scholarly journals Laser-induced particle removal from silicon wafers

2000 ◽  
Author(s):  
Paul Leiderer
Keyword(s):  
Silicon Wafers ◽  
Particle Removal

Ultrasonic and Hydrodynamic Techniques for Particle Removal from Silicon Wafers

1989 ◽  
pp. 297-306 ◽  
Author(s):  
V. B. Menon ◽  
L. D. Michaels ◽  
R. P. Donovan ◽  
D. S. Ensor
Keyword(s):  
Silicon Wafers ◽  
Particle Removal

Particle Removal Efficiency and Damage Analysis on Silicon Wafers after Megasonic Cleaning in Solvents

2009 ◽  
Vol 23 (12) ◽  
pp. 1709-1721 ◽  
Author(s):  
Francesca Barbagini ◽  
Sandip Halder ◽  
Tom Janssens ◽  
Karine Kenis ◽  
Kurt Wostyn ◽  
...  
Keyword(s):  
Removal Efficiency ◽  
Silicon Wafers ◽  
Damage Analysis ◽  
Particle Removal ◽  
Megasonic Cleaning

A Model for the Etching of Ti and Tin in SC-1 Solutions

1997 ◽  
Vol 477 ◽  
Author(s):  
Steven Verhaverbeke ◽  
Jennifer W. Parker
Keyword(s):  
Hydrogen Peroxide ◽  
Ammonium Hydroxide ◽  
Quantitative Model ◽  
Silicon Wafers ◽  
Particle Removal ◽  
Chemical Mixture

ABSTRACTThe Standard Clean 1 (SC-1), developed by W. Kern and D. Puotinen in 1965 and disclosed in 1970 [1], consists of a mixture of ammonium-hydroxide, hydrogen-peroxide, and water. (SC-1 is also called the Airfmonium-Hydroxide Peroxide Mixture or APM). Originally, this chemical mixture was developed for cleaning silicon wafers and it has proven to be the most efficient particle removing agent found to date. SC-1 can, however, also be used for etching. SC-1 will etch the following materials: SiO2, Si3N4, Si, Ti and TiN. On top of this, SC-1 will grow an oxide on several materials (i.e., bare silicon).In this paper, a quantitative model for the SC-1 solution is presented. The etching of Ti and TiN is shown to be fundamentally different from the etching of SiO2. The mixture of Ammonium-hydroxide and Hydrogen Peroxide must be optimized differently for Ti and TiN etching than for the particle removal from Silicon wafers.

Particulate Removal from Silicon Substrates in Megasonic-Assisted Dilute SC1 Chemistry

1997 ◽  
Vol 477 ◽  
Author(s):  
Ismail Kashkoush ◽  
Eric Brause ◽  
Robert Grant ◽  
Rich Novak
Keyword(s):  
Real World ◽  
Lower Cost ◽  
Bath Temperature ◽  
Silicon Wafers ◽  
Silicon Substrates ◽  
Particle Removal ◽  
Dilute Solutions ◽  
Cost Of Ownership ◽  
Particulate Removal ◽  
Removal System

ABSTRACTThis paper demonstrates the use of megasonic energy to enhance particulate removal in dilute SC1 solutions. Ideal, as well as “real world”, particles were deposited on silicon wafers to challenge the SCl/megasonic particle removal system. Different dilute SCI concentrations were used, e.g., 1:4:20, 1:10:120, and 1:1:100. Bath temperature was varied between 50 and 70°C with megasonic energy kept constant at 800 W. Results showed that the megasonic energy enhanced the particle removal even in dilute solutions. The chemical concentrations were shown to be a significant factor and must be monitored or controlled in dilute SC1 solutions for particle removal to take place. A lower cost of ownership can be obtained from these techniques as a result of using dilute chemicals and extending current bath lives.

The E-ring: interactions with plasma and implications for its evolution

1984 ◽  
Vol 75 ◽  
pp. 599-602
Author(s):  
T.V. Johnson ◽  
G.E. Morfill ◽  
E. Grun
Keyword(s):  
Time Scale ◽  
Particle Density ◽  
High Energy ◽  
Particle Removal ◽  
Density Region ◽  
Drag Forces ◽  
Orbit Evolution ◽  
History Of ◽  
Ring Particle ◽  
Ring Material

A number of lines of evidence suggest that the particles making up the E-ring are small, on the order of a few microns or less in size (Terrile and Tokunaga, 1980, BAAS; Pang et al., 1982 Saturn meeting; Tucson, AZ). This suggests that a variety of electromagnetic and plasma affects may be important in considering the history of such particles. We have shown (Morfill et al., 1982, J. Geophys. Res., in press) that plasma drags forces from the corotating plasma will rapidly evolve E-ring particle orbits to increasing distance from Saturn until a point is reached where radiation drag forces acting to decrease orbital radius balance this outward acceleration. This occurs at approximately Rhea's orbit, although the exact value is subject to many uncertainties. The time scale for plasma drag to move particles from Enceladus' orbit to the outer E-ring is ~104yr. A variety of effects also act to remove particles, primarily sputtering by both high energy charged particles (Cheng et al., 1982, J. Geophys. Res., in press) and corotating plasma (Morfill et al., 1982). The time scale for sputtering away one micron particles is also short, 102 - 10 yrs. Thus the detailed particle density profile in the E-ring is set by a competition between orbit evolution and particle removal. The high density region near Enceladus' orbit may result from the sputtering yeild of corotating ions being less than unity at this radius (e.g. Eviatar et al., 1982, Saturn meeting). In any case, an active source of E-ring material is required if the feature is not very ephemeral - Enceladus itself, with its geologically recent surface, appears still to be the best candidate for the ultimate source of E-ring material.

Arsenic segregation in polysilicon

1983 ◽  
Vol 41 ◽  
pp. 154-155 ◽  
Author(s):  
P.E. Batson ◽  
C.R.M. Grovenor ◽  
D.A. Smith ◽  
C. Wong
Keyword(s):  
Incident Beam ◽  
Silicon Wafers ◽  
Chemical Polishing ◽  
Bright Field Image ◽  
Beam Size ◽  
Stem Analysis ◽  
Bright Field ◽  
Twin Boundaries ◽  
X Ray ◽  
Line Scan

In this work As doped polysilicon was deposited onto (100) silicon wafers by APCVD at 660°C from a silane-arsine mixture, followed by a ten minute anneal at 1000°C, and in one case a further ten minute anneal at 700°C. Specimens for TEM and STEM analysis were prepared by chemical polishing. The microstructure, which is unchanged by the final 700°C anneal,is shown in Figure 1. It consists of numerous randomly oriented grains many of which contain twins.X-ray analysis was carried out in a VG HB5 STEM. As K α x-ray counts were collected from STEM scans across grain and twin boundaries, Figures 2-4. The incident beam size was about 1.5nm in diameter, and each of the 20 channels in the plots was sampled from a 1.6nm length of the approximately 30nm line scan across the boundary. The bright field image profile along the scanned line was monitored during the analysis to allow correlation between the image and the x-ray signal.

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

Low temperature drive-in of surface-deposited copper in silicon wafers

2004 ◽  
Vol 27 (1-3) ◽  
pp. 435-438 ◽  
Author(s):  
M. L. Polignano ◽  
D. Caputo ◽  
C. Carpanese ◽  
G. Salvà ◽  
L. Vanzetti
Keyword(s):  
Low Temperature ◽  
Silicon Wafers

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Single Crystalline Silicon ◽  
Near Surface ◽  
Single Crystalline
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