Modeling of gallium nitride optoelectronic devices

2000 ◽  
Author(s):  
Curt A. Flory ◽  
Ghulam Hasnain
Keyword(s):  
Gallium Nitride ◽  
Optoelectronic Devices

n- and p-type ohmic contacts at monolayer gallium nitride–metal interfaces

2018 ◽  
Vol 20 (37) ◽  
pp. 24239-24249 ◽  
Author(s):  
Ying Guo ◽  
Feng Pan ◽  
Yajie Ren ◽  
Binbin Yao ◽  
Chuanghua Yang ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Ohmic Contacts ◽  
Optoelectronic Devices ◽  
Two Dimensional ◽  
Next Generation ◽  
Metal Interfaces ◽  
P Type

Recently, two-dimensional (2D) gallium nitride (GaN) was experimentally fabricated, and has promising applications in next-generation electronic and optoelectronic devices.

scholarly journals Application of graphene as transparent electrodes in gallium nitride based optoelectronic devices

2014 ◽  
Vol 59 (12) ◽  
pp. 1087-1093
Author(s):  
Kun XU ◽  
Xin LIU ◽  
WeiLing GUO ◽  
Jie SUN ◽  
Chen XU
Keyword(s):  
Gallium Nitride ◽  
Optoelectronic Devices ◽  
Transparent Electrodes

Indium tin oxide contacts to gallium nitride optoelectronic devices

1999 ◽  
Vol 74 (26) ◽  
pp. 3930-3932 ◽  
Author(s):  
T. Margalith ◽  
O. Buchinsky ◽  
D. A. Cohen ◽  
A. C. Abare ◽  
M. Hansen ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Optoelectronic Devices

scholarly journals Evidence of optically induced degradation in gallium nitride optoelectronic devices

2018 ◽  
Vol 11 (11) ◽  
pp. 111002 ◽  
Author(s):  
Carlo De Santi ◽  
Alessandro Caria ◽  
Nicola Renso ◽  
Ezgi Dogmus ◽  
Malek Zegaoui ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Optoelectronic Devices ◽  
Optically Induced

Optical Properties of Gallium Nitride Heterostructures Grown on Silicon for Waveguiding Application

2014 ◽  
Vol 980 ◽  
pp. 41-45
Author(s):  
Irma Saraswati ◽  
Arnaud Stolz ◽  
S. Ko ◽  
Elhadj Dogheche ◽  
Nji Raden Poespawati ◽  
...  
Keyword(s):  
Optical Properties ◽  
Gallium Nitride ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Smooth Surface ◽  
Optoelectronic Devices ◽  
Coupling Technique ◽  
Prism Coupling ◽  
Algan Buffer

Gallium nitride (GaN) on silicon (Si) is governed by the possibility to use this family of semiconductor for novel optoelectronic devices. GaN layers are deposited by MOCVD on silicon Si (111) using AlGaN buffer layer. We have studied the microstructure quality of the films. From SEM, TEM and AFM observations, we have observed that the films exhibit a good quality: the films are highly oriented (0001) with a smooth surface morphology (roughness of 12nm). We have completely characterized the optical properties using the prism coupling technique.

Gallium Nitride Multioperate Optoelectronic Devices

1997 ◽  
Vol 482 ◽  
Author(s):  
V. G. Sidorov ◽  
A. G. Drizhuk ◽  
D. V. Sidorov
Keyword(s):  
Gallium Nitride ◽  
Light Emitting Diodes ◽  
Optoelectronic Devices ◽  
Light Emitting ◽  
Gan Led ◽  
Device Properties

AbstractOpportunity of creation of several optoelectronic devices such as optron, photoreceiver, switch device, IR-to-visible signal transformer and others based on i-n-GaN light emitting diodes (LED) is shown. Technology and properties of GaN LED in relation to the desired device properties are discussed. A discussion of issues relating to electrical and optical positive feed back between the device elements is also included.

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