Indium tin oxide contacts to gallium nitride optoelectronic devices

T. Margalith; O. Buchinsky; D. A. Cohen; A. C. Abare; M. Hansen; S. P. DenBaars; L. A. Coldren

doi:10.1063/1.124227

Indium tin oxide contacts to gallium nitride optoelectronic devices

Applied Physics Letters ◽

10.1063/1.124227 ◽

1999 ◽

Vol 74 (26) ◽

pp. 3930-3932 ◽

Cited By ~ 172

Author(s):

T. Margalith ◽

O. Buchinsky ◽

D. A. Cohen ◽

A. C. Abare ◽

M. Hansen ◽

...

Keyword(s):

Gallium Nitride ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Optoelectronic Devices

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Opposite Behavior of Multilayer Graphene/ Indium-Tin-Oxide p-Electrode for Gallium Nitride Based-Light Emitting Diodes Depending on Thickness of Indium-Tin-Oxide Layer

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2018.15603 ◽

2018 ◽

Vol 18 (9) ◽

pp. 6106-6111 ◽

Cited By ~ 1

Author(s):

Tae Kyoung Kim ◽

Yeo Jin Yoon ◽

Seung Kyu Oh ◽

Yu-Jung Cha ◽

In Yeol Hong ◽

...

Keyword(s):

Gallium Nitride ◽

Oxide Layer ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Light Emitting Diodes ◽

Multilayer Graphene ◽

Light Emitting ◽

Opposite Behavior

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Fabrication of conducting-filament-embedded indium tin oxide electrodes: application to lateral-type gallium nitride light-emitting diodes

Optics Express ◽

10.1364/oe.23.028775 ◽

2015 ◽

Vol 23 (22) ◽

pp. 28775 ◽

Cited By ~ 6

Author(s):

Hee-Dong Kim ◽

Kyeong Heon Kim ◽

Su Jin Kim ◽

Tae Geun Kim

Keyword(s):

Gallium Nitride ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Light Emitting Diodes ◽

Light Emitting ◽

Conducting Filament ◽

Oxide Electrodes

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Direct indium tin oxide patterning using thermal nanoimprint lithography for highly efficient optoelectronic devices

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3243170 ◽

2009 ◽

Vol 27 (6) ◽

pp. 2786 ◽

Cited By ~ 27

Author(s):

Ki-Yeon Yang ◽

Kyung-Min Yoon ◽

SangWoo Lim ◽

Heon Lee

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Nanoimprint Lithography ◽

Optoelectronic Devices ◽

Highly Efficient

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Enhanced output power of (indium) gallium nitride light emitting diodes by a transparent current spreading-film composed of a disordered network of indium tin oxide nanorods

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2013.06.008 ◽

2013 ◽

Vol 16 (6) ◽

pp. 1719-1722 ◽

Cited By ~ 6

Author(s):

Yan Shen ◽

Huayong Xu ◽

Xiangang Xu ◽

Qing Liu ◽

Huan Liu ◽

...

Keyword(s):

Gallium Nitride ◽

Output Power ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Indium Gallium Nitride ◽

Light Emitting Diodes ◽

Current Spreading ◽

Light Emitting ◽

Oxide Nanorods ◽

Indium Gallium

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Photo-degradation of the indium tin oxide (ITO)/organic interface in organic optoelectronic devices and a new outlook on the role of ITO surface treatments and interfacial layers in improving device stability

Organic Electronics ◽

10.1016/j.orgel.2012.06.017 ◽

2012 ◽

Vol 13 (10) ◽

pp. 2075-2082 ◽

Cited By ~ 27

Author(s):

Qi Wang ◽

Graeme Williams ◽

Hany Aziz

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Optoelectronic Devices ◽

Surface Treatments ◽

Photo Degradation ◽

Interfacial Layers ◽

Device Stability ◽

Organic Optoelectronic Devices ◽

Organic Optoelectronic

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Temperature-dependent contact resistivity of radio frequency superimposed direct current sputtered indium tin oxide ohmic contact to p-type gallium nitride

Thin Solid Films ◽

10.1016/j.tsf.2015.04.067 ◽

2015 ◽

Vol 591 ◽

pp. 182-185 ◽

Cited By ~ 4

Author(s):

Yu-Jung Cha ◽

Gil Jun Lee ◽

Yu Lim Lee ◽

Seung Kyu Oh ◽

Joon Seop Kwak

Keyword(s):

Gallium Nitride ◽

Radio Frequency ◽

Direct Current ◽

Tin Oxide ◽

Ohmic Contact ◽

Indium Tin Oxide ◽

Contact Resistivity ◽

Temperature Dependent ◽

P Type

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Dynamically Switching the Electronic and Electrostatic Properties of Indium–Tin Oxide Electrodes with Photochromic Monolayers: Toward Photoswitchable Optoelectronic Devices

ACS Applied Nano Materials ◽

10.1021/acsanm.9b00094 ◽

2019 ◽

Vol 2 (2) ◽

pp. 1102-1110 ◽

Cited By ~ 8

Author(s):

Qiankun Wang ◽

Valentin Diez-Cabanes ◽

Simone Dell’Elce ◽

Andrea Liscio ◽

Björn Kobin ◽

...

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Optoelectronic Devices ◽

Electrostatic Properties ◽

Oxide Electrodes

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The effects of surface roughness and nanostructure on the properties of indium tin oxide (ITO) designated for novel optoelectronic devices fabrication

Journal of Materials Processing Technology ◽

10.1016/j.jmatprotec.2008.01.024 ◽

2008 ◽

Vol 208 (1-3) ◽

pp. 514-519 ◽

Cited By ~ 18

Author(s):

G. Kavei ◽

A. Mohammadi Gheidari

Keyword(s):

Surface Roughness ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Optoelectronic Devices

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Photodetectors formed by an indium tin oxide/zinc oxide/p-type gallium nitride heterojunction with high ultraviolet-to-visible rejection ratio

Applied Physics Letters ◽

10.1063/1.3064130 ◽

2009 ◽

Vol 94 (1) ◽

pp. 013512 ◽

Cited By ~ 21

Author(s):

M. L. Lee ◽

Ping-Feng Chi ◽

J. K. Sheu

Keyword(s):

Zinc Oxide ◽

Gallium Nitride ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Rejection Ratio ◽

P Type

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Effect of nitrogen doping on the structural, optical and electrical properties of indium tin oxide films prepared by magnetron sputtering for gallium nitride light emitting diodes

Superlattices and Microstructures ◽

10.1016/j.spmi.2016.11.054 ◽

2017 ◽

Vol 101 ◽

pp. 261-270 ◽

Cited By ~ 7

Author(s):

Lifei Tian ◽

Guoan Cheng ◽

Hougong Wang ◽

Yulong Wu ◽

Ruiting Zheng ◽

...

Keyword(s):

Gallium Nitride ◽

Electrical Properties ◽

Magnetron Sputtering ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Nitrogen Doping ◽

Light Emitting Diodes ◽

Optical And Electrical Properties ◽

Light Emitting ◽

Tin Oxide Films

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