Y. F. Lu ◽  
Y. H. Wu ◽  
B. J. Cho ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Silicon Nanocrystal ◽  
Nanocrystal Films

Pulsed Laser Deposition of Boron Doped Si70Ge30

2006 ◽  
Vol 910 ◽  
Author(s):  
Sherif Sedky ◽  
Ibrahim ElDeftar ◽  
Omar Mortagy
Keyword(s):  
Pulsed Laser Deposition ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Thermal Impact ◽  
Post Processing ◽  
Good Adhesion ◽  
Pulsed Laser Annealing ◽  
Boron Doped ◽  
P Type

AbstractThe main objective of this work is to investigate the possibility of combining pulsed laser deposition (PLD) and pulsed laser annealing to realize p-type Si1-xGex thin films suitable for post-processing MEMS on top of standard pre-fabricated driving electronics. The main advantage of this approach is that the substrate is kept at a CMOS backend compatible temperature throughout the deposition and thus the MEMS integration process will have no thermal impact on the underlying electronics. In addition, it is demonstrated that PLD Si1-xGex has good adhesion to SiO2 and accordingly there is no need for a silicon nucleation which is the case for LPCVD and PECVD. Furthermore, this technique is much more economical than CVD as it does don't imply using expensive gas precursors such as germane and silane.

Characterization of (Bi0.25Sb0.75)2Te3 Deposited by Pulsed Laser Deposition

2008 ◽  
Author(s):  
Ahmed Kamal ◽  
Hassan Abu Bakr ◽  
Ziyang Wang ◽  
H. El Samman ◽  
Paolo Fiorini ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Pulsed Laser Deposition ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Background Gas

The main objective of this work is to investigate the possibility of preparing bismuth telluride thin films using pulsed laser deposition. The effect of varying the deposition pressure, laser fluence, and the deposition temperature on the surface roughness, film composition, grain microstructure and electrical resistivity is analyzed using, scanning electron microscopy, atomic force microscopy, X-ray fluorescence, transmission electron microscopy, and four point probe measurements. It is demonstrated that relatively smooth films can be deposited at a laser flounce of 0.6 J/cm2 and using argon as a background gas at 10−1 mbar. On the other hand, resistivities as low as 2 mΩ.cm can be obtained by either depositing the film at 200°C, or by post-laser annealing films deposited at room temperature.

Preparation of platinum silicide films by pulsed laser deposition and pulsed laser annealing

2001 ◽  
Vol 72 (1) ◽  
pp. 85-87 ◽  
Author(s):  
Mei Cheng Li ◽  
Xuekang Chen ◽  
Wei Cai ◽  
Jinghua Yin ◽  
Jianping Yang ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Platinum Silicide ◽  
Pulsed Laser Annealing

Silicon Nanostructured Films Formed by Pulsed-Laser Deposition in Inert Gas and Reactive Gas

2003 ◽  
Vol 762 ◽  
Author(s):  
X. Y. Chen ◽  
Y.F. Lu ◽  
Y. H. Wu ◽  
B.J. Cho ◽  
H. Hu Laser
Keyword(s):  
Pulsed Laser Deposition ◽  
Laser Fluence ◽  
Laser Annealing ◽  
Quantum Confinement Effect ◽  
Pulsed Laser ◽  
Surface States ◽  
Film Structure ◽  
Gas Pressure ◽  
Laser Deposition ◽  
Nanostructured Films

AbstractWe reported Si nanostructured films formed by pulsed-laser deposition (PLD) in both inert Ar gas and reactive O2 gas. The as-deposited nanostructured films with visible photoluminescence (PL) show a transition from a film structure to a porous cauliflowerlike structure, as the ambient gas pressure increases from 1 mTorr to 1 Torr. The film consists of small crystals with size from 1 to 20 nm. The oxygen composition of SiOx increases with increasing O2 gas pressure, while Si 2p peak of the Si dioxide also becomes dominate. At 100 mTorr O2 gas, almost complete SiO2 structure is formed. The PL at 1.8–2.1 eV is attributed to the quantum confinement effect (QCE) in Si nanocrystal core, while the PL band at 2.55 eV can be explained by the light emission from the localized surface states at SiOx/Si interface. Laser annealing was applied to the as-deposited nanostructured films. The PL intensities are increased by about two to three times of magnitude after annealing. High laser fluence causes damages in the films and optimal laser fluence exists before film damages or laser ablation occur.

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