Quantum well intermixing enhancement using Ge-doped sol-gel derived SiO2 encapsulant layer in InGaAs∕InP laser structure
2000 ◽
Vol 130
(1)
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pp. 116-121
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Keyword(s):
2005 ◽
Vol 16
(2)
◽
pp. 159-161
Keyword(s):
Keyword(s):