RapidNano: Towards 20nm Particle Detection on EUV Mask Blanks

MRS Advances ◽  
2016 ◽  
Vol 1 (31) ◽  
pp. 2225-2236 ◽  
Author(s):  
Jacques van der Donck ◽  
Peter Bussink ◽  
Erik Fritz ◽  
Peter van der Walle
Keyword(s):  
Particle Size ◽  
Signal To Noise Ratio ◽  
Semiconductor Industry ◽  
Optical Design ◽  
Dark Field ◽  
Detection Methods ◽  
Next Generation ◽  
Large Area ◽  
Dark Field Imaging ◽  
20 Nm

ABSTRACTCleanliness is a prerequisite for obtaining economically feasible yield levels in the semiconductor industry. For the next generation of lithographic equipment, EUV lithography, the size of yield-loss inducing particles for the masks will be smaller than 20 nm. Consequently, equipment for handling EUV masks should not add particles larger than 20 nm. Detection methods for 20 nm particles on large area surfaces are needed to qualify the equipment for cleanliness. Detection of 20 nm particles is extremely challenging, not only because of the particle size, but also because of the large surface area and limited available time.In 2002 TNO developed the RapidNano, a platform that is capable of detecting nanoparticles on flat substrates. Over the last decade, the smallest detectable particle size was decreased while the inspection rate was increased. This effort has led to a stable and affordable detection platform that is capable of inspecting the full surface of a mask blank.The core of RapidNano is a dark-field imaging technique. Every substrate type has a typical background characteristic, which strongly affects the size of the smallest detectable particle. The noise level is induced by the speckle generated by the surface roughness of the mask. The signal-to-noise ratio can be improved by illuminating the inspection area from nine different angles. This improvement was first shown on test bench level and then applied in the RapidNano3. The RapidNano3 is capable of detecting 42nm latex sphere equivalents (and larger) on silicon surfaces. RapidNano4, the next generation, will use 193 nm light and the same nine angle illumination mode. Camera sensitivity and available laser power determine the achievable throughput. Therefore, special care was given to the optical design, particularly the optical path. With RapidNano4, TNO will push the detection limit of defects on EUV blanks to below 20nm.

scholarly journals Erratum: “Signal-to-noise ratio in x-ray dark-field imaging using a grating interferometer” [J. Appl. Phys. 110, 053105 (2011)]

2011 ◽  
Vol 110 (10) ◽  
pp. 109902 ◽  
Author(s):  
Michael Chabior ◽  
Tilman Donath ◽  
Christian David ◽  
Manfred Schuster ◽  
Christian Schroer ◽  
...  
Keyword(s):  
Signal To Noise Ratio ◽  
Dark Field ◽  
Signal To Noise ◽  
X Ray ◽  
Dark Field Imaging ◽  
Grating Interferometer ◽  
Noise Ratio ◽  
Field Imaging

Dark-Field Imaging of Thin Specimens with a Forescatter Electron Detector at Low Accelerating Voltage

2013 ◽  
Vol 19 (6) ◽  
pp. 1688-1697 ◽  
Author(s):  
Nicolas Brodusch ◽  
Hendrix Demers ◽  
Raynald Gauvin
Keyword(s):  
Monte Carlo ◽  
Electron Microscope ◽  
Monte Carlo Simulations ◽  
Signal To Noise Ratio ◽  
Scanning Transmission Electron Microscope ◽  
Dark Field ◽  
Electrode Coating ◽  
Electron Detector ◽  
Dark Field Imaging ◽  
Field Imaging

AbstractA forescatter electron detector (FSED) was used to acquire dark-field micrographs (DF-FSED) on thin specimens with a scanning electron microscope. The collection angles were adjusted with the detector distance from the beam axis, which is similar to the camera length of the scanning transmission electron microscope annular DF detectors. The DF-FSED imaging resolution was calculated with SMART-J on an aluminum alloy and carbon nanotubes (CNTs) decorated with platinum nanoparticles. The resolution was three to six times worse than with bright-field imaging. Measurements of nanometer-size objects showed a similar feature size in DF-FSED imaging despite a signal-to-noise ratio 12 times smaller. Monte Carlo simulations were used to predict the variation of the contrast of a CNT/Fe/Pt system as a function of the collection angles. It was constant for very high collection angles (>450 mrad) and confirmed experimentally. The reverse contrast between carbon black particles and the smallest titanium dioxide (TiO2) nanoparticles was predicted by Monte Carlo simulations and observed in the DF-FSED micrograph of a battery electrode coating. However, segmentation of the micrograph was not able to isolate the TiO2 nanoparticle phase because of the close contrast of small TiO2 nanoparticles compared to the C black particles.

scholarly journals Next generation X-ray detectors for in-house XRD

2008 ◽  
Vol 23 (2) ◽  
pp. 101-105 ◽  
Author(s):  
Takeyoshi Taguchi ◽  
Christian Brönnimann ◽  
Eric F. Eikenberry
Keyword(s):  
Generation X ◽  
Dynamic Range ◽  
Single Photon ◽  
Signal To Noise Ratio ◽  
Photon Counting ◽  
Next Generation ◽  
Large Area ◽  
X Ray ◽  
Array Detectors ◽  
Good Signal

A novel type X-ray detector, called PILATUS, has been developed at the Paul Scherrer Institut in Switzerland during the last decade. PILATUS detectors are two-dimensional hybrid pixel array detectors, which operate in single-photon counting mode. PILATUS detectors feature a very wide dynamic range (1:1 000 000), very short readout time (<3.0 ms), no readout noise, and very high counting rate (>2×106counts/s/pixel). In addition, a lower energy threshold can be set in order to suppress fluorescence background from the sample, thus a very good signal-to-noise ratio is achieved. The combination of these features for area detectors is unique and thus the PILATUS detectors are considered to be the next generation X-ray detectors. The basic building block of all the detectors is the PILATUS module having an active area of 83.8×33.5 mm2. The PILATUS 100K is a complete detector system with one module. PILATUS detector systems can have other configurations, including large area systems consisting of 20 to 60 modules that can cover up to an area of 431×448 mm2. Such large systems are mainly used for macromolecular structure determination, such as protein crystallography and small angle X-ray scattering. The PILATUS 100K detector can be easily adapted to many systems; the single-module detector is integrated to an in-house X-ray diffraction (XRD) system. Examples of XRD measurements with the PILATUS 100K detector are given.

scholarly journals Signal-to-noise ratio in x ray dark-field imaging using a grating interferometer

2011 ◽  
Vol 110 (5) ◽  
pp. 053105 ◽  
Author(s):  
Michael Chabior ◽  
Tilman Donath ◽  
Christian David ◽  
Manfred Schuster ◽  
Christian Schroer ◽  
...  
Keyword(s):  
Signal To Noise Ratio ◽  
Dark Field ◽  
Signal To Noise ◽  
X Ray ◽  
Dark Field Imaging ◽  
Grating Interferometer ◽  
Noise Ratio ◽  
Field Imaging

Analytical TEM Study of Nanophase Precipitation in Nial Alloys

1997 ◽  
Vol 3 (S2) ◽  
pp. 1007-1008
Author(s):  
A. W. Wilson ◽  
J. M. Howe ◽  
A. Garg ◽  
R. D. Noebe
Keyword(s):  
Dark Field ◽  
Directionally Solidified ◽  
Solid Solution Strengthening ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Heat Treated ◽  
The Matrix ◽  
Solution Strengthening ◽  
20 Nm ◽  
Field Imaging

Alloying additions have been found to enhance the mechanical properties of NiAl through solid solution strengthening and the precipitation of 2°d phases. The precipitation of fine, homogeneously nucleated ß' (Ni2Al (Ti,Hf)) has been observed and characterized by dark-field imaging and electron diffraction. The exact composition of these and other precipitates, however, remains unknown. In this study, the composition of the fine ( <20 nm) ß’ precipitates in NiAl alloys is measured and compared to that of well-developed ß’ plates in the matrix.Two directionally solidified NiAl single-crystal alloys, NiAl-3Ti-0.5Hf and NiAl-7Ti (at.%) were grown by a Bridgeman technique using high purity alumina crucibles. Both ingots were homogenized for 32 h at 1644 K. In addition, the NiAl-3Ti-0.5Hf sample was aged at 1255 K for 6 h and furnace cooled. Samples for transmission electron microscopy were prepared from 3 mm diameter cylinders electro-discharge machined from the heat-treated ingots.

A Preparation of High Resolution Standards for Electron Microscopy. Part II

1971 ◽  
Vol 29 ◽  
pp. 160-161
Author(s):  
Akira Tanaka ◽  
David F. Harling
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Carbon Black ◽  
Single Crystal ◽  
Dark Field ◽  
Graphitized Carbon Black ◽  
Graphitized Carbon ◽  
Dark Field Imaging ◽  
Crystal Films ◽  
Micro Holes

In the previous paper, the author reported on a technique for preparing vapor-deposited single crystal films as high resolution standards for electron microscopy. The present paper is intended to describe the preparation of several high resolution standards for dark field microscopy and also to mention some results obtained from these studies. Three preparations were used initially: 1.) Graphitized carbon black, 2.) Epitaxially grown particles of different metals prepared by vapor deposition, and 3.) Particles grown epitaxially on the edge of micro-holes formed in a gold single crystal film.The authors successfully obtained dark field micrographs demonstrating the 3.4Å lattice spacing of graphitized carbon black and the Au single crystal (111) lattice of 2.35Å. The latter spacing is especially suitable for dark field imaging because of its preparation, as in 3.), above. After the deposited film of Au (001) orientation is prepared at 400°C the substrate temperature is raised, resulting in the formation of many square micro-holes caused by partial evaporation of the Au film.

Resolution in the Scanning Transmission Electron Microscope

1972 ◽  
Vol 30 ◽  
pp. 454-455
Author(s):  
M. G. R. Thomson
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Spherical Aberration ◽  
Signal To Noise Ratio ◽  
Scanning Transmission Electron Microscope ◽  
Dark Field ◽  
Objective Lens ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission

The variation of contrast and signal to noise ratio with change in detector solid angle in the high resolution scanning transmission electron microscope was discussed in an earlier paper. In that paper the conclusions were that the most favourable conditions for the imaging of isolated single heavy atoms were, using the notation in figure 1, either bright field phase contrast with β0⋍0.5 α0, or dark field with an annular detector subtending an angle between ao and effectively π/2.The microscope is represented simply by the model illustrated in figure 1, and the objective lens is characterised by its coefficient of spherical aberration Cs. All the results for the Scanning Transmission Electron Microscope (STEM) may with care be applied to the Conventional Electron Microscope (CEM). The object atom is represented as detailed in reference 2, except that ϕ(θ) is taken to be the constant ϕ(0) to simplify the integration. This is reasonable for θ ≤ 0.1 θ0, where 60 is the screening angle.

Analysis of 2D and 3D defects associated with precipitation of Cu in silicon

1991 ◽  
Vol 49 ◽  
pp. 870-871
Author(s):  
P.M. Rice ◽  
MJ. Kim ◽  
R.W. Carpenter
Keyword(s):  
Colony Growth ◽  
Dark Field ◽  
Dark Side ◽  
Silicide Phase ◽  
Strain Fields ◽  
Near Surface ◽  
Unknown Composition ◽  
Secondary Precipitates ◽  
20 Nm ◽  
2D And 3D

Extrinsic gettering of Cu on near-surface dislocations in Si has been the topic of recent investigation. It was shown that the Cu precipitated hetergeneously on dislocations as Cu silicide along with voids, and also with a secondary planar precipitate of unknown composition. Here we report the results of investigations of the sense of the strain fields about the large (~100 nm) silicide precipitates, and further analysis of the small (~10-20 nm) planar precipitates.Numerous dark field images were analyzed in accordance with Ashby and Brown's criteria for determining the sense of the strain fields about precipitates. While the situation is complicated by the presence of dislocations and secondary precipitates, micrographs like those shown in Fig. 1(a) and 1(b) tend to show anomalously wide strain fields with the dark side on the side of negative g, indicating the strain fields about the silicide precipitates are vacancy in nature. This is in conflict with information reported on the η'' phase (the Cu silicide phase presumed to precipitate within the bulk) whose interstitial strain field is considered responsible for the interstitial Si atoms which cause the bounding dislocation to expand during star colony growth.

Detection of a point defect in a silicon single crystal by high-resolution TEM

1995 ◽  
Vol 53 ◽  
pp. 466-467
Author(s):  
M. Awaji
Keyword(s):  
High Resolution ◽  
Single Crystal ◽  
Point Defect ◽  
Point Defects ◽  
Noise Level ◽  
Dark Field ◽  
Silicon Single Crystal ◽  
High Resolution Image ◽  
Dark Field Imaging ◽  
Field Imaging

It is necessary to improve the resolution, brightness and signal-to-noise ratio(s/n) for the detection and identification of point defects in crystals. In order to observe point defects, multi-beam dark-field imaging is one of the useful methods. Though this method can improve resolution and brightness compared with dark-field imaging by diffuse scattering, the problem of s/n still exists. In order to improve the exposure time due to the low intensity of the dark-field image and the low resolution, we discuss in this paper the bright-field high-resolution image and the corresponding subtracted image with reference to a changing noise level, and examine the possibility for in-situ observation, identification and detection of the movement of a point defect produced in the early stage of damage process by high energy electron bombardment.The high-resolution image contrast of a silicon single crystal in the [10] orientation containing a triple divacancy cluster is calculated using the Cowley-Moodie dynamical theory and for a changing gaussian noise level. This divacancy model was deduced from experimental results obtained by electron spin resonance. The calculation condition was for the lMeV Berkeley ARM operated at 800KeV.

Growth of hematite on (0001) and {1102} sapphire substrates

1990 ◽  
Vol 48 (4) ◽  
pp. 376-377
Author(s):  
Lisa A. Tietz ◽  
Scott R. Summerfelt ◽  
C. Barry Carter
Keyword(s):  
Imaging Techniques ◽  
Chemical Vapor ◽  
Interface Energy ◽  
Dark Field ◽  
Cation Sublattice ◽  
Sapphire Substrates ◽  
Dark Field Imaging ◽  
Weak Beam ◽  
Pressure Chemical ◽  
Interface Structures

Defects in thin films are often introduced at the substrate-film interface during the early stages of growth. The interface structures of semiconductor heterojunctions have been extensively studied because of the electrical activity of defects in these materials. Much less attention has been paid to the structure of oxide-oxide heterojunctions. In this study, the structures of the interfaces formed between hematite (α-Fe2O3) and two orientations of sapphire (α-Al2O3) are examined in relationship to the defects introduced into the hematite film. In such heterojunctions, the oxygen sublattice is expected to have a strong influence on the epitaxy; however, defects which involve only the cation sublattice may be introduced at the interface with little increase in interface energy.Oxide heterojunctions were produced by depositing small quantities of hematite directly onto electrontransparent sapphire substrates using low-pressure chemical vapor deposition. Prior to deposition, the ionthinned substrates were chemically cleaned and annealed at 1400°C to give “clean”, crystalline surfaces. Hematite was formed by the reaction of FeCl3 vapor with water vapor at 1150°C and 1-2 Torr. The growth of the hematite and the interface structures formed on (0001) and {102} substrates have been studied by bright-field, strong- and weak-beam dark-field imaging techniques.

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