1997 GaAs Reliability Workshop Proceedings GAASRW-97
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Analysis of surface and substrate deep-trap effects on gate-lag phenomena in GaAs MESFETs

1997 GaAs Reliability Workshop Proceedings GAASRW-97 ◽

10.1109/gaasrw.1997.656142 ◽

2002 ◽

Cited By ~ 1

Author(s):

K. Horio ◽

T. Yamada ◽

A. Wakabayashi

Keyword(s):

Deep Trap

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Hydrogen effects on GaAs microwave semiconductors

1997 GaAs Reliability Workshop Proceedings GAASRW-97 ◽

10.1109/gaasrw.1997.656128 ◽

2002 ◽

Cited By ~ 3

Author(s):

D. Ragle ◽

S. Kayali

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Outgassing of hydrogen in an enclosed cavity and ramifications on the reliability of GaAs devices

1997 GaAs Reliability Workshop Proceedings GAASRW-97 ◽

10.1109/gaasrw.1997.656134 ◽

2002 ◽

Author(s):

A.R. Reisinger ◽

S.B. Adams ◽

A.A. Immorlica

Keyword(s):

Gaas Devices

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A study of the DC and RF degradation of Be-doped AlGaAs/GaAs HBTs under constant current stress

1997 GaAs Reliability Workshop Proceedings GAASRW-97 ◽

10.1109/gaasrw.1997.656113 ◽

2002 ◽

Cited By ~ 5

Author(s):

M. Borgarino ◽

R. Menozzi ◽

J. Tasselli ◽

A. Marty ◽

F. Fantini

Keyword(s):

Constant Current ◽

Current Stress

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Accelerated lifetime testing and failure analysis of quartz based GaAs planar Schottky diodes

1997 GaAs Reliability Workshop Proceedings GAASRW-97 ◽

10.1109/gaasrw.1997.656117 ◽

2002 ◽

Cited By ~ 2

Author(s):

R. Lin ◽

I. Mehdi ◽

A. Pease ◽

R. Dengler ◽

D. Humphrey ◽

...

Keyword(s):

Failure Analysis ◽

Schottky Diodes ◽

Accelerated Lifetime ◽

Lifetime Testing

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Mechanism for the initial current gain increase in carbon-doped heterostructure bipolar transistors

1997 GaAs Reliability Workshop Proceedings GAASRW-97 ◽

10.1109/gaasrw.1997.657046 ◽

2002 ◽

Cited By ~ 7

Author(s):

J.Y. Chi ◽

K. Lu

Keyword(s):

Bipolar Transistors ◽

Current Gain ◽

Initial Current ◽

Carbon Doped

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High reliability GaAs MESFET for suppressed hot-electron-induced degradation of high efficiency power amplifiers

1997 GaAs Reliability Workshop Proceedings GAASRW-97 ◽

10.1109/gaasrw.1997.656143 ◽

2002 ◽

Cited By ~ 4

Author(s):

Y.A. Tkachenko ◽

C.J. Wei ◽

D. Bartle

Keyword(s):

Power Amplifiers ◽

High Efficiency ◽

High Reliability ◽

Hot Electron ◽

Gaas Mesfet

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S93031 phase modulator MMIC DC lifetest

1997 GaAs Reliability Workshop Proceedings GAASRW-97 ◽

10.1109/gaasrw.1997.656121 ◽

2002 ◽

Author(s):

J.D. Morrow ◽

R.W. Shaw ◽

S. Kayali

Keyword(s):

Phase Modulator

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Modeling of hydrogen effects in GaAs FETs

1997 GaAs Reliability Workshop Proceedings GAASRW-97 ◽

10.1109/gaasrw.1997.656133 ◽

2002 ◽

Cited By ~ 1

Author(s):

R.R. Mutha ◽

D.P. Rancour ◽

S.A. Kayali ◽

W.T. Anderson

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Performance and reliability of InAlAs/InGaAs/lnP HEMTs technology for millimeter wave applications

1997 GaAs Reliability Workshop Proceedings GAASRW-97 ◽

10.1109/gaasrw.1997.656127 ◽

2002 ◽

Cited By ~ 2

Author(s):

Y.C. Chou ◽

D. Leung ◽

R. Lai ◽

Y.C. Chen ◽

G.P. Li ◽

...

Keyword(s):

Millimeter Wave

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1997 GaAs Reliability Workshop Proceedings GAASRW-97Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Analysis of surface and substrate deep-trap effects on gate-lag phenomena in GaAs MESFETs

Hydrogen effects on GaAs microwave semiconductors

Outgassing of hydrogen in an enclosed cavity and ramifications on the reliability of GaAs devices

A study of the DC and RF degradation of Be-doped AlGaAs/GaAs HBTs under constant current stress

Accelerated lifetime testing and failure analysis of quartz based GaAs planar Schottky diodes

Mechanism for the initial current gain increase in carbon-doped heterostructure bipolar transistors

High reliability GaAs MESFET for suppressed hot-electron-induced degradation of high efficiency power amplifiers

S93031 phase modulator MMIC DC lifetest

Modeling of hydrogen effects in GaAs FETs

Performance and reliability of InAlAs/InGaAs/lnP HEMTs technology for millimeter wave applications

1997 GaAs Reliability Workshop Proceedings GAASRW-97
Latest Publications