Novel spin-coating technology for 248-nm/193-nm DUV lithography and low-k spin on dielectrics of 200-mm/300-mm wafers

Author(s):  
Emir Gurer ◽  
Tom X. Zhong ◽  
John W. Lewellen ◽  
Ed C. Lee
Keyword(s):  
193 Nm ◽  
2016 ◽  
Vol 8 (2) ◽  
pp. 025005 ◽  
Author(s):  
Raffaele Vecchione ◽  
Gabriele Pitingolo ◽  
Daniela Guarnieri ◽  
Andrea P Falanga ◽  
Paolo A Netti

2002 ◽  
Vol 41 (Part 1, No. 6A) ◽  
pp. 3922-3923 ◽  
Author(s):  
Tsuyoshi Komaki ◽  
Hideki Hirata ◽  
Mamoru Usami ◽  
Tomoki Ushida ◽  
Naoki Hayashida ◽  
...  

Author(s):  
B. Heinz ◽  
T. Eisenhammer ◽  
M. Dubs ◽  
C. Yavaser ◽  
T. Pfaff

Author(s):  
S. A. Kozyukhin ◽  
◽  
Thi Hang Nguyen ◽  
A. A. Korlyukov ◽  
A. A. Polohin ◽  
...  

2002 ◽  
Vol 716 ◽  
Author(s):  
Ben Zhong ◽  
Herman Meynen ◽  
Francesca Iocopi ◽  
Ken Weidner ◽  
Stephane Mailhouitre ◽  
...  

AbstractA ULK material based on a siloxane resin has been developed that can be processed using spin-coating and thermal cure to yield porous low-k films. The chemical bonds between the resin and porogen groups prevent the phase separation of the porogen from the resin during curing and lead to extremely small pores. The highly hydrophobic thin films made from this material displayed dielectric constant of 1.8, breakdown voltage of 4 MV/cm, a cohesive strength > 60 MPa, excellent crack resistance, and an average pore size of 2.2 nm by Positron Annihilation Lifetime Spectroscopy (PALS) and 2.5-3.0 nm by Ellipsometric Porosimetry (EP). In this paper, our strategy for designing low-k materials, the material properties and initial integration results for this new material will be discussed.


2015 ◽  
Vol 71 (1) ◽  
pp. 10301 ◽  
Author(s):  
Ze Jia ◽  
Xiao Wu ◽  
Mingming Zhang ◽  
Jianlong Xu ◽  
Naiwen Zhang ◽  
...  

2007 ◽  
Author(s):  
Bernd Heinz ◽  
Thomas Eisenhammer ◽  
Martin Dubs ◽  
Cem Yavaser ◽  
Thomas Pfaff

2006 ◽  
Author(s):  
Sung-Jin Kim ◽  
Jin-Baek Park ◽  
Sung-Hyuck Kim ◽  
Hye-Young Kang ◽  
Young-Min Kang ◽  
...  
Keyword(s):  
193 Nm ◽  

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