High-resolution stress and temperature measurements in semiconductor devices using micro-Raman spectroscopy

1999 ◽  
Author(s):  
Ingrid De Wolf ◽  
Jian Chen ◽  
Mahmoud Rasras ◽  
W. Merlijn van Spengen ◽  
Veerle Simons
Keyword(s):  
Raman Spectroscopy ◽  
High Resolution ◽  
Semiconductor Devices ◽  
Temperature Measurements ◽  
Micro Raman Spectroscopy

Study of Triangle-Shaped Defects on Nearly On-Axis 4H-SiC Substrates

2016 ◽  
Vol 858 ◽  
pp. 225-228 ◽  
Author(s):  
Ren Wei Zhou ◽  
Xue Chao Liu ◽  
Hui Jun Guo ◽  
H.K. Kong ◽  
Er Wei Shi
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
High Resolution ◽  
Optical Microscopy ◽  
Epitaxial Growth ◽  
Surface Defects ◽  
Micro Raman Spectroscopy ◽  
Transmission Electron

Triangle-shaped defects are one of the most common surface defects on epitaxial growth of 4H-SiC epilayer on nearly on-axis SiC substrate. In this paper, we investigate the feature and structure of such defects using Nomarski optical microscopy (NOM), micro-Raman spectroscopy and high resolution transmission electron microscopy (HR-TEM). It is found that triangle-shaped defects were composed of a thick 3C-SiC polytype, as well as 4H-SiC epilayer.

scholarly journals In-line Si1-xGex epitaxial process monitoring and diagnostics using multiwavelength high resolution micro-Raman spectroscopy

AIP Advances ◽  
2012 ◽  
Vol 2 (2) ◽  
pp. 022117 ◽  
Author(s):  
Chun-Wei Chang ◽  
Min-Hao Hong ◽  
Wei-Fan Lee ◽  
Kuan-Ching Lee ◽  
Shen-Min Yang ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
High Resolution ◽  
Process Monitoring ◽  
Micro Raman Spectroscopy ◽  
Monitoring And Diagnostics

Nanomechanical Analysis of Triangular Defect in 4H-SiC Epilayer

2014 ◽  
Vol 778-780 ◽  
pp. 394-397 ◽  
Author(s):  
Yun Ji Shin ◽  
Soo In Kim ◽  
Hyeon Jin Jung ◽  
Chang Woo Lee ◽  
Wook Bahng
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
High Resolution ◽  
Stacking Faults ◽  
Crystallographic Structure ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Micro Raman Spectroscopy ◽  
Transmission Electron

We report an investigation of the formation of triangular defects (TDs) in 4H–SiC expitaxial layers using Kelvin probe force microscopy (KPFM) and a nano-indenter. The results provide valuable information on the crystallographic structure, including the polytype nature of the TDs and surface potential profile. The TDs were also characterized using micro-Raman spectroscopy and high-resolution transmission electron microscopy. We found that the TDs were composed of a thick 3C-SiC band, as well as stacking faults (SFs) in the 4H-SiC epilayer.

Comparison of ultra high resolution immersion lens CFESEM and TEM for imaging of semiconductor devices

1990 ◽  
Vol 48 (4) ◽  
pp. 622-623
Author(s):  
Terrence Reilly ◽  
Al Pelillo ◽  
Barbara Miner
Keyword(s):  
High Resolution ◽  
Sample Preparation ◽  
Cross Sections ◽  
Semiconductor Devices ◽  
Ion Milling ◽  
Observation Area ◽  
Transmission Electron ◽  
Milling Machines ◽  
Resolution Imaging ◽  
Electron Microscopes

The use of transmission electron microscopes (TEM) has proven to be very valuable in the observation of semiconductor devices. The need for high resolution imaging becomes more important as the devices become smaller and more complex. However, the sample preparation for TEM observation of semiconductor devices have generally proven to be complex and time consuming. The use of ion milling machines usually require a certain degree of expertise and allow a very limited viewing area. Recently, the use of an ultra high resolution "immersion lens" cold cathode field emission scanning electron microscope (CFESEM) has proven to be very useful in the observation of semiconductor devices. Particularly at low accelerating voltages where compositional contrast is increased. The Hitachi S-900 has provided comparable resolution to a 300kV TEM on semiconductor cross sections. Using the CFESEM to supplement work currently being done with high voltage TEMs provides many advantages: sample preparation time is greatly reduced and the observation area has also been increased to 7mm. The larger viewing area provides the operator a much greater area to search for a particular feature of interest. More samples can be imaged on the CFESEM, leaving the TEM for analyses requiring diffraction work and/or detecting the nature of the crystallinity.

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