Optical design of the Next-Generation Sky Survey (NGSS) telescope

Optical design of a compact telescope for the next generation Earth observation system

International Conference on Space Optics — ICSO 2012 ◽

10.1117/12.2309055 ◽

2017 ◽

Cited By ~ 1

Author(s):

Guillaume Cassar ◽

Vincent Costes ◽

Laurent Escarrat

Keyword(s):

Optical Design ◽

Earth Observation ◽

Observation System ◽

Next Generation ◽

Earth Observation System

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The optical design of GMOX: a next-generation instrument concept for Gemini

10.1117/12.2233459 ◽

2016 ◽

Author(s):

Robert Barkhouser ◽

Massimo Robberto ◽

Stephen A. Smee ◽

Zoran Ninkov ◽

Mario Gennaro ◽

...

Keyword(s):

Optical Design ◽

Next Generation

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Concurrent engineering of a next-generation freeform telescope: optical design

Advanced Optics for Imaging Applications: UV through LWIR IV ◽

10.1117/12.2519174 ◽

2019 ◽

Author(s):

Aaron M. Bauer ◽

Eric M. Schiesser ◽

Jannick P. Rolland

Keyword(s):

Concurrent Engineering ◽

Optical Design ◽

Next Generation

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Real-Time Classification of Transient Events in Synoptic Sky Surveys

Proceedings of the International Astronomical Union ◽

10.1017/s1743921312001056 ◽

2011 ◽

Vol 7 (S285) ◽

pp. 355-357 ◽

Cited By ~ 2

Author(s):

Ashish A. Mahabal ◽

C. Donalek ◽

S. G. Djorgovski ◽

A. J. Drake ◽

M. J. Graham ◽

...

Keyword(s):

Real Time ◽

Automated Classification ◽

Next Generation ◽

Classification Techniques ◽

Sky Surveys ◽

Sky Survey ◽

Transient Events ◽

Real Time Classification

AbstractAn automated rapid classification of the transient events detected in modern synoptic sky surveys is essential for their scientific utility and effective follow-up when resources are scarce. This problem will grow by orders of magnitude with the next generation of surveys. We are exploring a variety of novel automated classification techniques, mostly Bayesian, to respond to those challenges, using the ongoing CRTS sky survey as a testbed. We describe briefly some of the methods used.

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RapidNano: Towards 20nm Particle Detection on EUV Mask Blanks

MRS Advances ◽

10.1557/adv.2016.299 ◽

2016 ◽

Vol 1 (31) ◽

pp. 2225-2236 ◽

Cited By ~ 2

Author(s):

Jacques van der Donck ◽

Peter Bussink ◽

Erik Fritz ◽

Peter van der Walle

Keyword(s):

Particle Size ◽

Signal To Noise Ratio ◽

Semiconductor Industry ◽

Optical Design ◽

Dark Field ◽

Detection Methods ◽

Next Generation ◽

Large Area ◽

Dark Field Imaging ◽

20 Nm

ABSTRACTCleanliness is a prerequisite for obtaining economically feasible yield levels in the semiconductor industry. For the next generation of lithographic equipment, EUV lithography, the size of yield-loss inducing particles for the masks will be smaller than 20 nm. Consequently, equipment for handling EUV masks should not add particles larger than 20 nm. Detection methods for 20 nm particles on large area surfaces are needed to qualify the equipment for cleanliness. Detection of 20 nm particles is extremely challenging, not only because of the particle size, but also because of the large surface area and limited available time.In 2002 TNO developed the RapidNano, a platform that is capable of detecting nanoparticles on flat substrates. Over the last decade, the smallest detectable particle size was decreased while the inspection rate was increased. This effort has led to a stable and affordable detection platform that is capable of inspecting the full surface of a mask blank.The core of RapidNano is a dark-field imaging technique. Every substrate type has a typical background characteristic, which strongly affects the size of the smallest detectable particle. The noise level is induced by the speckle generated by the surface roughness of the mask. The signal-to-noise ratio can be improved by illuminating the inspection area from nine different angles. This improvement was first shown on test bench level and then applied in the RapidNano3. The RapidNano3 is capable of detecting 42nm latex sphere equivalents (and larger) on silicon surfaces. RapidNano4, the next generation, will use 193 nm light and the same nine angle illumination mode. Camera sensitivity and available laser power determine the achievable throughput. Therefore, special care was given to the optical design, particularly the optical path. With RapidNano4, TNO will push the detection limit of defects on EUV blanks to below 20nm.

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