Dynamic IR scene projection using the single-crystal silicon liquid crystal light valve

2000 ◽  
Author(s):  
JiaoBo Gao ◽  
Ke-fei Ye ◽  
Jun Wang ◽  
HuiLing Chen ◽  
Peng Jiang ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Light Valve

High performance single crystal silicon liquid crystal light valve with good image uniformity

1989 ◽  
Vol 28 (22) ◽  
pp. 4748 ◽  
Author(s):  
Keyvan Sayyah ◽  
Murray S. Welkowsky ◽  
Philip G. Reif ◽  
Norman W. Goodwin
Keyword(s):  
Liquid Crystal ◽  
Single Crystal ◽  
High Performance ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Good Image ◽  
Light Valve

Alignment of liquid crystal E7 in composite photonic crystals based on single crystal silicon

2005 ◽  
Author(s):  
A. D. Remenyuk ◽  
E. V. Astrova ◽  
R. F. Vitman ◽  
T. S. Perova ◽  
V. A. Tolmachev
Keyword(s):  
Liquid Crystal ◽  
Photonic Crystals ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon

Investigation into the orientation of the liquid-crystal mixture E7 in composite photonic crystals based on single-crystal silicon

2006 ◽  
Vol 48 (2) ◽  
pp. 384-391
Author(s):  
A. D. Remenyuk ◽  
E. V. Astrova ◽  
R. F. Vitman ◽  
T. S. Perova ◽  
V. A. Tolmachev ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Photonic Crystals ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Crystal Mixture

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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