Fabrication of bandgap-tuned lasers in GaAs/AlGaAs structure using sol-gel SiO2-induced quantum well intermixing

1999 ◽  
Author(s):  
Lye Huat Lee ◽  
Oki Gunawan ◽  
Boon Siew Ooi ◽  
Yan Zhou ◽  
Yuen Chuen Chan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Sol Gel ◽  
Quantum Well Intermixing

Quantum well intermixing in GaAs-AlGaAs laser structure using sol-gel SiO 2 dielectric cap

1998 ◽  
Author(s):  
Lye Huat Lee ◽  
Boon Siew Ooi ◽  
Yee Loy Lam ◽  
Yuen Chuen Chan ◽  
Chan Hin Kam
Keyword(s):  
Quantum Well ◽  
Sol Gel ◽  
Laser Structure ◽  
Quantum Well Intermixing

Quantum-well Intermixing using Ge-doped Sol-gel Derived Silica Encapsulant Layer

2005 ◽  
Vol 891 ◽  
Author(s):  
Hery Susanto Djie ◽  
Boon-Siew Ooi ◽  
Charles Kin-Fai Ho ◽  
Ting Mei ◽  
Kantisara Pita ◽  
...  
Keyword(s):  
Activation Energy ◽  
Theoretical Model ◽  
Quantum Well ◽  
Quantum Wells ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Quantum Well Intermixing ◽  
Quantum Well Laser ◽  
Similar Temperature ◽  
The Difference

ABSTRACTWe report the intermixing enhancement using the Ge-doped sol-gel derived silica encapsulant layer in InGaAs/InGaAsP quantum-well laser structure. A bandgap shift of ∼64 nm has been observed from 16% Ge-doped silica capped sample at an annealing temperature of 630°C while the intermixing at the similar temperature can be effectively suppressed with the e-beam evaporated SiO2 encapsulant layer. Using our theoretical model, nearly identical activation energy of 1.7±0.5 eV was obtained from the intermixed sample with Ge-doped silica. Similar intermixing enhancement holds for high Ge-content cap in the intermixed GaAs/AlGaAs quantum-wells related to Ga vacancy injection. We postulate that the dissimilarity in interdiffusion behavior between 0% and 16% Ge-doped silica capped sample is only attributed to the difference in the number of beneficial vacancies that involve in the intermixing process.

scholarly journals Characterization of selective quantum well intermixing in 1.3 μm GaInNAs/GaAs structures

2003 ◽  
Vol 94 (3) ◽  
pp. 1550-1556 ◽  
Author(s):  
H. D. Sun ◽  
R. Macaluso ◽  
M. D. Dawson ◽  
F. Robert ◽  
A. C. Bryce ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Intermixing

Barrier-enhanced InGaAs/InAlAs photodetectors using quantum-well intermixing

2004 ◽  
Vol 48 (10-11) ◽  
pp. 1783-1790 ◽  
Author(s):  
Gregory B. Tait ◽  
David B. Ameen
Keyword(s):  
Quantum Well ◽  
Quantum Well Intermixing

Optical Diagnostics of Microstructures Fabricated Using Quantum Well Intermixing

1999 ◽  
Vol 607 ◽  
Author(s):  
A. Saher Helmy ◽  
A.C. Bryce ◽  
C.N. Ironside ◽  
J.S. Aitchison ◽  
J.H. Marsh ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Quantum Well ◽  
Spatial Resolution ◽  
Optical Diagnostics ◽  
Complete Suppression ◽  
Quantum Well Intermixing ◽  
Spatially Resolved ◽  
Non Destructive ◽  
Insight Into ◽  
Free Vacancy

AbstractIn this paper we shall discuss techniques for accurate, non-destructive, optical characterisation of structures fabricated using quantum well intermixing (QWI). Spatially resolved photoluminescence and Raman spectroscopy were used to characterise the lateral bandgap profiles produced by impurity free vacancy disordering (IFVD) technology. Different features were used to examine the spatial resolution of the intermixing process. Features include 1:1 gratings as well as isolated stripes. From the measurements, the spatial selectivity of IFVD could be identified, and was found to be ∼4.5 μm, in contrast with the spatial resolution of the process of sputtering induced intermixing, which was found to be ∼2.5 μm. In addition, PL measurements on 1:1 gratings fabricated using IFVD show almost complete suppression of intermixing dielectric cap gratings with periods less than 10 microns. Finally, some insight into the limitations and merits of PL and Raman for the precision characterisation of QWI will be presented.

scholarly journals Broadband III-V on silicon hybrid superluminescent LEDs by quantum well intermixing and multiple die bonding

2014 ◽  
Author(s):  
A. De Groote ◽  
J. D. Peters ◽  
M. L. Davenport ◽  
M. J. R. Heck ◽  
R. Baets ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Intermixing ◽  
Die Bonding

Spatially-Controllable Quantum Well Intermixing with Stripe-Size Dependence in AlGaAs Heterostructures

1998 ◽  
Vol 37 (Part 1, No. 9A) ◽  
pp. 4818-4821
Author(s):  
Nak-Jin Son ◽  
Haewook Han ◽  
O-Dae Kwon
Keyword(s):  
Quantum Well ◽  
Size Dependence ◽  
Quantum Well Intermixing
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