Growth of Self-Assembled Quantum Dots, Quantum Rings, and Lateral Bi-Quantum-Dot Molecules by Gas-Source Molecular Beam Epitaxy

2019 ◽  
Vol 3 (5) ◽  
pp. 29-33
Author(s):  
C. W. Tu ◽  
S. Suraprapapich ◽  
Y.M. Shen ◽  
Y. Fainman ◽  
S. Panyakeow
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Quantum Rings ◽  
Gas Source ◽  
Quantum Dot Molecules ◽  
Self Assembled

Self-assembled lateral Bi-quantum-dot molecule formation by gas-source molecular beam epitaxy

2007 ◽  
Vol 301-302 ◽  
pp. 735-739 ◽  
Author(s):  
S. Suraprapapich ◽  
Y.M. Shen ◽  
V.A. Odnoblyudov ◽  
Y. Fainman ◽  
S. Panyakeow ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Molecule Formation ◽  
Gas Source ◽  
Self Assembled

Evolution of self-assembled InAs quantum dot molecules by molecular beam epitaxy

2012 ◽  
Vol 9 (7) ◽  
pp. 1534-1536 ◽  
Author(s):  
Ong-arj Tangmettajittakul ◽  
Supachok Thainoi ◽  
Somsak Panyakeow ◽  
Somchai Ratanathammaphan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Quantum Dot Molecules ◽  
Self Assembled ◽  
Inas Quantum Dot

Spontaneous lateral alignment of In0.25Ga0.75As self-assembled quantum dots on (311)B GaAs grown by gas source molecular beam epitaxy

1997 ◽  
Vol 70 (26) ◽  
pp. 3579-3581 ◽  
Author(s):  
Kenichi Nishi ◽  
Takayoshi Anan ◽  
Akiko Gomyo ◽  
Shigeru Kohmoto ◽  
Shigeo Sugou
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gas Source ◽  
Self Assembled

Size Quantization in InAs/GaAs Self-Assembled Quantum Dots Grown by Gas-Source Molecular Beam Epitaxy

1998 ◽  
Vol 37 (Part 1, No. 3B) ◽  
pp. 1548-1551 ◽  
Author(s):  
Hong-Wen Ren ◽  
Kenichi Nishi ◽  
Shigeo Sugou ◽  
Yasuaki Masumoto
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Size Quantization ◽  
Gas Source ◽  
Self Assembled

InNAs and GaInNAs self-assembled quantum dots and lasers grown by solid source molecular beam epitaxy

2003 ◽  
Vol 794 ◽  
Author(s):  
Z.Z. Sun ◽  
S.F. Yoon ◽  
K.C. Yew ◽  
B.X. Bo
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Plasma Source ◽  
Nitrogen Plasma ◽  
Force Microscopy ◽  
Self Assembled ◽  
Dot Density

ABSTRACTSelf-assembled Ga1−xInxNyAs1-y quantum dots were grown on GaAs by solid source molecular beam epitaxy (SSMBE). Introduction of N was achieved by a RF Nitrogen plasma source. Formation of quantum dots by S-K growth mode is confirmed by observation of standard 2D-3D RHEED pattern transition. Atomic force microscopy (AFM) and photoluminescence (PL) measurements were used to characterize the structure and optical properties of GaInNAs quantum dots. High GaInNAs quantum dot density (1010∼1011cm−2) was obtained for different In and N composition (0.3≤ x ≤1, y≤0.01). The effect of surface coverage on dot density, dot size, and optical properties was studied in detail. Adjusting the bandgap confinement by incorporating a GaNAs strain-reduction layer into the GaInNAs dot layer was found to extend the emission wavelength by 170nm. Room temperature pulsed operation is demonstrated for a Ga0.5In0.5N0.01As0.99 quantum dot laser emitting at ∼1.1μm.

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