Line-edge roughness of chemically amplified resists

Optimum Dissolution Point of Chemically Amplified Resists in Terms of Trade-Off Relationships between Resolution, Line Edge Roughness, and Sensitivity

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.026502 ◽

2011 ◽

Vol 50 (2R) ◽

pp. 026502

Author(s):

Takahiro Kozawa ◽

Hiroki Yamamoto ◽

Seiichi Tagawa

Keyword(s):

Terms Of Trade ◽

Line Edge Roughness ◽

Trade Off ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resists

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Relationship between Stochastic Effect and Line Edge Roughness in Chemically Amplified Resists for Extreme Ultraviolet Lithography Studied by Monte Carlo Simulation

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.086504 ◽

2012 ◽

Vol 51 (8R) ◽

pp. 086504 ◽

Cited By ~ 25

Author(s):

Takahiro Kozawa

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Line Edge Roughness ◽

Ultraviolet Lithography ◽

Stochastic Effect ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resists

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Relationship between Stochastic Effect and Line Edge Roughness in Chemically Amplified Resists for Extreme Ultraviolet Lithography Studied by Monte Carlo Simulation

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.086504 ◽

2012 ◽

Vol 51 ◽

pp. 086504 ◽

Cited By ~ 10

Author(s):

Takahiro Kozawa

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Line Edge Roughness ◽

Ultraviolet Lithography ◽

Stochastic Effect ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resists

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Heavy metal incorporated helium ion active hybrid non-chemically amplified resists: Nano-patterning with low line edge roughness

AIP Advances ◽

10.1063/1.4989981 ◽

2017 ◽

Vol 7 (8) ◽

pp. 085314 ◽

Cited By ~ 6

Author(s):

Pulikanti Guruprasad Reddy ◽

Neha Thakur ◽

Chien-Lin Lee ◽

Sheng-Wei Chien ◽

Chullikkattil P. Pradeep ◽

...

Keyword(s):

Heavy Metal ◽

Line Edge Roughness ◽

Chemically Amplified ◽

Edge Roughness ◽

Helium Ion ◽

Chemically Amplified Resists ◽

Nano Patterning

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Relationship between Sensitization Distance and Photon Shot Noise in Line Edge Roughness Formation of Chemically Amplified Resists Used for Extreme Ultraviolet Lithography

Journal of Photopolymer Science and Technology ◽

10.2494/photopolymer.30.197 ◽

2017 ◽

Vol 30 (2) ◽

pp. 197-203 ◽

Cited By ~ 3

Author(s):

Takahiro Kozawa ◽

Julius Joseph Santillan ◽

Toshiro Itani

Keyword(s):

Shot Noise ◽

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Line Edge Roughness ◽

Ultraviolet Lithography ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resists

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Line-edge roughness in positive-tone chemically amplified resists: effect of additives and processing conditions

10.1117/12.436836 ◽

2001 ◽

Cited By ~ 5

Author(s):

Qinghuang Lin ◽

Dario L. Goldfarb ◽

Marie Angelopoulos ◽

Suresh R. Sriram ◽

Jeffrey S. Moore

Keyword(s):

Processing Conditions ◽

Line Edge Roughness ◽

Chemically Amplified ◽

Effect Of Additives ◽

Edge Roughness ◽

Chemically Amplified Resists

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Understanding the effects of photoacid distribution homogeneity and diffusivity on critical dimension control and line edge roughness in chemically amplified resists

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2976601 ◽

2008 ◽

Vol 26 (6) ◽

pp. 2276-2280 ◽

Cited By ~ 5

Author(s):

Cheng-Tsung Lee ◽

Richard A. Lawson ◽

Clifford L. Henderson

Keyword(s):

Critical Dimension ◽

Line Edge Roughness ◽

Chemically Amplified ◽

Dimension Control ◽

Edge Roughness ◽

Chemically Amplified Resists

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Relationship between Absorption Coefficient and Line Edge Roughness of Chemically Amplified Resists Used for Extreme Ultraviolet Lithography

Journal of Photopolymer Science and Technology ◽

10.2494/photopolymer.25.625 ◽

2012 ◽

Vol 25 (5) ◽

pp. 625-631 ◽

Cited By ~ 13

Author(s):

Takahiro Kozawa

Keyword(s):

Absorption Coefficient ◽

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Line Edge Roughness ◽

Ultraviolet Lithography ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resists

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Monte Carlo simulation of gel formation and surface and line-edge roughness in negative tone chemically amplified resists

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1542616 ◽

2003 ◽

Vol 21 (1) ◽

pp. 254 ◽

Cited By ~ 4

Author(s):

G. P. Patsis ◽

N. Glezos ◽

E. Gogolides

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Gel Formation ◽

Line Edge Roughness ◽

Chemically Amplified ◽

Edge Roughness ◽

Negative Tone ◽

Chemically Amplified Resists

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Optimum Dissolution Point of Chemically Amplified Resists in Terms of Trade-Off Relationships between Resolution, Line Edge Roughness, and Sensitivity

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.026502 ◽

2011 ◽

Vol 50 (2) ◽

pp. 026502 ◽

Cited By ~ 5

Author(s):

Takahiro Kozawa ◽

Hiroki Yamamoto ◽

Seiichi Tagawa

Keyword(s):

Terms Of Trade ◽

Line Edge Roughness ◽

Trade Off ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resists

Download Full-text