Self-assembled InAs/Si quantum dot stacks grown by molecular beam epitaxy

2000 ◽  
Author(s):  
P. C. Sharma ◽  
Y. S. Tang ◽  
K. W. Alt ◽  
Kang L. Wang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Si Quantum Dot ◽  
Self Assembled

Fabrication of CdTe Quantum Dot Arrays on GaAs utilizng Nanoporous Alumina Masks

2004 ◽  
Vol 818 ◽  
Author(s):  
Mi Jung ◽  
Hong Seok Lee ◽  
Hong Lee Park ◽  
Sun-Il Mho
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Pore Density ◽  
Nanoporous Alumina ◽  
Gaas Substrates ◽  
Cdte Qds ◽  
Self Assembled ◽  
Cdte Quantum Dot

AbstractThe uniformity and reproducibility of the CdTe QD arrays on the GaAs substrates can be improved by using a nanoporous mask. The CdTe QDs on the GaAs substrate were grown by a molecular beam epitaxy (MBE) method. The nanoporous alumina masks used for the fabrication of QD arrays have the thickness from 0.3 νm to 5 νm with the nanochannels of ∼ 80 nm diameter and the pore density of ∼ 1010cm−2. When the thickness of the alumina mask used for the CdTe QD growth was about 300 nm, the CdTe QD arrays formed as a replica of the nanochannels of the mask. Smaller self-assembled CdTe QDs located randomly were produced by using the thicker nanochannel mask than 0.5 νm. The thickness of the nanochannel mask controls the size of the CdTe/GaAs QDs.

Self-assembled lateral Bi-quantum-dot molecule formation by gas-source molecular beam epitaxy

2007 ◽  
Vol 301-302 ◽  
pp. 735-739 ◽  
Author(s):  
S. Suraprapapich ◽  
Y.M. Shen ◽  
V.A. Odnoblyudov ◽  
Y. Fainman ◽  
S. Panyakeow ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Molecule Formation ◽  
Gas Source ◽  
Self Assembled

Evolution of self-assembled InAs quantum dot molecules by molecular beam epitaxy

2012 ◽  
Vol 9 (7) ◽  
pp. 1534-1536 ◽  
Author(s):  
Ong-arj Tangmettajittakul ◽  
Supachok Thainoi ◽  
Somsak Panyakeow ◽  
Somchai Ratanathammaphan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Quantum Dot Molecules ◽  
Self Assembled ◽  
Inas Quantum Dot

InNAs and GaInNAs self-assembled quantum dots and lasers grown by solid source molecular beam epitaxy

2003 ◽  
Vol 794 ◽  
Author(s):  
Z.Z. Sun ◽  
S.F. Yoon ◽  
K.C. Yew ◽  
B.X. Bo
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Plasma Source ◽  
Nitrogen Plasma ◽  
Force Microscopy ◽  
Self Assembled ◽  
Dot Density

ABSTRACTSelf-assembled Ga1−xInxNyAs1-y quantum dots were grown on GaAs by solid source molecular beam epitaxy (SSMBE). Introduction of N was achieved by a RF Nitrogen plasma source. Formation of quantum dots by S-K growth mode is confirmed by observation of standard 2D-3D RHEED pattern transition. Atomic force microscopy (AFM) and photoluminescence (PL) measurements were used to characterize the structure and optical properties of GaInNAs quantum dots. High GaInNAs quantum dot density (1010∼1011cm−2) was obtained for different In and N composition (0.3≤ x ≤1, y≤0.01). The effect of surface coverage on dot density, dot size, and optical properties was studied in detail. Adjusting the bandgap confinement by incorporating a GaNAs strain-reduction layer into the GaInNAs dot layer was found to extend the emission wavelength by 170nm. Room temperature pulsed operation is demonstrated for a Ga0.5In0.5N0.01As0.99 quantum dot laser emitting at ∼1.1μm.

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