InGaAsBi alloys on InP for efficient near- and mid-infrared light emitting devices

2013 ◽  
Vol 114 (21) ◽  
pp. 213103 ◽  
Author(s):  
Shirong Jin ◽  
Stephen John Sweeney
Keyword(s):  
Infrared Light ◽  
Mid Infrared ◽  
Light Emitting ◽  
Light Emitting Devices

Design and operation of mid-infrared light-emitting devices (lambdaapprox11 µm) based on a chirped superlattice

2000 ◽  
Vol 15 (1) ◽  
pp. 44-50 ◽  
Author(s):  
H Page ◽  
C Sirtori ◽  
S Barbieri ◽  
P Kruck ◽  
M Stellmacher ◽  
...  
Keyword(s):  
Infrared Light ◽  
Mid Infrared ◽  
Light Emitting ◽  
Light Emitting Devices

scholarly journals Prospective for graphene based thermal mid-infrared light emitting devices

AIP Advances ◽  
2014 ◽  
Vol 4 (8) ◽  
pp. 087139 ◽  
Author(s):  
L. M. Lawton ◽  
N. H. Mahlmeister ◽  
I. J. Luxmoore ◽  
G. R. Nash
Keyword(s):  
Infrared Light ◽  
Mid Infrared ◽  
Light Emitting ◽  
Light Emitting Devices

Demonstration of cascade process in InAs/GaInSb/AlSb mid-infrared light emitting devices

1998 ◽  
Vol 72 (12) ◽  
pp. 1495-1497 ◽  
Author(s):  
E. Dupont ◽  
J. P. McCaffrey ◽  
H. C. Liu ◽  
M. Buchanan ◽  
Rui Q. Yang ◽  
...  
Keyword(s):  
Infrared Light ◽  
Cascade Process ◽  
Mid Infrared ◽  
Light Emitting ◽  
Light Emitting Devices

Metalorganic Molecular Beam Epitaxy of GaAsP for Visible Light-Emitting Devices on Si

1998 ◽  
Vol 535 ◽  
Author(s):  
M. Yoshimoto ◽  
J. Saraie ◽  
T. Yasui ◽  
S. HA ◽  
H. Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Visible Light ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Good Crystallinity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Pre Treatment

AbstractGaAs1–xPx (0.2 <; x < 0.7) was grown by metalorganic molecular beam epitaxy with a GaP buffer layer on Si for visible light-emitting devices. Insertion of the GaP buffer layer resulted in bright photoluminescence of the GaAsP epilayer. Pre-treatment of the Si substrate to avoid SiC formation was also critical to obtain good crystallinity of GaAsP. Dislocation formation, microstructure and photoluminescence in GaAsP grown layer are described. A GaAsP pn junction fabricated on GaP emitted visible light (˜1.86 eV). An initial GaAsP pn diode fabricated on Si emitted infrared light.

Room temperature thermo-electric pumping in mid-infrared light-emitting diodes

2013 ◽  
Vol 103 (18) ◽  
pp. 183513 ◽  
Author(s):  
Parthiban Santhanam ◽  
Duanni Huang ◽  
Rajeev J. Ram ◽  
Maxim A. Remennyi ◽  
Boris A. Matveev
Keyword(s):  
Room Temperature ◽  
Light Emitting Diodes ◽  
Infrared Light ◽  
Thermo Electric ◽  
Mid Infrared ◽  
Light Emitting

2D materials beyond graphene toward Si integrated infrared optoelectronic devices

Nanoscale ◽  
2020 ◽  
Vol 12 (22) ◽  
pp. 11784-11807 ◽  
Author(s):  
Changyong Lan ◽  
Zhe Shi ◽  
Rui Cao ◽  
Chun Li ◽  
Han Zhang
Keyword(s):  
2D Materials ◽  
Optoelectronic Devices ◽  
Infrared Light ◽  
Optical Modulators ◽  
Light Emitting ◽  
Light Emitting Devices

A study of typical 2D materials beyond graphene suitable for infrared applications, in particular, infrared light emitting devices, optical modulators, and photodetectors.

Improved-efficiency positive and negative luminescent light-emitting devices for mid-infrared gas-sensing applications

2000 ◽  
Author(s):  
Mark J. Pullin ◽  
Xiaobing Li ◽  
Joerg Heber ◽  
David Gervaux ◽  
Christopher C. Phillips
Keyword(s):  
Gas Sensing ◽  
Mid Infrared ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Sensing Applications

Pentenary GaInAsPSb for mid-infrared light-emitting diodes and lasers grown by liquid phase epitaxy

2007 ◽  
Author(s):  
V. M. Smirnov ◽  
P. J. Batty ◽  
A. Krier ◽  
R. Jones ◽  
V. I. Vasil'ev ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Light Emitting Diodes ◽  
Infrared Light ◽  
Mid Infrared ◽  
Light Emitting
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